8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Programming Voltage (V)	Data Polling
AT25DF321A-MH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			4MX8	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V		e4	30	260	NOR TYPE	.00001 Amp	6 mm		2.7
AT25SF128A-CCUB-T	Dialog Semiconductor	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3.3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel			128MX1	128M	-40 Cel		TIN	BOTTOM			R-PBGA-B8		3.6 V	1.2 mm		133 MHz	6 mm				134217728 bit	3 V		e3					8 mm		2.7
AT25XE321D-MHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	16.5 mA	2097152 words	3.3		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		3-STATE	2MX16	2M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	33554432 bit	2.7 V	ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY	e4		260	NOR TYPE	.00005 Amp	5 mm		1.8
AT45DB011D-SH-T	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			1MX1	1M	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI	1048576 bit	2.7 V		e4			NOR TYPE	.000015 Amp	5.29 mm		2.7
AT45DB161D-MU-2.5	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	16777216 words	2.7	2.7/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			16MX1	16M	-40 Cel		Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.5 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH	e3	40	260	NOR TYPE	.000025 Amp	6 mm		2.7
GD25Q64ETIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel			8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI	67108864 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	4.9 mm		3.3
IS25LP032D-JNLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE		1			1.27 mm	125 Cel			4MX8	4M	-40 Cel		Tin (Sn)	DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			4.9 mm		3
IS25LP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel			16MX8	16M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	5 mm				134217728 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			6 mm		3
IS25LQ032B-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel			32MX1	32M	-40 Cel			DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm		2.7
IS25WP256D-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	33554432 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.85 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI	268435456 bit	1.65 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm		1.8
M25P10-AVMN6TPYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm				1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		4.9 mm		2.7
M25P80-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel			8MX1	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm		2.7
M25P80-VMW6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			1MX8	1M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified		SPI	8388608 bit	2.7 V	LG-MAX		30	260	NOR TYPE	.00001 Amp	6.05 mm		2.7
MX25L1606EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	Flash Memories	20	1.27 mm	85 Cel			2MX8	2M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.7 V		e3			NOR TYPE	.00002 Amp	6 mm		3
MX25R1635FZNIH0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel			4MX4	4M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm				16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1		NOT SPECIFIED	NOT SPECIFIED			6 mm		3
MX25U6432FZBI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.12,32	2		20	.8 mm	85 Cel			8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.6 mm		133 MHz	3 mm				67108864 bit	1.65 V	64MX1BIT				NOR TYPE	.000005 Amp	4 mm		1.8
MX25V1635FZNI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel			4MX4	4M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm				16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			6 mm		3
N25Q128A11ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			128MX1	128M	-40 Cel		Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI	134217728 bit	1.7 V		e3	30	260	NOR TYPE	.00001 Amp	5.285 mm		3
N25Q256A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel			32MX8	32M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	268435456 bit	2.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE		30	260	NOR TYPE	.0001 Amp	8 mm		3
S25FL032P0XMFI013	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	38 mA	4096 words	3	3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			4KX16	4K	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI	65536 bit	2.7 V		e3			NOR TYPE	.00001 Amp	5.283 mm		3
S25FL116K0XMFI041	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel			4MX4	4M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1	e3			NOR TYPE	.000005 Amp	4.9 mm		3
S25FL256LAGNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		3-STATE	32MX8	32M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	8 mm		3
S25FL256LAGNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	8 mm		3
SST25VF040B-50-4I-QAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	4194304 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST25WF020A-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	1.8		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel		3-STATE	2MX1	2M	-40 Cel		MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI	2097152 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm		1.8
SST26VF016B-104V/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel		3-STATE	16MX1	16M	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm		3
SST26WF040B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	1.8		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	4194304 bit	1.65 V		e3			NOR TYPE	.000005 Amp	4.9 mm		1.8
W25M02GVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1073741824 words	3		2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel			1GX2	1G	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm				2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm		3
W25Q128JWSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm		1.8
W25X40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel			4MX1	4M	-40 Cel			DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				4194304 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ		NOT SPECIFIED	NOT SPECIFIED			5.28 mm		2.7
AT25DF041A-SSH-T	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V		e4			NOR TYPE	.000015 Amp	4.925 mm		2.7
AT25DN512C-XMHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	65536 words	3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			20	.65 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	3 mm			SPI	524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	4.4 mm		3
AT45DB161E-MHF-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			16MX1	16M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	6 mm		2.7
EPCS1SI8	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words	3.3	3.3	1	SMALL OUTLINE			Flash Memories			85 Cel		3-STATE	128KX8	128K	-40 Cel		TIN LEAD	DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			1048576 bit	2.7 V		e0				.00005 Amp
M25P16-VMC6G	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel			2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	3 mm	Not Qualified		SPI	16777216 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	4 mm		3
MT25QU128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	35 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel			16MX8	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm			SPI	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm		1.8
MX25L1606EM1S-12G	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm				2MX8	2M				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm			SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	4.9 mm		3
MX25U3235FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8	1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel			8MX4	8M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	33554432 bit	1.65 V	CAN BE ORGANISED AS 32 MBIT X 1	e3			NOR TYPE	.00002 Amp	6 mm		1.8
MX25U51245GZ4I54	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			1.27 mm	85 Cel			64MX8	64M	-40 Cel		Tin (Sn)	DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm				536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1	e3					8 mm		1.8
MX25U6432FZNI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	2		20	1.27 mm	85 Cel			8MX8	8M	-40 Cel		Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.8 mm		133 MHz	5 mm				67108864 bit	1.65 V	64MX1BIT	e3			NOR TYPE	.000005 Amp	6 mm		1.8
MX25V4035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel			1MX4	1M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm				4194304 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 4M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			6 mm		3
S25FL064LABMFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE		2			1.27 mm	125 Cel			16MX4	16M	-40 Cel		MATTE TIN	DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm		3
SDSDQ-4096	Western Digital	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4294967296 words			8	UNCASED CHIP					1.1 mm	85 Cel	NO		4GX8	4G	-25 Cel	YES		UPPER		SOFTWARE	R-XUUC-N8		3.6 V	.95 mm		50 MHz	11 mm				34359738368 bit	2.7 V					NAND TYPE		15 mm	NO	2.7	NO
SST25PF040C-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel		MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI	4194304 bit	2.3 V		e3	40	260	NOR TYPE	.00001 Amp	4.9 mm		3.3
SST25VF080B-50-4I-QAF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		3-STATE	8MX1	8M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST26VF016BEUIT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE, LOW PROFILE	SOP8,.3			100	1.27 mm	85 Cel		3-STATE	16MX1	16M	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-C48		3.6 V	1.68 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V					NOR TYPE	.000025 Amp	4.89 mm		3
SST26VF064B-104V/MN	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			100	1.27 mm	105 Cel		3-STATE	64MX1	64M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm			SPI	67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	8 mm		3
TC58CVG2S0HRAIG	Toshiba	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1073741824 words			4	SMALL OUTLINE		2				85 Cel			1GX4	1G	-40 Cel			DUAL			R-PDSO-N8		3.6 V								4294967296 bit	2.7 V	IT ALSO ORGANIZED AS 4G X 1		NOT SPECIFIED	NOT SPECIFIED					2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.