STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M27C256B-25N3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G28							Not Qualified			262144 bit				e0	.0001 Amp		250 ns	2.7
M93S56-MN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e0	.000015 Amp
LRIS2K-A6STU/2GE	STMicroelectronics
ST14C02C-D20	STMicroelectronics	EEPROM	COMMERCIAL	8		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3.3/5	8	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	10		70 Cel		256X8	256	0 Cel			1010000R		UPPER			X-XUUC-N	1	5.5 V		1000000 Write/Erase Cycles	.1 MHz		Not Qualified	10 ms	I2C	2048 bit	3 V				.0001 Amp
M93S56-RMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e0	.000001 Amp	4.9 mm
ST95010M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	3-STATE	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	4.5 V			e4	.00005 Amp	4.9 mm
ST24E16M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e0	.0001 Amp	4.9 mm
M14C32-S44	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		32768 words		3.3			1	UNCASED CHIP						70 Cel		32KX1	32K	0 Cel					UPPER			X-XUUC-N		5.5 V			.4 MHz		Not Qualified	10 ms	I2C	32768 bit	2.5 V
ST1336-D10/XXYY	STMicroelectronics	EEPROM		5		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words		5			8	MICROELECTRONIC ASSEMBLY								34X8	34			GOLD			UNSPECIFIED			X-XXMA-X5							Not Qualified	5 ms	I2C	272 bit				e4
ST24W04M5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-20 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4		4.9 mm
M28C64-20WMS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL			R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	17.9 mm	200 ns	3	YES
M28C64-20WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	200 ns	3	YES
M27C1024-45XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN			QUAD			S-PQCC-J44										1048576 bit				e3	.0001 Amp		45 ns	2.7
M34C02-FMN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE					1.27 mm	85 Cel		256X8	256	-40 Cel		TIN			DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e3		4.9 mm
M28256-25BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3	.0001 Amp	36.02 mm	250 ns	5	YES
M93S66-DW1	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel		256X16	256	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V			e0	.00005 Amp	4.4 mm
M93S56-RBN3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words		5			16	IN-LINE					2.54 mm	125 Cel		128KX16	128K	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V			e3		9.27 mm
M93S46-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e4	.000015 Amp	4.9 mm
M35B32-WMC63TGK	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		4 mA	4096 words				3/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		4KX8	4K	-40 Cel					DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit					.000005 Amp
M28C64-120XMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL			R-PDSO-G28							Not Qualified			65536 bit			64	e0	.0001 Amp		120 ns		YES
ST95N04CPS6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5			8	IN-LINE				10	2.54 mm	85 Cel	3-STATE	512X8	512	-40 Cel					DUAL			R-PDIP-T8		5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M28C64X-150MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	17.9 mm	150 ns	5	YES
M93S46-RDW3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		64KX16	64K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V					4.4 mm
M8571B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL		20 mA	32 words		5		5	32	IN-LINE	DIP8,.35	16	EEPROMs	10	2.54 mm	70 Cel		32X32	32	0 Cel		Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T8				10000 Write/Erase Cycles			Not Qualified		3-WIRE	1024 bit				e0	.02 Amp
ST25C08M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	1KX8	1K	0 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V			e4	.000005 Amp	4.9 mm
LRIS2KMBTG2ST	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS		64 words					32	FLATPACK					.5 mm	85 Cel		64X32	64	-20 Cel					DUAL			R-XDFP-F8		3 V	.6 mm		13.567 MHz	2 mm	Not Qualified	5.8 ms		2048 bit	1.5 V					3 mm		3
M28256-15NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	150 ns	5	YES
ST24E64DM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	65536 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				5.3 mm
M93S56-MN3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0	.00005 Amp	4.9 mm
M28010-12BA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5			8	IN-LINE					2.54 mm	70 Cel		128KX8	128K	0 Cel					DUAL			R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V					41.91 mm	120 ns	5
ST95010WB6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE					2.54 mm	85 Cel	3-STATE	128X8	128	-40 Cel					DUAL			R-PDIP-T8		5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V					9.55 mm
ST93C56M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			16	SMALL OUTLINE		8		10	1.27 mm	125 Cel	3-STATE	128X16	128	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				4.9 mm
M28C4-A30WBS6	STMicroelectronics
M2201VM1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		3.3			8	SMALL OUTLINE				100	1.27 mm	70 Cel		128X8	128	0 Cel					DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.7 V	2 WIRE SERIAL INTERFACE; 100K ERASE/WRITE CYCLE; DATA RETENTION 100 YEARS; HARDWARE WRITE				4.9 mm
M34C02-FBN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		2.5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		3.6 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0		9.27 mm
M34202-FMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	2	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		2.5		1.8/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		2KX1	2K	-40 Cel			1010000R/1010XXXR		DUAL	2	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				.000001 Amp	3 mm
M27C1024-10C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD			S-PQCC-J44										1048576 bit				e3	.0001 Amp		100 ns	2.7
M28C16B-120WK1TR	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	MATTE TIN			QUAD			R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V		64	e3	.00002 Amp	13.995 mm	120 ns	3	YES
M14C32-WD20	STMicroelectronics	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	32768 words		3.3		3/5	1	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	40		70 Cel		32KX1	32K	0 Cel			1010000R		UPPER		HARDWARE	R-XUUC-N	1	5.5 V		1000000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	32768 bit	2.5 V				.000002 Amp
M27C1024-35XN1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		TIN LEAD			DUAL			R-PDSO-G40										1048576 bit				e0	.0001 Amp		35 ns	2.7
ST24C04ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP14,.25		EEPROMs	10	1.27 mm	125 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL		SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	I2C INTERFACE; 1000000 ERASE/WRITE CYCLES.; DATA RETENTION > 10 YEARS		e0		8.65 mm
M28C17-120N1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL			R-PDSO-G28							Not Qualified			16384 bit			64	e0	.0001 Amp		120 ns		YES
M28256-25WNS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL			R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			262144 bit	2.7 V					11.8 mm	250 ns	3
M93S46-RDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		2.5		2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		64X16	64	-20 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e0	.000005 Amp	4.4 mm
M28010-10NA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0	.00005 Amp	18.4 mm	100 ns	5	YES
M28C4-A90NS1T	STMicroelectronics
M93S46-MN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e4	.000015 Amp	4.9 mm
M28C64C-200K6TR	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5			8	CHIP CARRIER				40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel					QUAD			R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS				13.995 mm	200 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.