8 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
IS25LP064D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm				67108864 bit	2.7 V			30	250			5.28 mm	3
IS25WP080D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE					1.27 mm	105 Cel		1MX8	1M	-40 Cel		DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm				8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
M25P80-VMN3TP	STMicroelectronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI	8388608 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
M25P80-VMN3TP/4	STMicroelectronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		15 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		1MX8	1M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1			10000 Write/Erase Cycles	25 MHz		Not Qualified		SPI	8388608 bit			e3			NOR TYPE	.0001 Amp
MT25QL128ABB1EW7-CSIT	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	35 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	134217728 bit	2.7 V			30	260	NOR TYPE	.00003 Amp	6 mm	3
MX25L3206EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3	3/3.3	2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	Flash Memories	20	1.27 mm	85 Cel		16MX2	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	5 mm	Not Qualified		SPI	33554432 bit	2.7 V		e3			NOR TYPE	.00002 Amp	6 mm	3.3
MX25U12835FZNI-08G	Macronix	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	27 mA	33554432 words	1.8	1.8	4	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	10	1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	Not Qualified		SPI	134217728 bit	1.65 V	ALSO CONFIGURABLE AS 128M X 1	e3			NOR TYPE	.00002 Amp	6 mm	1.8
MX25U12872FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI	134217728 bit	1.65 V	IT ALSO CAN BE CONFIGURED AS 64M X 2				NOR TYPE	.000005 Amp	5.28 mm	1.8
MX25U6432FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	1.8		8	SMALL OUTLINE		4			1.27 mm	85 Cel		8MX8	8M	-40 Cel		DUAL			R-PDSO-G8		2 V	2.16 mm		133 MHz	5.23 mm				67108864 bit	1.65 V	32M X 2BIT		NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
MX25U8035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			.5 mm	85 Cel		1MX8	1M	-40 Cel		DUAL			R-PDSO-N8		2 V	.6 mm		108 MHz	2 mm				8388608 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 4M X 2 AND 8M X 1		NOT SPECIFIED	NOT SPECIFIED			3 mm	1.8
N25Q256A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	268435456 words	1.8	1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm	1.8
SST25VF040B-50-4C-QAF-T	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	4194304 bit	2.7 V		e4			NOR TYPE	.00003 Amp	6 mm
SST25VF040B-50-4C-SAF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
SST25VF040B-80-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX1	4M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4.9 mm	2.7
SST25VF080B-80-4I-S2AE	Microchip Technology	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		8MX1	8M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI	8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	5.275 mm	2.7
SST25VF512A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	524288 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI	524288 bit	2.7 V		e3			NOR TYPE	.000015 Amp	4.9 mm
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm			SPI	16777216 bit	2.3 V					NOR TYPE	.000025 Amp	5.26 mm	2.5
SST26VF016BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	5.26 mm	3
SST26VF020A-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	2097152 bit	2.7 V			30	260	NOR TYPE	.00002 Amp	4.9 mm	3
SST26VF032-80-5I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI	33554432 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	5.275 mm	2.7
SST26VF032BEUIT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	33554432 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm	3
W25Q128FVSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI	134217728 bit	2.7 V					NOR TYPE	.00002 Amp	5.28 mm	3
W25Q16CVSSJG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm			5.23 mm				16777216 bit	2.7 V							5.23 mm	2.7
W25Q16JVSNJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			4.85 mm	3
W25Q256FVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	268435456 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm	Not Qualified		SPI	268435456 bit	2.7 V					NOR TYPE	.000025 Amp	8 mm	3
W25Q32FVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI	33554432 bit	2.7 V					NOR TYPE	.00002 Amp	5.23 mm	2.7
W25Q32FVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI	33554432 bit	2.7 V					NOR TYPE	.00002 Amp	8 mm	2.7
W25Q32JWZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel		DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	5 mm				33554432 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	1.8
IS25LQ020B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		2MX1	2M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				2097152 bit	2.3 V							5.28 mm	3
M25P05-AVMN6T	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.000005 Amp	4.9 mm	2.7
M25P05-AVMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	65536 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.000005 Amp	4.9 mm	2.7
MT25QL256ABA1EW9-0AAT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		256MX1	256M	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm				268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L1606EZUI-12GTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1		20	.8 mm	85 Cel		2MX8	2M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm			SPI	16777216 bit	2.7 V		e3	40	260	NOR TYPE	.00002 Amp	4 mm	3
MX25R8035FM2IH0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		2MX4	2M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.23 mm				8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
MX25U6432FBBI02	Macronix	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	8388608 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA14,4X6,20	2		20	.5 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B14		2 V	.45 mm		133 MHz					67108864 bit	1.65 V	64MX1BIT				NOR TYPE	.000005 Amp		1.8
AT45D011-SC	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1048576 words	5	5	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm		15 MHz	5.27 mm	Not Qualified		SPI	1048576 bit	4.5 V	HARDWARE DATA PROTECTION	e0		240	NOR TYPE	.00002 Amp	5.31 mm	5
M25PE16-VMW6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	50 MHz	5.99 mm	Not Qualified	15 ms	SPI	16777216 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.3 mm	2.7
S25FL128LAGMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	2.7 V		e3			NOR TYPE	.00006 Amp	5.28 mm	3
N25Q064A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	1048576 words	3	3/3.3	64	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	3
S25FL064LABNFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					4 mm	3
S25FL064LABNFB040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel	MATTE TIN	DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					4 mm	3
M25PE80-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	50 MHz	5.59 mm	Not Qualified	23 ms	SPI	8388608 bit	2.7 V		e4	40	260	NOR TYPE	.00001 Amp	5.3 mm	2.7
S25FL208K0RMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified		SPI	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm	3
AT26DF161A-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V					NOR TYPE	.000015 Amp	4.925 mm	2.7
AT45DB021B-SI	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA	262144 words			8	SMALL OUTLINE	SOP8,.3				1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		HARDWARE	R-PDSO-G8		3.6 V	2.16 mm		20 MHz	5.24 mm			SPI	2097152 bit	2.7 V	ORGANIZED AS 1024 PAGES OF 264 BYTES EACH	e0			NOR TYPE	.00001 Amp	5.29 mm	2.7
AT45DB041D-MU	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	17 mA	4194304 words	3	3/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	66 MHz	5 mm	Not Qualified		SPI	4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3			NOR TYPE	.00001 Amp	6 mm	2.7
M25P10-AVMB6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel		DUAL			R-PDSO-N8		3.6 V	.6 mm		50 MHz	2 mm				1048576 bit	2.7 V			30	260	NOR TYPE		3 mm	2.7
M25P20-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	3/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI	2097152 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	6 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.