8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
IS25LP032D-JNLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3
IS25WP064A-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.85 mm		133 MHz	6 mm				67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	1.8
IS37SML01G1-LLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX8	128M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.85 mm		104 MHz	6 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	3.3
M25P40-VMN6	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.00001 Amp	4.9 mm	2.7
W25Q40EWSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	4194304 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.85 mm	1.8
W25X40CLUXIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	Not Qualified		SPI	4194304 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	2.7
IS25LP016D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	16777216 bit	2.3 V		e3			NOR TYPE	.00002 Amp	8 mm	3
MX25L12845GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	2.16 mm		120 MHz	5.23 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	e3					5.28 mm	3
S25FL064LABNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FS128SAGNFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
SST26WF080B-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI	8388608 bit	1.65 V		e3			NOR TYPE	.000005 Amp	6 mm	1.8
W25Q80EWSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.85 mm	1.8
AT25SF321B-SSHB-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm			SPI	33554432 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp	4.925 mm	3
GD25Q16CEIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	120 MHz	2 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.000005 Amp	3 mm	3.3
GD25Q16ETIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3.3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI	16777216 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	4.9 mm	3.3
GD25Q32ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	33554432 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	5.28 mm	3.3
IS25LP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MTSD032AHC6MS-1WTCS	Micron Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		34359738368 words	3.3		8	UNCASED CHIP						85 Cel		32GX8	32G	-25 Cel		UPPER			R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm			SPI	274877906944 bit	2.7 V					TLC NAND TYPE		15 mm	3.3
SST25VF016B-50-4C-QAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.7 V					NOR TYPE	.00002 Amp	6 mm
AT25SF321-SHD-T	Renesas Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm			SPI	33554432 bit	2.5 V					NOR TYPE	.000025 Amp	5.29 mm	3
AT45DB041D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI	4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	5.29 mm	2.7
IS25LP032D-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE		1			1.27 mm	125 Cel		4MX8	4M	-40 Cel	Tin (Sn)	DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
IS25LP128F-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	6 mm				134217728 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			8 mm	3
M25P16-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	15 ms	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
W25N512GVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	6 mm				536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	3
W25Q128FVAIG	Winbond Electronics	FLASH	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	IN-LINE	DIP8,.3		Flash Memories	20	2.54 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.33 mm	100000 Write/Erase Cycles	104 MHz	7.62 mm	Not Qualified		SPI	134217728 bit	2.7 V					NOR TYPE	.00002 Amp	9.27 mm	3
W25Q256JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	12 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	1.8
AT25DN512C-SSHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	4.925 mm	3
AT25FF161A-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI	16777216 bit	1.65 V		e4			NOR TYPE	.00005 Amp	5.29 mm	1.8
AT25XE041B-MHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words			1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel		DUAL			R-PDSO-N8	1	3.6 V			85 MHz					4194304 bit	1.7 V								1.8
AT45DB041D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	4.925 mm	2.7
IS25LP128F-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI	134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY	e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	8 mm	3
IS25WP256E-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	6 mm				268435456 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MT25QL128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	35 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.285 mm			SPI	134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm	3
AT25DF641A-MH-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	40 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm	Not Qualified		SPI	67108864 bit	2.7 V		e4			NOR TYPE	.00002 Amp	6 mm	2.7
AT25EU0021A-SSHN-B	Renesas Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	1.8		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm			SPI	2097152 bit	1.65 V					NOR TYPE	.0000145 Amp	4.925 mm	1.8
AT25XE081D-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3		4	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX4	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI	8388608 bit	2.7 V					NOR TYPE	.00005 Amp	5.29 mm	3.3
IS25WP256E-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	6 mm				268435456 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
TS8GUSDHC10U1	Transcend Information	FLASH CARD	OTHER	8	DIE	RECTANGULAR			1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8589934592 words			8	UNCASED CHIP	DIE OR CHIP					85 Cel		8GX8	8G	-25 Cel		SINGLE			R-XUUC-N8									SPI	68719476736 bit						MLC NAND TYPE
W25Q32JWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	5 mm				33554432 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
AT25SF161B-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.00003 Amp	5.29 mm	3
AT45DB081D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	8388608 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	4.925 mm	2.7
AT45DB081E-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified		SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4			NOR TYPE	.00004 Amp	6 mm	3
IS25LP016D-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	2MX8	2M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	16777216 bit	2.3 V		e3			NOR TYPE	.00003 Amp	5.28 mm	3
MX25U12832FZNI02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	1.65 V					NOR TYPE	.000005 Amp	6 mm	1.8
SST26VF016BT-104V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	4.9 mm	3
SST26VF064BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
SST26WF016BA-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.