8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Programming Voltage (V)	Data Polling
W25Q01JVZEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel			128MX8	128M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
XTSD04GLGEAG	Xtx Technology	FLASH		8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4294967296 words			1	SMALL OUTLINE									4GX1	4G				DUAL			R-XDSO-N8		3.6 V								4294967296 bit	2.7 V									2.7
EN25Q80C-104HIP2A	Elite Semiconductor Microelectronics Technologyinc	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.2 mm	100000 Write/Erase Cycles	104 MHz	5.275 mm			SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.275 mm		3
IS25WP512M-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel			64MX8	64M	-40 Cel			DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	6 mm				536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
M25P80-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			1MX8	1M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI	8388608 bit	2.7 V		e3			NOR TYPE	.00001 Amp	5.3 mm		2.7
MT29F1G01ABBFDWB-IT:FTR	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	134217728 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel		3-STATE	128MX8	128M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		1.95 V	.65 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI	1073741824 bit	1.7 V					SLC NAND TYPE	.00005 Amp	8 mm		1.8
MX25U12835FZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	1.8	1.8	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel			32MX4	32M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI	134217728 bit	1.65 V	CAN BE ORGANISED AS 128 MBIT X 1	e3			NOR TYPE	.00002 Amp	6 mm		1.8
MX66L51235FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	40 mA	134217728 words	3	3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel			128MX4	128M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI	536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE	.00004 Amp	8 mm		3
S25FL256LAGNFV011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	50 mA	33554432 words	3		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	2.7 V		e3			NOR TYPE	.00006 Amp	8 mm		3
S25FS512SAGNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	100 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		3-STATE	64MX8	64M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	1.7 V		e3	30	260	NOR TYPE	.0001 Amp	8 mm		1.8
W25Q128FVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel			128MX1	128M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI	134217728 bit	2.7 V					NOR TYPE	.00002 Amp	8 mm		3
AT25SL641-MHE-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	27 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	2 V	.6 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	67108864 bit	1.7 V					NOR TYPE	.00005 Amp	6 mm		1.8
AT45DB081E-SSHNHA-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4			NOR TYPE	.00004 Amp	4.925 mm		3
GD25LQ64ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	67108864 bit	1.65 V					NOR TYPE	.00004 Amp	5.28 mm		1.8
IS25WP512M-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	105 Cel		3-STATE	64MX8	64M	-40 Cel		Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	536870912 bit	1.65 V		e3	10	260	NOR TYPE	.00014 Amp	8 mm		1.8
M25PE40VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			512KX8	512K	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	25 ms	SPI	4194304 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm		2.7
M25PE40-VMN6TP	Alliance Memory	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm			SPI	4194304 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	4.9 mm		3
MX25L6406EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1	Flash Memories	20	1.27 mm	85 Cel			8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified		SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3.3
N25Q512A13GF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	536870912 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel			512MX1	512M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0005 Amp	8 mm		3
SST26WF080BT-104I/NP	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		3-STATE	8MX1	8M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm			SPI	8388608 bit	1.65 V		e3			NOR TYPE	.000005 Amp	3 mm		1.8
W25Q64JWSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	5.23 mm		1.8
XTSD01GLGEAG	Xtx Technology	FLASH		8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1073741824 words			1	SMALL OUTLINE									1GX1	1G				DUAL			R-XDSO-N8		3.6 V								1073741824 bit	2.7 V									2.7
AT25DF321A-MH-Y	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			4MX8	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V		e4	30	260	NOR TYPE	.00001 Amp	6 mm		2.7
AT25EU0011A-MAHN-T	Renesas Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	131072 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	85 MHz	2 mm			SPI	1048576 bit	1.65 V					NOR TYPE	.0000145 Amp	3 mm		1.8
AT25PE20-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel		3-STATE	256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm			SPI	2097152 bit	2.3 V		e4			NOR TYPE	.000012 Amp	4.925 mm		3
AT25SF041B-MAHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	18.5 mA	4194304 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	2 mm			SPI	4194304 bit	2.7 V					NOR TYPE	.00003 Amp	3 mm		3
AT25SF081B-SHB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI	8388608 bit	2.7 V					NOR TYPE	.00003 Amp	5.29 mm		3
AT25SF641B-SHB-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	19 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	64MX1	64M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.24 mm			SPI	67108864 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp	5.29 mm		3
AT45DB081D-SU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	8388608 words	2.7	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			8MX1	8M	-40 Cel		MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.24 mm	Not Qualified		SPI	8388608 bit	2.5 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH	e3		260	NOR TYPE	.00001 Amp	5.29 mm		2.7
GD25Q32CSIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	4MX8	4M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm			SPI	33554432 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm		3.3
IS25LP032D-JTLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.8 mm	105 Cel			4MX8	4M	-40 Cel			DUAL			R-PDSO-N8		3.6 V	.6 mm		133 MHz	3 mm				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			4 mm		3
MX25L6433FZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	8388608 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3	2		20	1.27 mm	85 Cel			8MX8	8M	-40 Cel		TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3			NOR TYPE	.00002 Amp	8 mm		3.3
MX25U12832FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	134217728 bit	1.65 V					NOR TYPE	.000005 Amp	5.28 mm		1.8
SDSDQ-2048	Western Digital	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2147483648 words			8	UNCASED CHIP					1.1 mm	85 Cel	NO		2GX8	2G	-25 Cel	YES		UPPER		SOFTWARE	R-XUUC-N8		3.6 V	.95 mm		50 MHz	11 mm				17179869184 bit	2.7 V					NAND TYPE		15 mm	NO	2.7	NO
SST26WF064C-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	25 mA	67108864 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel		3-STATE	64MX1	64M	-40 Cel		MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI	67108864 bit	1.65 V		e3			NOR TYPE	.000015 Amp	6 mm		1.8
AT25PE16-SHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel			16MX1	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm			SPI	16777216 bit	2.3 V						.00005 Amp	5.29 mm		1.8
AT25PE16-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel			16MX1	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm			SPI	16777216 bit	2.3 V						.00005 Amp	4.925 mm		1.8
AT45DB161E-MHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			16MX1	16M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.6 mm	100000 Write/Erase Cycles	70 MHz	5 mm	Not Qualified		SPI	16777216 bit	2.3 V		e4			NOR TYPE	.00001 Amp	6 mm		2.7
AT45DB321E-MWHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel			32MX1	32M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL			R-PDSO-N8	1	3.6 V	1 mm		85 MHz	6 mm				33554432 bit	2.3 V		e4					8 mm		3
GD25Q64ESIGR	Gigadevice Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel			8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	67108864 bit	3 V	2.7V TO 3V @ 120 MHZ				NOR TYPE	.00004 Amp	5.28 mm		3.3
IS25LP064D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel			8MX8	8M	-40 Cel		Tin (Sn)	DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	6 mm				67108864 bit	2.7 V		e3	30	260			8 mm		3
IS25LP080D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel			1MX8	1M	-40 Cel		TIN	DUAL			S-PDSO-G8	1	3.6 V	2.16 mm		133 MHz	5.28 mm				8388608 bit	2.3 V		e3	10	260			5.28 mm		3
IS25WP256D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	33554432 words	1.8		8	SMALL OUTLINE	SOLCC8,.3			20	1.27 mm	105 Cel		3-STATE	32MX8	32M	-40 Cel		Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.85 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI	268435456 bit	1.65 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm		1.8
MX25R3235FM2IH0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	4194304 words	1.8		8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel		3-STATE	4MX8	4M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	5.23 mm			SPI	33554432 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp	5.28 mm		1.8
MX25R8035FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel			2MX4	2M	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			4.9 mm		1.8
SST25PF040C-40V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	105 Cel		3-STATE	4MX1	4M	-40 Cel		MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI	4194304 bit	2.3 V		e3			NOR TYPE	.00001 Amp	4.9 mm		3.3
AT25DF041A-SSHF-B	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	14 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel			4MX1	4M	-40 Cel		NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4		260	NOR TYPE	.000015 Amp	4.925 mm		2.7
AT25DF041B-SSHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words			8	SMALL OUTLINE	SOP8,.25				1.27 mm	125 Cel			512KX8	512K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	20000 Write/Erase Cycles	85 MHz	3.9 mm			SPI	4194304 bit	1.7 V						.000065 Amp	4.925 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.