24 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
S70FL01GSAGBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	128MX8	128M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		1073741824 bit	2.7 V					NOR TYPE		8 mm		3
IS25WP064A-RHLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		133 MHz	6 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MX25L1606EXCI-12G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	Flash Memories	20	1 mm	85 Cel			2MX8	2M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified		SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3
N25Q128A13E1241F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm		3
W25Q512JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	3 V	ALSO OPERATES AT 2.7VMIN @104MHZ				NOR TYPE	.00006 Amp	8 mm		3.3
MX25UM51245GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel			64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm					536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
S25FL128SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FS064SAGBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	105 Cel	NO		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm			SPI		67108864 bit	1.7 V						.00009 Amp	8 mm		1.8
S25FS064SAGBHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	8388608 words	1.8		8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	105 Cel	NO		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm			SPI		67108864 bit	1.7 V						.00009 Amp	8 mm		1.8
S25FL128SAGBHI310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			32MX4	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25FL512SAGBHID10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FS128SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			2	1 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V					NOR TYPE	.0003 Amp	8 mm		1.8
MT35XU512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel			64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	1.7 V		e1	30	260	NOR TYPE		8 mm		1.8
MX25L51245GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel			128MX4	128M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm					536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm		2.7
S25FL512SAGBHI313	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S25FL512SAGBHID13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm		3
S28HS512TGABHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	173 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel		BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	1.7 V					NOR TYPE	.00034 Amp	8 mm		1.8
IS26KL256S-DABLI00	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel			32MX8	32M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm					268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	96 ns	3
MT25QL02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	60 mA	536870912 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel			512MX4	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		2147483648 bit	2.7 V	MEMORY WIDTH CAN ALSO ORGANISED AS X1	e1			NOR TYPE	.00005 Amp	8 mm		3
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel			256MX4	256M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			8 mm		3
N25Q128A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm		3
S25FL256SAGBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel			64MX4	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e1			NOR TYPE	.0001 Amp	8 mm		3
S25FL256SAGBHI310	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
MT35XU02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel			256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		2147483648 bit	1.7 V		e1	30	260	NOR TYPE		8 mm		1.8
MX25L6433FXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	17 mA	16777216 words	3		4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2		20	1 mm	85 Cel			16MX4	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e1	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3
MX66L51235FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	134217728 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel			128MX4	128M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	8 mm		3
N25Q128A11E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V		e1			NOR TYPE	.00001 Amp	8 mm		3
N25Q128A13E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX1	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V		e1	30	260	NOR TYPE	.0001 Amp	8 mm		3
N25Q256A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	268435456 words	3		1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel			256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V		e1			NOR TYPE	.00025 Amp	8 mm		3
W25N01GVTBIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	1073741824 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel			1GX1	1G	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25Q128JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		1.8
IS25WP01G-RILE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8		8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel			128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.4 mm		104 MHz	6 mm					1073741824 bit	1.7 V							8 mm		1.8
IS25WP512M-RHLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel		3-STATE	64MX8	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.65 V		e1	10	260	NOR TYPE	.00014 Amp	8 mm		1.8
MT25QL01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2147483648 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel			2GX1	2G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					2147483648 bit	2.7 V		e1	30	260	NOR TYPE		8 mm		3
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel			64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		250 MHz	6 mm					536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
S25FL129P0XBHI200	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI		134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm		3
S25FL256SAGBHI300	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2	Flash Memories	20	1 mm	85 Cel			64MX4	64M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1				NOR TYPE	.0001 Amp	8 mm		3
S25HS02GTDPBHV150	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel		3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm			SPI		2147483648 bit	1.7 V					NOR TYPE	.00045 Amp	8 mm		1.8
S26KS512SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel			64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm					536870912 bit	1.7 V							8 mm	96 ns	1.8
IS25WP512M-RHLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.65 V		e1	10	260	NOR TYPE	.00026 Amp	8 mm		1.8
IS25WX256-JHLE	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	70 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			100	1 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm		9
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel			16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MT25QU01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		60 mA	134217728 words	1.8	1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel			128MX8	128M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	133 MHz		Not Qualified		SPI		1073741824 bit						NOR TYPE	.00005 Amp
MT25QU02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel			2GX1	2G	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V		e1			NOR TYPE		8 mm		1.8
MT25QU512ABA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel			512MX1	512M	-40 Cel		BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm					536870912 bit	1.7 V					NOR TYPE		8 mm		3
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		536870912 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel			512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V		e1	30	260			8 mm		3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel			64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm		3
MT35XU02GCBA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		2147483648 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel			2GX1	2G	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V		e1	30	260			8 mm		1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.