24 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MX25L6435EXCI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3.3	3/3.3	4	GRID ARRAY, THIN PROFILE		2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	IT ALSO CONFIGURED AS 64M X 1		40	260	NOR TYPE		8 mm		2.7
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		1.8
MX25U51245GXDI54	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm			SPI		536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1				NOR TYPE	.00018 Amp	8 mm		1.8
S25FL128SAGBHI213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FL128SAGBHIA03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1	30	260	NOR TYPE	.0001 Amp	8 mm		3
S25FL128SAGBHIZ00	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		500 ms	SPI		134217728 bit	2.7 V					NOR TYPE	.0001 Amp	8 mm		3
S25FL129P0XBHI210	Cypress Semiconductor	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.3 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm		3
S25FL512SDSBHI213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1	e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FS256SAGBHI203	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25FS256SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
AT45DB321D-CU	Atmel	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B24		3.6 V	1.4 mm		66 MHz	6 mm	Not Qualified				33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH	e3					8 mm		2.7
IS25WP512M-RHLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.95 V	1.2 mm	100000 Write/Erase Cycles	112 MHz	6 mm			SPI		536870912 bit	1.7 V			30	260	NOR TYPE	.00026 Amp	8 mm		1.8
IS25WX256-JHLA3	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	70 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			100	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		9
MT35XU02GCBA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					2147483648 bit	1.7 V		e1	30	260			8 mm		1.8
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MX25L51245GXDJ-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		128MX4	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH		NOT SPECIFIED	NOT SPECIFIED			8 mm		3
N25Q512A11G1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		108 MHz	6 mm					536870912 bit	1.7 V		e1			NOR TYPE		8 mm		1.8
S25FL128SAGBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FL128SAGBHV203	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm		3
S25FL256SAGBHID10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FL512SDSBHBC13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1	e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHIC13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHMC13	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1	e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHV213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHVC13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	8 mm		3
S25FS128SAGBHI200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25FS512SAGBHI213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V		e1			NOR TYPE	.0001 Amp	8 mm		1.8
S26KL256SDABHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm					268435456 bit	2.7 V							8 mm	96 ns	3
S28HS02GTFPBHV053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel		BOTTOM		S-PBGA-B24	3	2 V			166 MHz						2147483648 bit	1.7 V					NOR TYPE				1.8
S70FS01GSDSBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1	e1					8 mm		1.8
S70FS01GSDSBHV213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH						8 mm		1.8
MX25U12835FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		104 MHz	6 mm					134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
S25FL128LAGBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S26KS128SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY						85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V									134217728 bit	1.7 V								96 ns	1.8
S26KS512SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY						105 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V									536870912 bit	1.7 V								96 ns	1.8
S70FS01GSDSBHB210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1						8 mm		1.8
S70FS01GSDSBHB213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1						8 mm		1.8
S70FS01GSDSBHM213	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1						8 mm		1.8
W25N01GVTCIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	1073741824 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25Q01JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
W25Q32FVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V					NOR TYPE	.00002 Amp	8 mm		2.7
W25Q64JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		3.3
MT35XU512ABA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V		e1	30	260			8 mm		1.8
S28HS512TGABHI010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	173 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.000113 Amp	8 mm		1.8
MT35XU01GBBA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		1073741824 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		1GX1	1G	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V		e1	30	260			8 mm		1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.