BGA Flash Memory 2,062
| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3 |
8 |
GRID ARRAY |
85 Cel |
32MX8 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
64MX16 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
16MX8 |
16M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e1 |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
16 |
GRID ARRAY |
85 Cel |
16MX16 |
16M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
e0 |
12000 ns |
3 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
64MX16 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
32MX16 |
32M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
e0 |
SLC NAND TYPE |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
64MX8 |
64M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
16MX8 |
16M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
1.8 |
16 |
GRID ARRAY |
85 Cel |
16MX16 |
16M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
268435456 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
16 |
GRID ARRAY |
85 Cel |
64MX16 |
64M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3 |
8 |
GRID ARRAY |
85 Cel |
64MX8 |
64M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
16MX8 |
16M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
8 |
GRID ARRAY |
85 Cel |
128MX8 |
128M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
16 |
GRID ARRAY |
85 Cel |
32MX16 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
128MX8 |
128M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e1 |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
32MX16 |
32M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
8MX16 |
8M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
8 |
GRID ARRAY |
85 Cel |
128MX8 |
128M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3 |
8 |
GRID ARRAY |
85 Cel |
64MX8 |
64M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3 |
16 |
GRID ARRAY |
70 Cel |
64MX16 |
64M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
64MX8 |
64M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
e0 |
SLC NAND TYPE |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
8 |
GRID ARRAY |
85 Cel |
16MX8 |
16M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
134217728 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
32MX16 |
32M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
e0 |
SLC NAND TYPE |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
64MX8 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
e0 |
SLC NAND TYPE |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
1.8 |
16 |
GRID ARRAY |
85 Cel |
8MX16 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e1 |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
8 |
GRID ARRAY |
70 Cel |
16MX8 |
16M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
134217728 bit |
2.7 V |
e0 |
12000 ns |
3 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
67108864 words |
3 |
16 |
GRID ARRAY |
70 Cel |
64MX16 |
64M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3 |
16 |
GRID ARRAY |
85 Cel |
32MX16 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
12000 ns |
3 |
||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
16MX16 |
16M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
268435456 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
16 |
GRID ARRAY |
70 Cel |
16MX16 |
16M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3 |
8 |
GRID ARRAY |
85 Cel |
32MX8 |
32M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
16 |
GRID ARRAY |
85 Cel |
16MX16 |
16M |
-40 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3 |
16 |
GRID ARRAY |
85 Cel |
32MX16 |
32M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
536870912 bit |
2.7 V |
e0 |
SLC NAND TYPE |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
8MX16 |
8M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
1.8 |
16 |
GRID ARRAY |
85 Cel |
8MX16 |
8M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
32MX8 |
32M |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
268435456 bit |
1.65 V |
e0 |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
3 |
8 |
GRID ARRAY |
70 Cel |
32MX8 |
32M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
268435456 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
33554432 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
32MX16 |
32M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
536870912 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
15000 ns |
1.8 |
||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16777216 words |
3 |
8 |
GRID ARRAY |
70 Cel |
16MX8 |
16M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
134217728 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
1.8 |
16 |
GRID ARRAY |
70 Cel |
8MX16 |
8M |
0 Cel |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
134217728 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
8 |
GRID ARRAY |
85 Cel |
128MX8 |
128M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
3.6 V |
Not Qualified |
1073741824 bit |
2.7 V |
e1 |
12000 ns |
3 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
COMMERCIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
70 Cel |
128MX8 |
128M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e1 |
15000 ns |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
128MX8 |
128M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
1.95 V |
Not Qualified |
1073741824 bit |
1.65 V |
e1 |
15000 ns |
1.8 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.