8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
SST26VF032BAT-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25Q32FVZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm	2.7
W25Q64JVSSJM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q80EWZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8	1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	6 mm	1.8
W25X05CLSNIG	Winbond Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	12 mA	65536 words	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI	524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm	3
AT25DN256-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		256KX1	256K	-40 Cel		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm				262144 bit	2.3 V							4.925 mm	3
AT25DN512C-MAHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI	524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	3 mm	3
AT25DN512C-XMHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			20	.65 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	3 mm			SPI	524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	4.4 mm	3
AT25PE16-MHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18 mA	16777216 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm			SPI	16777216 bit	2.3 V						.00005 Amp	6 mm	1.8
AT25SF041B-MAHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18.5 mA	4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	2 mm			SPI	4194304 bit	2.7 V					NOR TYPE	.00003 Amp	3 mm	3
AT25SF041B-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18.5 mA	4194304 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI	4194304 bit	2.7 V					NOR TYPE	.00003 Amp	5.29 mm	3
AT25SF041B-SHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18.5 mA	4194304 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI	4194304 bit	2.7 V					NOR TYPE	.00003 Amp	5.29 mm	3
AT25SF081B-SHD-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI	8388608 bit	2.5 V					NOR TYPE	.00003 Amp	5.29 mm	3
AT25XE081D-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	3.3		4	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX4	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI	8388608 bit	2.7 V					NOR TYPE	.00005 Amp	5.29 mm	3.3
AT45DB021E-SSHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	2097152 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	1.65 V		e4			NOR TYPE	.000008 Amp	4.925 mm	2.7
AT45DB041E-SHNHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4		260	NOR TYPE	.00004 Amp	5.29 mm	3
AT45DB081E-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4(UNSPEC)			20	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.52 mm	100000 Write/Erase Cycles	133 MHz	1.605 mm			SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e3			NOR TYPE	.00004 Amp	2.317 mm	3
GD25Q64CWIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI	67108864 bit	2.7 V					NOR TYPE	.000005 Amp	6 mm	3.3
GD25WQ128ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16384 words	1.8		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm			SPI	131072 bit	1.65 V					NOR TYPE	.00005 Amp	5.28 mm	1.8
IS25LP032D-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			6 mm	3
IS25LP040E-JBLE	Integrated Silicon Solution	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm			SPI	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000018 Amp	5.28 mm	3
IS25LP040E-JYLE-TR	Integrated Silicon Solution	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	524288 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI	4194304 bit	2.3 V					NOR TYPE	.000018 Amp	3 mm	3
IS25LP064A-JKLE1	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	125 Cel		64MX1	64M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	3
IS25LP080D-JULA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	2 mm				8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3
IS25LQ025B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				262144 bit	2.3 V		e3	30	260			4.9 mm	3
IS25LQ025B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				262144 bit	2.3 V		e3	30	260			4.9 mm	3
IS25LQ032B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	2.7
IS25LQ512B-JULE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		524288 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel		512KX1	512K	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm				524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3 mm	3
IS25WP016D-JTLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	1		20	.8 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm			SPI	16777216 bit	1.65 V		e3			NOR TYPE	.00002 Amp	4 mm	1.8
IS25WP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		166 MHz	5 mm				134217728 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
M25PE40-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified		SPI	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25PE40VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	25 ms	SPI	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE40VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE40-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI	4194304 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	6 mm	2.7
MT25QL128ABA1ESE-MSIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm				134217728 bit	2.7 V			30	260			5.285 mm	3.3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L2006EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	3	3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		1MX2	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm	2.7
MX25L25735FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI	268435456 bit	2.7 V	CAN BE ORGNISED AS 256 MBIT X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm	3
MX25L32356M1I03	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI	33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE				NOR TYPE	.00002 Amp	4.9 mm	3
MX25L3235EZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	8388608 words	3.3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V	IT ALSO CONFIGURED AS 32M X 1	e3			NOR TYPE	.00004 Amp	6 mm	2.7
MX25L6433FM2J-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	67108864 bit	2.65 V	32MX2BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.28 mm	3
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	134217728 bit	1.65 V					NOR TYPE	.000005 Amp	8 mm	1.8
N25Q032A13EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	6 mm	2.7
N25Q064A13ESED0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	2.7
S25FL128LAGMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm	3
S25FL129P0XNFI000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL129P0XNFI001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI	134217728 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL208K0RMFI041	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	76 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	4.9 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.