STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C64-15WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	150 ns	3	YES
M28C64-90MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	17.9 mm	90 ns	5	YES
M28C4-A30WNS1	STMicroelectronics
M28256-25WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
ST25DV64KC-JF8T3	STMicroelectronics	EEPROM																																																							12
M28010-20WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0			.00003 Amp	18.4 mm	200 ns	3	YES
M28256-15WKA3	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	2.7 V							13.995 mm	150 ns	3
M28010-12WNA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0			.00003 Amp	18.4 mm	120 ns	3	YES
M34216-BFMC6G	STMicroelectronics	EEPROM																																												I2C
ST25C16B	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words					8	IN-LINE			10	2.54 mm	70 Cel		2KX8	2K	0 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm			7.62 mm	Not Qualified			16384 bit	2.5 V	OVER 10 YEARS DATA RETENTION						9.55 mm		3
M28C4-A12NS3	STMicroelectronics
SRI512-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		3			16	UNCASED CHIP					85 Cel		32X16	32	-20 Cel					UPPER		X-XUUC-N		3.5 V						5 ms		512 bit	2.5 V									3
M34C02-WMM1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M93S66-DW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.000015 Amp	4.4 mm
ST1331D-D10/XXYY	STMicroelectronics
M28010-12RNA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		2.4 V	1.2 mm			8 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0			.00003 Amp	18.4 mm	120 ns	3	YES
M34W02-BN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	256 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0			.0001 Amp
M28C4-A12NS1	STMicroelectronics
M27C256B-80C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		80 ns	2.7
M93S46-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	4.9 mm
M93S66-MN3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.00005 Amp	4.9 mm
M28010-12WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3			.00003 Amp	13.995 mm	120 ns	3	YES
ST95020B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V			e0			.00005 Amp	9.55 mm
M28C64-30WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	300 ns	3	YES
ST25DV16KC-IE8D3	STMicroelectronics	EEPROM																																																							12
ST95080M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	70 Cel		1KX8	1K	0 Cel		Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0			.00005 Amp
M34C02-FMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28C64-12KA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	13.995 mm	120 ns	5	YES
ST25E32M3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words		5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	40	1.27 mm	125 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V			e0			.000005 Amp	5.3 mm
M34C02-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	4.5 V			e0			.000001 Amp	9.55 mm
ST24C02M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	3 V			e4			.0001 Amp	4.9 mm
ST24C16CML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel		Tin/Lead (Sn/Pb)	1010MMMR		DUAL	SOFTWARE	R-PDSO-G14				100000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				e0			.0001 Amp
M28C64-12MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	17.9 mm	120 ns	5	YES
M28010-12NA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0			.00005 Amp	18.4 mm	120 ns	5	YES
ST24C01RM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words				2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel		128X8	128	0 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00001 Amp	4.9 mm
LRI2KMBTG2GE	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS		2048 words					1	FLATPACK				.5 mm	85 Cel		2KX1	2K	-20 Cel					DUAL		R-PDSO-N8		3 V	.6 mm			2 mm	Not Qualified			2048 bit	1.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M14C16-WS41	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16384 words		3.3			1	UNCASED CHIP					70 Cel		16KX1	16K	0 Cel					UPPER		X-XUUC-N		5.5 V			.4 MHz		Not Qualified	10 ms	I2C	16384 bit	2.5 V
ST25C04B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.000005 Amp	9.55 mm
ST24C04M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4			.0001 Amp	4.9 mm
ST24E16DB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE			10	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
M93S66-BN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			16	IN-LINE				2.54 mm	85 Cel		256X16	256	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V							9.27 mm
M34C02-LDW1T	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0			.0000005 Amp	4.4 mm
M93S46-WDW3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words				3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	125 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e4			.000005 Amp
M2201DW1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V							4.4 mm
ST24LC21BB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		4.5		3.6/5.5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0			.00003 Amp	9.55 mm
M28256-20WMS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3			.00002 Amp	17.9 mm	200 ns	3	YES
M27C256B-15XN3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G28										262144 bit				e0			.0001 Amp		150 ns	2.7
M93S46-WMN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words				3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0			.000005 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.