24 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
MT35XU512ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		536870912 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V		e1	30	260			8 mm		1.8
S25FL128SAGBHM200	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words		3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		32MX4	32M	-40 Cel		BOTTOM			R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1						8 mm		3
S79FL01GSDSBHVC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	3 V					NOR TYPE	.0006 Amp	8 mm		3
MT35XU256ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V		e1	30	260			8 mm		1.8
S25FL128SAGBHVB03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words		3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm		3
S25FS512SDSBHB210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR		YES	1		AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		536870912 bit	1.7 V		e1			NOR TYPE	.0001 Amp	8 mm		1.8
MT35XL512ABA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words		3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V		e1	30	260			8 mm		3
MT35XU01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		1073741824 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V		e1	30	260			8 mm		1.8
S25FL128SAGBHVB00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words		3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0003 Amp	8 mm		3
S25FS128SDSBHB200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S25FS512SAGBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V		e1			NOR TYPE	.0001 Amp	8 mm		1.8
S26KS512SDPBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words		1.8		8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM			R-PBGA-B24	3	2 V	1 mm			6 mm					536870912 bit	1.7 V							8 mm	96 ns	1.8
MT29F4G01ABAFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	536870912 words		3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		4294967296 bit	2.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.00005 Amp	8 mm		3.3
MT35XU01GBBA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1073741824 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		1GX1	1G	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V		e1	30	260			8 mm		1.8
MT35XU02GCBA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2147483648 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V		e1	30	260			8 mm		1.8
S25FL128LDPBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL128SAGBHEA00	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	16MX8	16M	-55 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S26KL256SDABHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		33554432 words		3		8	GRID ARRAY						85 Cel		32MX8	32M	-40 Cel		BOTTOM			R-PBGA-B24	3	3.6 V									268435456 bit	2.7 V								96 ns	3
MT35XU01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm		1.8
MT35XU02GCBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		2147483648 bit	1.7 V		e1	30	260	NOR TYPE		8 mm		1.8
MT35XU02GCBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					2147483648 bit	1.7 V		e1	30	260			8 mm		1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V		e1	30	260			8 mm		1.8
MT35XU512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	1.7 V		e1	30	260	NOR TYPE		8 mm		1.8
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	33554432 words		3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm		3
N25Q128A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words		1.8	1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V		e1			NOR TYPE	.00001 Amp	8 mm		3
N25Q512A83G1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	15 mA	536870912 words		3		1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE	.0005 Amp	8 mm		3
S25FL128LAGBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	50 mA	16777216 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL128SAGBHBB03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words		3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		32MX4	32M	-40 Cel		BOTTOM			R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1						8 mm		3
S25FL164K0XBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	16777216 words		3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1	e1			NOR TYPE	.000005 Amp	8 mm		3
S25FL256LAGBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	50 mA	33554432 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00006 Amp	8 mm		3
S25FL256SAGBHEA00	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	COMMON	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL256SAGBHIA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words		3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm		3
S25FL256SAGBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words		3		4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1	e1			NOR TYPE		8 mm		3
S25FL256SDPBHIC03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words		3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm		3
S25FL512SAGBAEC10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel	TIN LEAD	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V		e0			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SAGBHVB10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDPBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FL512SDPBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V		e1			NOR TYPE	.0003 Amp	8 mm		3
S25FS064SDSBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words		1.8		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		16MX4	16M	-40 Cel		BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1						8 mm		1.8
S25FS128SDSBHM200	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words		1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
S26KL128SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		16777216 words		3		8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM			R-PBGA-B24	3	3.6 V	1 mm			6 mm					134217728 bit	2.7 V							8 mm	96 ns	3
S26KL512SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words		3		8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24	3	3.6 V	1 mm			6 mm					536870912 bit	2.7 V		e1					8 mm	96 ns	3
S26KS256SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		33554432 words		1.8		8	GRID ARRAY						105 Cel		32MX8	32M	-40 Cel		BOTTOM			R-PBGA-B24	3	1.95 V									268435456 bit	1.7 V								96 ns	1.8
S70FL01GSDSBHBC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S70FL01GSDSBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S79FL01GSDSBHBC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words		3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	3 V		e1			NOR TYPE		8 mm		3
SST26WF064CT-104I/TD	Microchip Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	25 mA	67108864 words		1.8		1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			100	1 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI		67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp	8 mm		1.8
S26HL01GTFPBHM030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words		3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel		BOTTOM		HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.