STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M93S46-RBN3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5			16	IN-LINE					2.54 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3				9.27 mm
M93S46-RDW3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3				4.4 mm
M28256-90WKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3			.00002 Amp	13.995 mm	90 ns	3	YES
M28010-10BA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e3			.00005 Amp	41.91 mm	100 ns	5	YES
M35B32-WMN3P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words				3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
ST93C47CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words				3.3/5	8	SMALL OUTLINE	SOP8,.25	16	EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0			.00005 Amp	4.9 mm	500 ns
M34C02-WMN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4			.0000005 Amp	4.9 mm
ST93C56CM6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			16	SMALL OUTLINE		8		40	1.27 mm	85 Cel		128X16	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16						4.9 mm
M28C64-25WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	36.02 mm	250 ns	3	YES
M27C1024-15C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		100 ns	2.7
SR176-A5T/XXX	STMicroelectronics	EEPROM																																																								3
ST93C67B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3.3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	CONFIGURABLE AS 256 X 16		e0			.00005 Amp	9.55 mm
ST24E64M3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V							5.3 mm
M28C64-12WKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	120 ns	3	YES
M34C02-LDS1P	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3				3 mm
M27C1024-35XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		35 ns	2.7
M34A02-VMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3		3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1011DDDR		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V			e4			.000001 Amp	4.9 mm
M28C64C-200P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	37.085 mm	200 ns	5	YES
M93S56-WDW3TG/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.000005 Amp
ST25W16ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words				3/5	8	SMALL OUTLINE	SOP14,.25		EEPROMs	10	1.27 mm	85 Cel		2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				e0			.000005 Amp
M34S32-WMN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words					8	SMALL OUTLINE				40	1.27 mm	70 Cel		4KX8	4K	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS						4.9 mm
M34E04-FMC8P	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	95 Cel		512X8	512	0 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M93S66-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e4	30	260	.000005 Amp	4.9 mm
ST25C02CM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE				10	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M34C02-FDS1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e3			.0000005 Amp	3 mm
M34C02-LDS1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3				3 mm
M34C02-RMB1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.2			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M93S66-DW3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.00005 Amp	4.4 mm
ST25E16DM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	16384 bit	2 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M28C4-A20WMS1T	STMicroelectronics
M2201M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	MMMMMMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V	2 WIRE SERIAL INTERFACE; 100K ERASE/WRITE CYCLE; DATA RETENTION 100 YEARS; HARDWARE WRITE		e0				4.9 mm
M28C17A-15NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	NO	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e0			.00005 Amp	11.8 mm	150 ns	5	YES
ST25W08B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0			.000005 Amp	9.55 mm
TS93C46VP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		4 mA	64 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel		64X16	64	-40 Cel		Tin/Lead (Sn/Pb)			DUAL	SOFTWARE	R-PDIP-T8				10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0			.0001 Amp
M93S46-WDW1	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		3.3		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel		64X16	64	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.5 V			e0			.00001 Amp	4.4 mm
M28C16-90N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.25 mm			8 mm	Not Qualified			16384 bit	4.5 V		64	e0			.0001 Amp	11.8 mm	90 ns	5	YES
M34S32-MN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5			8	SMALL OUTLINE				40	1.27 mm	70 Cel		4KX8	4K	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS						4.9 mm
M34C02-FMM1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25C02B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0			.000005 Amp	9.55 mm
ST25W08M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	1KX8	1K	0 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V			e4			.000005 Amp	4.9 mm
ST93C47B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words					8	IN-LINE					2.54 mm	125 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	3 V	CAN BE ORGANIZED AS 64 X 16						9.55 mm
M28C17-150MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		16384 bit	4.5 V							17.9 mm	150 ns	5
ST93C46CM1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE				10	1.27 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						4.9 mm
M34C02-LDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e4			.0000005 Amp	4.4 mm
M28LV64X-300N1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		300 ns		YES
M35080-MN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel		1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V							4.9 mm
M28C64-12MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.0001 Amp	17.9 mm	120 ns	5	YES
ST25DV04KC-JF8T3	STMicroelectronics	EEPROM																																																								12

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.