8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25PE10-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI	1048576 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M25PE10-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI	1048576 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M25PE20-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI	2097152 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M25PX16-VMW6TG	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI	16777216 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp		3
M25PX80-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.3 V			30	260	NOR TYPE	.00001 Amp	4.9 mm	3
M25PX80-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.3 V			30	260	NOR TYPE	.00001 Amp	4.9 mm	3
N25Q032A13EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	6 mm	2.7
N25Q064A11EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel		DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	5 mm				67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm	1.8
N25Q128A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	134217728 bit	1.7 V			30	260	NOR TYPE	.00001 Amp	8 mm	1.8
S25FL204K0TMFI041	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	524288 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	4.9 mm	3
S25FL216K0PMFI040	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	65 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	4.9 mm	3
AT25DF041A-SSHF-T	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	14 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4			NOR TYPE	.000015 Amp	4.925 mm	2.7
AT25DF641-MWH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		8MX8	8M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-N8	3	3.6 V	1 mm		85 MHz	6 mm	Not Qualified	5 ms		67108864 bit	2.7 V		e4		260	NOR TYPE		8 mm	2.7
AT25DF641-MWH-Y	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	19 mA	8388608 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE	R-PDSO-N8		3.6 V	1 mm	1000000 Write/Erase Cycles	85 MHz	6 mm	Not Qualified	5 ms	SPI	67108864 bit	2.7 V		e4			NOR TYPE	.000005 Amp	8 mm	2.7
AT45DB041B-SC-2.5	Atmel	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	2.7	2.7/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		15 MHz	5.24 mm	Not Qualified		SPI	4194304 bit	2.5 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e0		240	NOR TYPE	.00001 Amp	5.29 mm	2.7
M25P16-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	4.9 mm	3
M25P16-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm	3
M25P20-VMN6	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	2097152 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	4.9 mm	2.7
M25P40-VMB6TPB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		512KX8	512K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	2 mm	Not Qualified		SPI	4194304 bit	2.7 V	SUBGROUP FLASH3V	e4	30	260	NOR TYPE	.00001 Amp	3 mm	2.7
M25P40-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm	2.7
M25P40-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V			30	260	NOR TYPE	.00005 Amp	4.9 mm	2.7
M25P80-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	8388608 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	8388608 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm	2.7
M25P80VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25PE20-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI	2097152 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M25PE80-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	23 ms	SPI	8388608 bit	2.7 V		e4	40	260	NOR TYPE	.00001 Amp	4.9 mm	2.7
M45PE80-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified	25 ms	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M45PE80-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M45PE80-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	33 MHz	5.25 mm	Not Qualified	25 ms	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.3 mm	2.7
N25Q032A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		32	SMALL OUTLINE					1.27 mm	85 Cel		1MX32	1M	-40 Cel		DUAL		S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm				33554432 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm	1.8
N25Q128A11BF840F	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		20 mA	16777216 words	1.8	1.8	8	SMALL OUTLINE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	108 MHz		Not Qualified		SPI	134217728 bit						NOR TYPE	.00001 Amp
N25Q256A13EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	125 Cel		256MX1	256M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	3
S25FL032P0XMFV013	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	4096 words	3	3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	105 Cel		4KX16	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8		3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI	65536 bit	2.7 V					NOR TYPE	.00001 Amp	5.283 mm	3
S25FL032P0XNFI001	Cypress Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	4096 words	3	3/3.3	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.55 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	3
S25FL032P0XNFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	4096 words	3	3/3.3	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI	65536 bit	2.7 V					NOR TYPE	.00001 Amp	8 mm	3
S25FL064LABNFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FL064LABNFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FL116K0XMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified		SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE	.000005 Amp	5.283 mm	3
S25FL116K0XMFI043	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm	3
S25FL128LAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	2.7 V					NOR TYPE	.00006 Amp	5.28 mm	3
S25FL128SDSNFI000	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		80 MHz	6 mm		500 ms		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3					8 mm	3
S25FL132K0XMFI011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI	33554432 bit	2.7 V					NOR TYPE	.000008 Amp	5.28 mm	3
S25FL132K0XNFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		8MX4	8M	-40 Cel		DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1		NOT SPECIFIED	NOT SPECIFIED			6 mm	3
S25FL132K0XNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1	e3			NOR TYPE	.000005 Amp	6 mm	3
S25FL216K0PMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	65 MHz	5.283 mm	Not Qualified		SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm	3
S25FS064SAGNFN030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel		BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm				67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1						6 mm	1.8
S25FS064SAGNFV030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel		BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm				67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1						6 mm	1.8
S25FS064SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm				67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1	e3					5.283 mm	1.8
S25FS128SAGMFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.