8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25FS128SAGMFI103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI	134217728 bit	1.7 V		e3			NOR TYPE	.0003 Amp	5.28 mm	1.8
SFSD4096N1BW1MT-E-DF-111-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4294967296 words	3.3		8	UNCASED CHIP						85 Cel		4GX8	4G	-25 Cel		UPPER			R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15 mm	3.3
SFSD4096N1BW1MT-I-DF-111-STD	Swissbit Ag	FLASH CARD	INDUSTRIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4294967296 words	3.3		8	UNCASED CHIP						85 Cel		4GX8	4G	-40 Cel		UPPER			R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15 mm	3.3
SST25PF020B-80-4C-QAE	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	2097152 words		2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified	SPI	2097152 bit	2.3 V		e3			NOR TYPE	.00003 Amp	6 mm
SST25VF080B-50-4C-QAF-T	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST25WF080-75-4I-SAF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	1.8	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	100	1.27 mm	85 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI	8388608 bit	1.65 V		e4			NOR TYPE	.00002 Amp	4.9 mm	1.8
SST26VF016-80-5I-QAE	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified	SPI	16777216 bit	2.7 V		e3			NOR TYPE	.000015 Amp	6 mm
SST26VF032BT-104V/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3		8	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI	33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
SST26VF064BA-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	6 mm	3
W25N02KVZEIU	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm		SPI	2147483648 bit	2.7 V					SLC NAND TYPE	.00005 Amp	8 mm	3
W25Q16DVSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	4 mm	Not Qualified	SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5 mm	2.7
W25Q16JVUUIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.8 mm	85 Cel		2MX8	2M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	3 mm			16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			4 mm	3
W25Q32JWSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	1.8		8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.23 mm			33554432 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			5.23 mm	1.8
W25X05CLUXIGTR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	12 mA	65536 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	85 Cel		64KX8	64K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm		SPI	524288 bit	2.3 V					NOR TYPE	.00005 Amp	3 mm	3
AP-MSD08GIA-1HTM	Apacer Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8589934592 words			8	UNCASED CHIP						85 Cel		8GX8	8G	-40 Cel		UPPER			R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm		SPI	68719476736 bit	2.7 V					MLC NAND TYPE		15 mm
AT17F16A-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3.3		1	SMALL OUTLINE	SOLCC8,.24				1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL GOLD	DUAL			S-XDSO-N8	3	3.63 V	1.14 mm	10000 Write/Erase Cycles	10 MHz	5.99 mm	Not Qualified		16777216 bit	2.97 V		e4	40	260	NOR TYPE	.003 Amp	5.99 mm	3.3
AT25DN256-XMHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words	3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		256KX1	256K	-40 Cel		DUAL			R-PDSO-G8	1	3.6 V	1.2 mm		104 MHz	3 mm			262144 bit	2.3 V							4.4 mm	3
AT25SL321-UUE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	4194304 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,20			20	.5 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	2 V	.52 mm	100000 Write/Erase Cycles	104 MHz	1.551 mm		SPI	33554432 bit	1.7 V					NOR TYPE	.00005 Amp	2.284 mm	1.8
AT25XE041B-XMHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	1.8		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4MX1	4M	-40 Cel		DUAL			R-PDSO-G8	1	3.6 V	1.2 mm		85 MHz	3 mm			4194304 bit	1.65 V							4.4 mm	1.8
AT25XE321D-DWF	Renesas Electronics	FLASH	INDUSTRIAL	8	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	UNCASED CHIP				20		85 Cel	3-STATE	2MX16	2M	-40 Cel		UPPER		HARDWARE/SOFTWARE	X-XUUC-N	1	3.6 V		100000 Write/Erase Cycles	133 MHz			SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY				NOR TYPE	.00005 Amp		1.8
AT25XE321D-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm		SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		260	NOR TYPE	.00005 Amp	5.29 mm	1.8
AT25XE321D-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm		SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		260	NOR TYPE	.00005 Amp	5.29 mm	1.8
AT25XE321D-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		260	NOR TYPE	.00005 Amp	4.925 mm	1.8
AT25XE321D-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm		SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		260	NOR TYPE	.00005 Amp	4.925 mm	1.8
AT45DB021D-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		66 MHz	5.24 mm			2097152 bit	2.7 V		e4		260			5.29 mm	2.7
AT45DB021D-SSH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm			2097152 bit	2.7 V		e4		260			4.925 mm	2.7
AT45DB021D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	2.7 V					NOR TYPE	.00001 Amp	4.925 mm	2.7
AT45DB021D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified	SPI	2097152 bit	2.7 V					NOR TYPE	.00001 Amp	5.29 mm	2.7
AT45DB021E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm			2097152 bit	1.65 V		e4		260	NOR TYPE		5.29 mm	2.7
AT45DB021E-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	2097152 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	1.65 V		e4			NOR TYPE	.000008 Amp	4.925 mm	2.7
AT45DB041D-SSU-2.5-SL383	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	2.7		1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm			4194304 bit	2.5 V		e3			NOR TYPE		4.925 mm	2.7
AT45DB041D-SSU-SL383	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm			4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3			NOR TYPE		4.925 mm	2.7
AT45DB041E-SSHNHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified	SPI	4194304 bit	2.3 V		e4			NOR TYPE	.00004 Amp	4.925 mm	3
AT45DB321D-MWU	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	SPI	33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH	e3			NOR TYPE	.00001 Amp	8 mm	2.7
EPCQ32SI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3.3		1	SMALL OUTLINE	SOP8,2			20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			33554432 bit	2.7 V		e4	40	260	NOR TYPE	.0001 Amp	4.9 mm	2.7
GD25Q127CSIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	27 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm		SPI	134217728 bit	2.7 V					NOR TYPE	.00005 Amp	5.28 mm	3.3
GD25Q16CSFGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	3.3
GD25Q16ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm		SPI	16777216 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	5.28 mm	3.3
GD25Q64EWIGR	Gigadevice Semiconductor	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	6 mm	3.3
GD25Q80CTIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3.3		1	SMALL OUTLINE					1.27 mm	85 Cel		8MX1	8M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		120 MHz	3.9 mm			8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm	3.3
IS25LP064D-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	5 mm			67108864 bit	2.7 V		e3	30	260			6 mm	3
IS25LQ010B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		1MX1	1M	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm			1048576 bit	2.3 V		e3	30	260			4.9 mm	3
IS25WP016D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm			16777216 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
IS25WP128F-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	166 MHz	5 mm		SPI	134217728 bit	1.65 V	ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000075 Amp	6 mm	1.8
LE25U20AFD-AH	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	2.5	2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	.85 mm	100000 Write/Erase Cycles	30 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	2.3 V		e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	3
M25P10-AVMN6	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI	1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	4.9 mm	2.7
M25P10-AVMN6T	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	SPI	1048576 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	4.9 mm	2.7
M25P32-VMW6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	20 MHz	5.62 mm	Not Qualified	SPI	33554432 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.62 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.