8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
W25Q64BVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified		SPI		67108864 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	2.7
AT25DF512C-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		524288 bit	2.3 V					NOR TYPE	.000015 Amp	4.925 mm	3
AT25DQ321-SH-B	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		100 MHz	5.24 mm					33554432 bit	2.7 V		e4		260	NOR TYPE		5.29 mm	2.7
AT25SF128A-SHBHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words			8	SMALL OUTLINE	SOP8,.3			10	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	10000 Write/Erase Cycles	108 MHz	5.24 mm			SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	5.29 mm
AT25SF161B-MHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	5 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.00003 Amp	6 mm	3
AT25XE321D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8			20	.35 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B12	1	3.6 V	.461 mm	100000 Write/Erase Cycles	133 MHz	1.767 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY				NOR TYPE	.00005 Amp	2.387 mm	1.8
AT45DB021D-SH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		66 MHz	5.24 mm					2097152 bit	2.7 V		e4		260			5.29 mm	2.7
AT45DB041B-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		20 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	5.29 mm	2.7
AT45DB321E-MWHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm					33554432 bit	2.3 V		e4		260			8 mm	3
IS25WP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.85 mm		133 MHz	6 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MX25L12833FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel		16MX8	16M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V	IT CAN ALSO BE CONFIGURED AS 64M X 2 AND 128M X 1	e3			NOR TYPE	.00005 Amp	8 mm	3
MX25L12872FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm					134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
MX25L25645GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00002 Amp	8 mm	3
MX25L3233FZBI-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	4		20	.8 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4 mm	3
MX25L3233FZBI-08QTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	4		20	.8 mm	85 Cel		4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm			SPI		33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	4 mm	3.3
MX25U6435FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8	1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		16MX4	16M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		67108864 bit	1.65 V	CAN BE ORGANISED AS 64 MBIT X 1	e3			NOR TYPE	.00002 Amp	6 mm	1.8
S25FL032P0XMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm					33554432 bit	2.7 V		e3					5.28 mm	3
S25FL032P0XMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	4096 words	3	3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI		65536 bit	2.7 V		e3	40	260	NOR TYPE	.00001 Amp	5.283 mm	3
S25FL127SABMFI103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3		260	NOR TYPE	.0001 Amp	5.28 mm	3
S25FL164K0XMFI011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		67108864 bit	2.7 V					NOR TYPE	.000008 Amp	5.28 mm	3
S25FS128SAGMFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
S25FS128SAGNFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	6 mm	1.8
SST25VF080B-50-4C-QAF	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST26VF064BEUIT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	2.7 V					NOR TYPE	.045 Amp	5.26 mm
SST26VF064BT-104V/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25Q128FVPIF	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm					134217728 bit	2.7 V					NOR TYPE		6 mm	3
W25Q16DVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		16777216 bit	2.7 V		e3			NOR TYPE	.000005 Amp	5.23 mm	2.7
W25Q20EWSVIG	Winbond Electronics	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	1.8	1.8	1	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	.9 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.9 mm	1.8
W25Q64FWZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	5 mm					67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
W25R256JVEIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	45 mA	33554432 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V				NOR TYPE	.000025 Amp	8 mm	3
AT45DB041D-SSU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	2.7	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.5 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3		260	NOR TYPE	.00001 Amp	4.925 mm	2.7
AT45DB041D-SU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	2.7	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.5 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3		260	NOR TYPE	.00001 Amp	5.29 mm	2.7
AT45DB041E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4			NOR TYPE	.00004 Amp	5.29 mm	3
AT45DB081E-MHN-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4			NOR TYPE	.00004 Amp	6 mm	3
AT45DB321E-MWHF-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm					33554432 bit	2.3 V		e4		260			8 mm	3
GD25Q32CSIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm			SPI	BOTTOM/TOP	33554432 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	2.7
GD25Q80EEIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	133 MHz	2 mm			SPI		8388608 bit	3 V	2.7V TO 3V @ 104MHZ				NOR TYPE	.00004 Amp	3 mm	3.3
IS25LP064A-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE					1.27 mm	125 Cel		64MX1	64M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
IS25LP128F-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	166 MHz	5.28 mm			SPI		134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	5.28 mm	3
M25P32-VMW6GBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.00001 Amp		2.7
M45PE80-VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
SST26VF016BT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	6 mm	3
W25Q80DLZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm					8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	2.7
W25Q80EWUXIETR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	1048576 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI		8388608 bit	1.65 V					NOR TYPE	.0000075 Amp	3 mm	1.8
W25R256JVEIQ	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V					NOR TYPE	.00012 Amp	8 mm	3
A25L032M-F	Amic Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		26 mA	4194304 words		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	70 Cel		4MX8	4M	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	100 MHz		Not Qualified		SPI		33554432 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000015 Amp		2.7
AT17F040-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3.3		1	SMALL OUTLINE	SOLCC8,.25				1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL GOLD	DUAL		HARDWARE	S-PDSO-N8	3	3.63 V	1.14 mm	100000 Write/Erase Cycles	33 MHz	5.99 mm	Not Qualified		2-WIRE		4194304 bit	2.97 V		e4	40	260		.001 Amp	5.99 mm	3.3
AT25DF081A-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		8388608 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.29 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.