QCCJ EEPROM 1,527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28HC64J-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel				QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	120 ns	5
X28HC64JI-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	85 Cel		8KX8	8K	-40 Cel				QUAD	R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	90 ns	5
X28HC64JZ-12T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	120 ns	5	YES
X28HC64J-70	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		8KX8	8K	0 Cel				QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		5 ms	65536 bit	4.5 V							13.97 mm	70 ns	5
KM28C17J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C256AJI-15	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C16J-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C256AJ-09	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	90 ns	5	YES
KM28C65AJI-20	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C256J-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C65AJ-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C16JI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C65J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C256J-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C64J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel				QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS						13.97 mm	250 ns	5
KM28C256JI-20	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C64BJ-12	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	120 ns	5	YES
KM28C16J-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C64AJ-12	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	120 ns	5	YES
KM28C256AJI-20	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C64AJI-12	Samsung	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL			8192 words	2.5			8	CHIP CARRIER				1.27 mm			8KX8	8K					QUAD	R-PQCC-J32			3.5 mm		11.43 mm	Not Qualified		65536 bit								13.97 mm		3
KM28C64AJI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C64BJI-12	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	120 ns	5	YES
KM28C17JI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C16J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C256AJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C64BJI-15	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C65BJ-12	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	120 ns	5	YES
KM28C65JI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C64BJI-09	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	90 ns	5	YES
KM28C65AJI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C256JI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C17JI-15	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C65AJ-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C64AJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C65BJI-09	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	90 ns	5	YES
KM28C64JI-25	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO			QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32				.0001 Amp	13.97 mm	250 ns	5	YES
KM28C17J-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C64BJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C64J-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel				QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS						13.97 mm	200 ns	5
KM28C65AJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C64AJ-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C65J-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C65BJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C17J-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD	YES	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	150 ns	5	YES
KM28C256J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm	250 ns	5	YES
KM28C256AJ-20	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	5 ms	262144 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0			.0001 Amp	13.97 mm	200 ns	5	YES
KM28C16JI-20	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified		16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm	200 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.