24 Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
MT25QL01GBBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	55 mA	134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm
S25FL256SAGBHIA00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm		3
S25FL128LAGBHV030	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
MX25L25645GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	120 MHz	6 mm			SPI		268435456 bit	2.7 V		e1			NOR TYPE	.00002 Amp	8 mm		3
MX25L51245GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX4	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm					536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH		NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MT25QU01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		128057344 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1024458752 bit	1.7 V			30	260			8 mm		1.8
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					536870912 bit	1.65 V							8 mm		1.8
MX66L2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3		8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.3 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm		3
S25FL256SAGBHIC00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm		3
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm		3
MT25QL02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	85 mA	268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	BOTTOM/TOP	2147483648 bit	2.7 V					NOR TYPE	.0005 Amp	8 mm		3
S26KS256SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		33554432 words	1.8		8	GRID ARRAY						85 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V									268435456 bit	1.7 V								96 ns	1.8
S28HS02GTFPBHV050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel		BOTTOM		S-PBGA-B24	3	2 V			166 MHz						2147483648 bit	1.7 V					NOR TYPE				1.8
S26KL512SDABHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY						85 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V									536870912 bit	2.7 V								96 ns	3
MT25QL512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
W25Q32JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ	e1		260			8 mm		3
W25Q32JVTCIM	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3		8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX8	4M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
IS25WP064A-RHLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	29 mA	8388608 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		67108864 bit	1.65 V		e1	10	260	NOR TYPE	.000035 Amp	5 mm		1.8
S25FL256LAGBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL256SAGBHV200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25HL01GTDPBHV033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm			SPI		1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	8 mm		3
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ	e1		260			8 mm		3
MT29F2G01ABAGD12-AAT:G	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			10	1 mm	105 Cel		256MX8	256M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V					SLC NAND TYPE	.00005 Amp	8 mm		3.3
W25N01GVTBIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	1073741824 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
MT25QL01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		1073741824 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3.3
MT35XU512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V		e1	30	260			8 mm		1.8
MT25QU256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MT29F8G01ADBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	1073741824 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	1GX8	1G	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		8589934592 bit	1.7 V	CONFIGURABLE AS 8G X 1				SLC NAND TYPE	.00005 Amp	8 mm		1.8
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT	e1					8 mm		2.7
MX66U2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.3 mm		133 MHz	8 mm					2147483648 bit	1.65 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1						6 mm		1.8
S70FS01GSDSBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X1						8 mm		1.8
W25N01GVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	1073741824 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
MT25QL128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V		e1	30	260	NOR TYPE	.00005 Amp	8 mm		3
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm		1.8
MT25QU256ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V			30	260			8 mm		1.8
MT29F4G01ABBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	536870912 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		4294967296 bit	1.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.00005 Amp	8 mm		1.8
MT35XU02GCBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		2GX1	2G	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V		e1	30	260			8 mm		1.8
MX25U25645GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	GRID ARRAY, THIN PROFILE		4			1 mm	85 Cel		32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1	e1					8 mm		1.8
S25FL129P0XBHI300	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI		134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm		3
S70FS01GSDSBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH	e1					8 mm		1.8
MT25QL256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
S25FL128SAGBHIA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
ATXP032-CCUE-T	Dialog Semiconductor	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	37 mA	4194304 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	MATTE TIN	BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1 mm	100000 Write/Erase Cycles	150 MHz	6 mm			SPI		33554432 bit	1.7 V		e3			NOR TYPE	.000001 Amp	8 mm
MT25QU512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V		e1	30	260			8 mm		1.8
S25FL256LAGBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S26KS512SDPBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm					536870912 bit	1.7 V							8 mm	96 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.