8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FS128SAGMFV100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3		2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
SST26VF016B-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5		1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI	16777216 bit	2.3 V					NOR TYPE	.000025 Amp	4.9 mm	2.5
SST26VF016BT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5		1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI	16777216 bit	2.3 V					NOR TYPE	.000025 Amp	4.9 mm	2.5
SST25LF020A-33-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	2097152 words	3.3	3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	Matte Tin (Sn)	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	3 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm	3.3
SST25VF020-20-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	2097152 words		3/3.3	1	SMALL OUTLINE	SOP8,.23	Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm
SST26VF016BT-80E/MF	Microchip Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm			SPI	16777216 bit	2.3 V					NOR TYPE	.000025 Amp	6 mm	2.5
SST26VF080AT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3		1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	8388608 bit	2.7 V			30	260	NOR TYPE	.00002 Amp	4.9 mm	3
SST26VF080AT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	2.5		1	SMALL OUTLINE	SOP8,.23		100	1.27 mm	125 Cel	3-STATE	8MX1	8M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI	8388608 bit	2.3 V			30	260	NOR TYPE	.00003 Amp	4.9 mm	2.5
LE25FU406BTT	Onsemi	FLASH	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.00001 Amp
LE25S20MB-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm	1.8
LE25S40MB-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified	10 ms	SPI	4194304 bit	1.65 V		e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	1.8
LE25U40PCMC-AH-1	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words	2.5		8	SMALL OUTLINE				1.27 mm	105 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	3.6 V	1.75 mm		30 MHz	3.9 mm				4194304 bit	2.3 V		e3	30	260			4.9 mm	2.7
LE25U20AMB	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		256KX8	256K	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		30 MHz	3.9 mm				2097152 bit	2.3 V					NOR TYPE		4.9 mm	2.7
LE25FU406BMA	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.00001 Amp
LE25S161PCTXG	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	8 mA	2097152 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32		20	.8 mm	90 Cel		2MX8	2M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	2	1.95 V	.6 mm	100000 Write/Erase Cycles	70 MHz	3 mm			SPI	16777216 bit	1.65 V		e3	30	260	NOR TYPE	.00005 Amp	4 mm	1.8
LE25FW406M	Onsemi	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	524288 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	10	1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.000005 Amp
LE25S81FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel		1MX8	1M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm				8388608 bit	1.65 V		e3	30	260	NOR TYPE		4.9 mm	1.8
LE25FW808TT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	70 Cel		1MX8	1M	0 Cel		DUAL			R-PDSO-G8		3.6 V	.85 mm		50 MHz	4.4 mm	Not Qualified			8388608 bit	2.7 V					NOR TYPE		5.2 mm	3
LE25FS406LF	Onsemi	FLASH	COMMERCIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		15 mA	524288 words		1.8/2	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.00001 Amp
LE25S161XATAG	Onsemi	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	8 mA	2097152 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20		20	.5 mm	90 Cel		2MX8	2M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	1.95 V	.5 mm	100000 Write/Erase Cycles	70 MHz	1.53 mm			SPI	16777216 bit	1.65 V		e1	30	260	NOR TYPE	.00005 Amp	2.92 mm
LE25S40AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm				4194304 bit	1.65 V		e3	30	260	NOR TYPE		4.9 mm	1.8
LE25S80FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel		1MX8	1M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm				8388608 bit	1.65 V		e3			NOR TYPE		4.9 mm	1.8
LE25S20XATAG	Onsemi	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel		256KX8	256K	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B8	1	1.95 V	.33 mm		40 MHz	1.53 mm				2097152 bit	1.65 V		e1	30	260			1.55 mm	1.8
LE25FW806MA	Onsemi	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	70 Cel		1MX8	1M	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	8388608 bit						NOR TYPE	.00001 Amp
LE25W81QES00-AH-1	Onsemi	FLASH	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	2.6		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	70 Cel		1MX8	1M	-20 Cel	MATTE TIN	DUAL			R-PDSO-N8	3	3.6 V	.8 mm		30 MHz	5 mm				8388608 bit	2.45 V	OPERATING TEMP FOR WRITE OPERATION 0 TO 70	e3	30	260	NOR TYPE		6 mm	3
LE25FU206TT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	70 Cel		256KX8	256K	0 Cel		DUAL			R-PDSO-G8		3.6 V	.85 mm		30 MHz	4.4 mm				2097152 bit	2.3 V					NOR TYPE		5.2 mm	2.7
LE25S40FD-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	524288 words	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3			100000 Write/Erase Cycles	40 MHz		Not Qualified		SPI	4194304 bit			e3	30	260	NOR TYPE	.00001 Amp
LE25S161MDTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	2097152 words	1.8		8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	90 Cel		2MX8	2M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	1.95 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm			SPI	16777216 bit	1.65 V		e3	30	260	NOR TYPE	.00005 Amp	4.9 mm	1.8
LE25S161FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	2097152 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		20	1.27 mm	90 Cel		2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	.85 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm			SPI	16777216 bit	1.65 V		e4	30	260	NOR TYPE	.00005 Amp	4.9 mm	1.8
LE25S40AMCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words	1.8		8	SMALL OUTLINE				1.27 mm	90 Cel		512KX8	512K	-40 Cel	NICKEL GOLD PALLADIUM	DUAL			R-PDSO-G8	3	1.95 V	1.75 mm		40 MHz	3.9 mm				4194304 bit	1.65 V	ALSO AVAILABLE IN SOIC-8 PACKAGE		30	260	NOR TYPE		4.9 mm	1.8
LE25S81AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel		1MX8	1M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	1.95 V	.85 mm		70 MHz	3.9 mm				8388608 bit	1.65 V		e3	30	260			4.9 mm	1.8
LE25U40CQH-AH	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.5	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,25	Flash Memories	20	.65 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	3 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V		e3	30	260	NOR TYPE	.00001 Amp	4 mm	2.7
LE25FU106BMA	Onsemi	FLASH	COMMERCIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE, LOW PROFILE				1.27 mm	70 Cel		128KX8	128K	0 Cel		DUAL			R-PDSO-G8		3.6 V	1.7 mm		30 MHz	4.4 mm				1048576 bit	2.3 V					NOR TYPE		5 mm	2.7
LE25FW806T	Onsemi	FLASH	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	1048576 words		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	Flash Memories	10	.635 mm	70 Cel		1MX8	1M	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				10000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	8388608 bit						NOR TYPE	.00001 Amp
LE25FW806TT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	1048576 words		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	70 Cel		1MX8	1M	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	8388608 bit						NOR TYPE	.00001 Amp
LE25FU406BFN	Onsemi	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		524288 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL			R-XDSO-N8		3.6 V	.85 mm		30 MHz	5 mm	Not Qualified			4194304 bit	2.3 V							6 mm	2.7
LE25FS406FQ	Onsemi	FLASH	COMMERCIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		15 mA	524288 words		1.8/2	8	SMALL OUTLINE	SOLCC8,.16,25	Flash Memories	20	.635 mm	70 Cel		512KX8	512K	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.00001 Amp
LE25S80QHTWG	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.65 mm	90 Cel		1MX8	1M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8	3	1.95 V	.8 mm		40 MHz	3 mm				8388608 bit	1.65 V		e3					4 mm	1.8
LE25S40QE-AH	Onsemi	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	1.8	1.8	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	1.95 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	Not Qualified	10 ms	SPI	4194304 bit	1.65 V		e3			NOR TYPE	.00001 Amp	6 mm	1.8
LE25U20AQGTXG	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		262144 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		256KX8	256K	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		30 MHz	2 mm				2097152 bit	2.3 V							3 mm	2.7
LE25FW418ATT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	524288 words	3		8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		20	1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	.85 mm	100000 Write/Erase Cycles	50 MHz	4.4 mm			SPI	4194304 bit	2.7 V					NOR TYPE	.00005 Amp	5.2 mm	3
LE25U40CQE-AH	Onsemi	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.5	2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	6 mm	2.7
LE25S81AQE	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	90 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		2.4 V	.8 mm		70 MHz	5 mm				8388608 bit	1.65 V							6 mm	1.8
LE25FW203ATT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	262144 words		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	70 Cel		256KX8	256K	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	2097152 bit						NOR TYPE	.00001 Amp
LE25FU406BLF	Onsemi	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		15 mA	524288 words		2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	30 MHz		Not Qualified		SPI	4194304 bit						NOR TYPE	.00001 Amp
LE25S81MCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE				1.27 mm	90 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-G8		1.95 V	1.75 mm		40 MHz	3.9 mm				8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm	1.8
LE25U40CMDTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.5	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	2.7
LE25FW806M	Onsemi	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	Flash Memories	10	1.27 mm	70 Cel		1MX8	1M	0 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				10000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	8388608 bit						NOR TYPE	.00001 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.