STMicroelectronics EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M34C02-WDW1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				4.4 mm
M28010-25RBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		2.4 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e3			.00003 Amp	41.91 mm	250 ns	3	YES
ST93C06CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel		16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	9.55 mm
M93S56-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		2.5		2/3.3	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X16	128	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e4			.000005 Amp	4.9 mm
ST25E32M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel	OPEN-DRAIN	4KX8	4K	0 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V							5.3 mm
M28010-15KA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3			.00005 Amp	13.995 mm	150 ns	5	YES
M93S46-WDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3			.00001 Amp	3 mm
M93S56-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e4			.000002 Amp	4.4 mm
M93S66-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		2.5		2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X16	256	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e0			.000005 Amp	4.4 mm
M93S66-WBN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e3			.000005 Amp	9.27 mm
SRIX4K-A3T/S-ISOR/XXX	STMicroelectronics
M28C4-A15WNS3	STMicroelectronics
ST25W01CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
M28256-20WMS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			262144 bit	2.7 V							17.9 mm	200 ns	3
ST93C56B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	125 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	9.55 mm
M93S56-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e4			.000002 Amp	4.9 mm
ST24C08M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	3 V			e4				4.9 mm
M28LV64-250K6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	13.995 mm	250 ns	3	YES
M28C4-A90MS3T	STMicroelectronics
ST95N08M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	1024 words				3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel		1KX8	1K	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0			.00001 Amp
M27C256B-60C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6		OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		60 ns	2.7
M34D32WMN5T	STMicroelectronics	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	4096 words				3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit				e4			.000002 Amp			2.7
M28256-20BS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V							36.02 mm	200 ns	5
M34E02-FMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		EEPROMs	40	.5 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0			.0000005 Amp	3 mm
ST25DV16KC-IE6D3	STMicroelectronics	EEPROM																																																								12
ST93C66M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel		512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V	CAN BE ORGANIZED AS 256 X 16						4.9 mm
ST24W02CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
M28LV17-250K6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	CHIP CARRIER					1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V							13.995 mm	250 ns	3
M28C4-A90WNS1T	STMicroelectronics
M28256-25WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
M34C02-WDS1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				3 mm
M34C02-LMM6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M93S56-MN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0			.00005 Amp	4.9 mm
M34C02-LDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3			.0000005 Amp	3 mm
M28C16-120N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	1.25 mm			8 mm	Not Qualified			16384 bit	4.5 V							11.8 mm	120 ns	5
M28C64C-250MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	17.9 mm	250 ns	5	YES
ST24W16M3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e0			.0001 Amp	4.9 mm
M28C4-A15WMS6	STMicroelectronics
M28C4-A15NS6	STMicroelectronics
M34E04-FMC8TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	95 Cel		512X8	512	0 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M34D64MN5	STMicroelectronics	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	8192 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-20 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e4			.00001 Amp			2.7
ST93CS57M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3.3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	3-STATE	128X16	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0			.00005 Amp	4.9 mm
ST93C06CM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	10	1.27 mm	70 Cel		16X16	16	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	4.9 mm
ST24LC21M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words				3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE I2C INTERFACE		e0			.000005 Amp	4.9 mm
ST93C47TB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words				3.3/5	8	IN-LINE	DIP8,.3	16	EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0			.00005 Amp	9.55 mm	500 ns
M93S66-WMN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e4			.000005 Amp	4.9 mm
ST1336-D15/XXYY	STMicroelectronics	EEPROM		5		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words		5			8	MICROELECTRONIC ASSEMBLY								34X8	34			GOLD			UNSPECIFIED		X-XXMA-X5							Not Qualified	5 ms	I2C	272 bit				e4
ST24FC21BM1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		128X8	128	0 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			e4			.00003 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.