STMicroelectronics EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M93S56-RDS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e0			.000001 Amp	3 mm
M93S56-WMN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			16	SMALL OUTLINE					1.27 mm	125 Cel		128X16	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V							4.9 mm
M28LV64-250N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
M28010-20WNA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel					DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						18.4 mm	200 ns	3
M14C04-WS21	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words		3.3			1	UNCASED CHIP						70 Cel		4KX1	4K	0 Cel					UPPER		X-XUUC-N		5.5 V			.4 MHz		Not Qualified	10 ms	I2C	4096 bit	2.5 V
M28LV17-250P6	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	36.02 mm	250 ns	3	YES
M28C17A-20KA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e3			.00005 Amp	13.995 mm	200 ns	5	YES
ST93C46AB6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE				40	2.54 mm	85 Cel	3-STATE	128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEAR DATA RETENTION; USER CONFIGURABLE 64 X 16						9.55 mm
M28C64-12WMS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	17.9 mm	120 ns	3	YES
ST93C47TM6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE		16			1.27 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V							4.9 mm	500 ns
M28LV64-300XMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	300 ns	3	YES
M34C02-RMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words		2.2		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
ST93C46TM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	70 Cel	3-STATE	128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	4.9 mm
ST25W16B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e0			.000005 Amp	9.55 mm
M93S66-RDW3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		256KX16	256K	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4194304 bit	1.8 V			e3				4.4 mm
ST1355DW4/IRAD	STMicroelectronics
M28LV16-300K6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	13.995 mm	300 ns	3	YES
M93S46-WDS3G/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words				3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e3			.000005 Amp
M34C02-RMM6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28C64-90NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	11.8 mm	90 ns	5	YES
M93S46-WMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	64 words				3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e4			.00001 Amp
M28LV17-300K1	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	13.995 mm	300 ns	3	YES
M34C02-WMN1P	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel		256X8	256	0 Cel		TIN			DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				4.9 mm
M28C64-15MS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.0001 Amp	17.9 mm	150 ns	5	YES
M28010-12WBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3			.00003 Amp	41.91 mm	120 ns	3	YES
M28C64-120XMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28							Not Qualified			65536 bit			64	e0			.0001 Amp		120 ns		YES
M34C02-FDW1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e4			.0000005 Amp	4.4 mm
ST25DV16KC-JF8S3	STMicroelectronics	EEPROM																																																								12
M93S66-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	256 words				3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit				e0			.00001 Amp
M28C4-A90NS3T	STMicroelectronics
M93S56-RMN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		2.5		2/3.3	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	3-STATE	128X16	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e4			.000005 Amp	4.9 mm
ST24C04RM3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	512 words				2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	125 Cel		512X8	512	-40 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				e0			.00001 Amp
M34D64-MN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e4			.00001 Amp	4.9 mm
ST25C08CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M93S46-DS3TP/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e3			.00001 Amp
M27C1024-70N3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		70 ns	2.7
M28C17B-90K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified	3 ms		16384 bit	4.5 V		64	e0			.0001 Amp	13.995 mm	90 ns	5	YES
M93S46-WBN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	64X16	64	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.5 V			e0			.00001 Amp	9.55 mm
ST1335-W2/XXYY	STMicroelectronics	EEPROM		5	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words		5			8	UNCASED CHIP								34X8	34						UPPER		X-XUUC-N5							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
M28010-20WKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3			8	CHIP CARRIER				10	1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						13.995 mm	200 ns	3
ST95021M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V			e0			.00005 Amp	4.9 mm
M93S46-RMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e0			.000001 Amp	4.9 mm
M93S46-DW3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e4			.00001 Amp	4.4 mm
ST24C01M6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0				4.9 mm
M35B32-WMC6G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words				3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		EEPROMs	40	.65 mm	125 Cel		4KX8	4K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
ST24W08M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4				4.9 mm
M28C64-120P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28							Not Qualified			65536 bit			64	e0			.0001 Amp		120 ns		YES
M28LV64X-200P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		200 ns		YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.