8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25P40-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25P40-VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25P80-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		8MX1	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm	2.7
M25PX16-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V			30	260	NOR TYPE	.00001 Amp	4.9 mm	3
M25PX16-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	4.9 mm	3
MX25L25673GZNI-08G	Macronix	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		268435456 bit	2.7 V	ALSO ORGANISED AS 128MbX2 AND 256Mbx1				NOR TYPE	.0001 Amp	6 mm	3
MX25L3206EZUI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3	3/3.3	2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1	Flash Memories	20	.8 mm	85 Cel		16MX2	16M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4 mm	3.3
MX25L6445EM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified	5 ms	SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1, 20 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm	3
MX25R1635FM2IH1	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1						5.28 mm	3
MX25R2035FZUIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		524288 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		512KX4	512K	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		80 MHz	2 mm					2097152 bit	1.65 V	IT IS ALSO CONFIGURED AS 2M X 1		NOT SPECIFIED	NOT SPECIFIED			3 mm	3
MX25R3235FM2IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	4194304 words	1.8		8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm			SPI		33554432 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp	5.28 mm	1.8
MX25R4035FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		1MX4	1M	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					4194304 bit	1.65 V	IT IS ALSO CONFIGURED AS 4M X 1	e3					4.9 mm	3
MX25R4035FZUIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.5 mm	85 Cel		1MX4	1M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm					4194304 bit	1.65 V	IT IS ALSO CONFIGURED AS 4M X 1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		3 mm	3
MX25V16066M2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm			SPI		16777216 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ				NOR TYPE	.00002 Amp	5.28 mm	3
MX25V20066M1I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		2097152 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ				NOR TYPE	.00002 Amp	4.9 mm	3
N25Q064A13ESED0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	2.7
N25Q064A13ESED0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	2.7
N25Q128A13EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	125 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	3
S25FL032P0XMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm					33554432 bit	2.7 V		e3					5.28 mm	3
S25FL064P0XNFI001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			0.2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI		67108864 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL127SABMFV103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	3
S25FL128SDPNFI001	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0001 Amp	8 mm	3
S25FL208K0RMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified		SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm	3
S25FL256SAGNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	8 mm	3
S25FL256SAGNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	8 mm	3
SFSD4096N2BM1TO-E-GE-2A1-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4294967296 words	3.3		8	UNCASED CHIP						85 Cel		4GX8	4G	-25 Cel		UPPER			R-XUUC-N8		3.6 V	1.1 mm		100 MHz	11 mm					34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm	3.3
SST25VF020B-80-4C-SAE-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	2097152 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4.9 mm
SST25VF032B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	70 Cel		32MX1	32M	0 Cel	NICKEL PALLADIUM GOLD	DUAL			S-PDSO-G8		3.6 V	2.16 mm		50 MHz	5.275 mm	Not Qualified				33554432 bit	2.7 V		e4			NOR TYPE		5.275 mm	2.7
SST25VF032B-66-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm	2.7
SST25VF032B-66-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	33554432 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm
SST25VF032B-80-4I-QAE	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V		e3			NOR TYPE	.00002 Amp	6 mm	2.7
SST25VF040B-50-4C-SAF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Matte Tin (Sn)	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00002 Amp	4.9 mm
SST26VF016B-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V		e3	40	260	NOR TYPE	.000025 Amp	5.26 mm	3
SST26VF016BT-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm	3
SST26VF016BT-104V/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	6 mm	3
W25N512GWEIR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	6 mm					536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	1.8
W25Q256JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	12 mA	33554432 words	1.8		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm	1.8
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI		4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm	3
W25X20CLUXIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	2.5/3.3	1	SMALL OUTLINE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	Not Qualified		SPI		2097152 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	3 mm	3
A25L080O-UF/G	Amic Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3.3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	3 V					NOR TYPE	.000025 Amp	4.85 mm	2.7
AT25DN011-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		1MX1	1M	-40 Cel		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm					1048576 bit	2.3 V							4.925 mm	3
AT25FF321A-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4			NOR TYPE	.00005 Amp	4.925 mm	3.3
AT25SF128A-SHB-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm			SPI		134217728 bit	2.7 V					NOR TYPE	.000025 Amp	5.29 mm
AT25XE161D-UUN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	17.5 mA	2097152 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8			20	.35 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	3.6 V	.462 mm	100000 Write/Erase Cycles	108 MHz	1.737 mm			SPI		16777216 bit	1.65 V					NOR TYPE	.00005 Amp	1.767 mm	1.8
AT45DB021E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V		e4		260			5.29 mm	2.7
AT45DB041D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	4.925 mm	2.7
AT45DB041D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	5.29 mm	2.7
AT45DB161E-MHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	6 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.