STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
ST24C04CM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE				10	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
ST24LW21B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		4.5		3.6/5.5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0			.00003 Amp	9.55 mm
M28C64-15NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	11.8 mm	150 ns	5	YES
M93S56-WMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	128 words				3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X16	128	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.00001 Amp
M28C64-90N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28							Not Qualified			65536 bit			64	e0			.0001 Amp		90 ns		YES
M93S56-DS3TG/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e3			.000015 Amp
M28LV64-250XK6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	13.995 mm	250 ns	3	YES
M34D64-BN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	8192 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e0			.00001 Amp	9.55 mm
M93S56-DW3G/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.000015 Amp
ST93C56CM3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e4			.00005 Amp	4.9 mm
ST24C01M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4				4.9 mm
M28C64-90XP1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28							Not Qualified			65536 bit			64	e0			.0001 Amp		90 ns		YES
M28256-20WKA3	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	CHIP CARRIER					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	2.7 V							13.995 mm	200 ns	3
M28LV64-250K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	13.995 mm	250 ns	3	YES
M28LV16-300N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	11.8 mm	300 ns	3	YES
M93S56-DW6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0			.000015 Amp	4.4 mm
ST93C57CM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		3.3		3.3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	70 Cel		128X16	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e4			.00005 Amp	4.9 mm
M34C02-LDW1	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0			.0000005 Amp	4.4 mm
M28C4-A90WNS3T	STMicroelectronics
M27C1024-10C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		100 ns	2.7
ST93C66CM3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			16	SMALL OUTLINE		8			1.27 mm	125 Cel		256X16	256	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V							4.9 mm
M93S46-DS3TG/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e3			.00001 Amp
M28256-25WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0			.00002 Amp	13.995 mm	250 ns	3	YES
ST14C02C-S24	STMicroelectronics	EEPROM	COMMERCIAL			UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	UNCASED CHIP						70 Cel		256X8	256	0 Cel					UPPER		X-XUUC-N		5.5 V			.1 MHz		Not Qualified	10 ms	I2C	2048 bit	3 V
M27C1024-45C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		45 ns	2.7
M27C1024-70XN7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		70 ns	2.7
ST24C01CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
M93S46-MN3TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		64 words		5			16	SMALL OUTLINE					1.27 mm	85 Cel		64X16	64	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V							4.9 mm
M27C1024-70N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		70 ns	2.7
M27C1024-80XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		80 ns	2.7
SR176-W4/XXX	STMicroelectronics	EEPROM																																																								3
ST25W16M6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e4			.000005 Amp	4.9 mm
M14C64-WD20	STMicroelectronics	EEPROM	COMMERCIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		65536 words		3.3			1	UNCASED CHIP						70 Cel		64KX1	64K	0 Cel					UPPER		R-XUUC-N		5.5 V			.4 MHz		Not Qualified	10 ms	I2C	65536 bit	2.5 V
M28010-10NA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0			.00005 Amp	18.4 mm	100 ns	5	YES
ST24C08CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M28010-10RKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		2			8	CHIP CARRIER				10	1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD		R-PQCC-J32		2.4 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						13.995 mm	100 ns	3
M34C02-LBN1P	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		2.5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3				9.27 mm
M34C02-FBN1T	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		2.5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD			DUAL		R-PDIP-T8		3.6 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0				9.27 mm
ST95N04CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	3-STATE	512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		1 MHz	5.25 mm	Not Qualified	5 ms	SPI	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M27C1024-20XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		100 ns	2.7
M27C1024-20XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		100 ns	2.7
M28LV16-300N1T	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V							11.8 mm	300 ns	3
M28010-12RKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			QUAD		R-PQCC-J32		2.4 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3			.00003 Amp	13.995 mm	120 ns	3	YES
M93S66-DW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.000015 Amp	4.4 mm
M34C02-FMM1P	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28C4-A25WNS3T	STMicroelectronics
M34W02-MN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0			.0001 Amp
M27C256B-12N3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G28							Not Qualified			262144 bit				e0			.0001 Amp		120 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.