BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL128S10DHVV13	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	80 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	105 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified			134217728 bit		16	e1	30	260	NOR TYPE	.0002 Amp		YES	100 ns		YES
S29GL256S90FAI013	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY					85 Cel	256MX1	256M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V							268435456 bit	2.7 V					NOR TYPE				90 ns	3
S29GL512S11FAI010	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			536870912 words	3			1	GRID ARRAY					85 Cel	512MX1	512M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V							536870912 bit	2.7 V										3
S29GL01GS11FAI010	Infineon Technologies	FLASH	INDUSTRIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY					85 Cel	128MX8	128M	-40 Cel					BOTTOM	X-PBGA-B		3.6 V							1073741824 bit	2.7 V									110 ns	3
AMD29DL161DT70PCI	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	70 ns		YES
S29GL128S10DHVV20	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	80 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	105 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified			134217728 bit		16	e1	30	260	NOR TYPE	.0002 Amp		YES	100 ns		YES
AMD29DL161DT120PCI	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	120 ns		YES
S26HL02GTFGBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HL02GTFGBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HS02GTFPBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHA033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					85 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HL02GTFGBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HS02GTFPBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHM033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					125 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HL02GTFGBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HS02GTFPBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHV030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					105 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHI033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					85 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HL02GTFGBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S29GL128S10DHVV10	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	80 mA	8388608 words		YES	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	105 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified			134217728 bit		16	e1	30	260	NOR TYPE	.0002 Amp		YES	100 ns		YES
S29GL512S11FAI013	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			536870912 words	3			1	GRID ARRAY					85 Cel	512MX1	512M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V							536870912 bit	2.7 V										3
S26HL02GTFGBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	3.6 V		133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HS02GTFPBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHV033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					105 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HS02GTFPBHM053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S26HS02GTFPBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					105 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHM030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					125 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HS02GTFPBHM050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY					105 Cel	1GX1	1G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S28HS01GTGZBHB033	Infineon Technologies	FLASH		24	BGA		PLASTIC/EPOXY		1	CMOS	AEC-Q100			SYNCHRONOUS			1073741824 words	1.8				GRID ARRAY					105 Cel	1GX1		-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		200 MHz			SPI		1073741824 bit	1.7 V					NOR TYPE					1.8
S26HS02GTFPBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY					125 Cel	2GX1	2G	-40 Cel					BOTTOM	S-PBGA-B24	3	2 V		166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8
S29GL256S90FAI020	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY					85 Cel	256MX1	256M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V							268435456 bit	2.7 V					NOR TYPE				90 ns	3
AMD29DL161DT90PCI	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	90 ns		YES
S29GL256S90FAI010	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			268435456 words	3			1	GRID ARRAY					85 Cel	256MX1	256M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V							268435456 bit	2.7 V					NOR TYPE				90 ns	3
S70GL02GS120FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	120 ns		YES
S70GL02GS110FHI023	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	110 ns		YES
S70GL02GS110FHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	110 ns		YES
S70GL02GS120FHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	120 ns		YES
S70GL02GS110FHI013	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	110 ns		YES
S70GL02GS120FHIV23	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	120 ns		YES
S70GL02GS120FHIV13	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	120 ns		YES
S70GL02GS110FHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	110 ns		YES
AM29DL640G120PCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	BOTTOM	S-PBGA-B64	3					Not Qualified		BOTTOM/TOP	67108864 bit			e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
S26KL256SDABHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY					85 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B24		3.6 V							268435456 bit	2.7 V									96 ns	3
S26KS256SDPBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY					105 Cel	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B24		1.95 V							268435456 bit	1.7 V									96 ns	1.8
S29PL064J70BFW13	Infineon Technologies	FLASH	OTHER	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY				.8 mm	85 Cel	4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56		3.6 V	1 mm		7.95 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		e1			NOR TYPE		8.95 mm		70 ns	3
S26KL512SDABHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY					105 Cel	64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B24	3	3.6 V							536870912 bit	2.7 V									96 ns	3
S26KL128SDABHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY					105 Cel	16MX8	16M	-40 Cel					BOTTOM	R-PBGA-B24		3.6 V							134217728 bit	2.7 V									96 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.