BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FS064SAGBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	125 Cel	NO	8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V					.00009 Amp	8 mm			1.8
S29AL008J70BFA010	Infineon Technologies	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8				85 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V								8388608 bit	2.7 V								70 ns	3
AM29LV640DU121RPCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K	30 mA	4194304 words		YES	2/2.5,3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	125 Cel		4MX16	4M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			67108864 bit					NOR TYPE	.000005 Amp		YES	120 ns		YES
AM29DL640G120PCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		4MX16	4M	-55 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit		e0		260	NOR TYPE	.000005 Amp		YES	120 ns		YES
S26KL256SDABHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY						85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								268435456 bit	2.7 V								96 ns	3
S26KS256SDPBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY						105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								268435456 bit	1.7 V								96 ns	1.8
S29PL064J70BFW13	Infineon Technologies	FLASH	OTHER	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY					.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7.95 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	e1			NOR TYPE		8.95 mm		70 ns	3
S26KL512SDABHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY						105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								536870912 bit	2.7 V								96 ns	3
S26KL128SDABHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY						105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								134217728 bit	2.7 V								96 ns	3
S26KS512SDPBHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								536870912 bit	1.7 V								96 ns	1.8
S29PL064J70BFI13	Infineon Technologies	FLASH	INDUSTRIAL	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY					.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7.95 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	e1			NOR TYPE		8.95 mm		70 ns	3
AM29DL640G70PCIN	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit		e0		260	NOR TYPE	.000005 Amp		YES	70 ns		YES
S26KS128SDPBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								134217728 bit	1.7 V								96 ns	1.8
S26KL256SDABHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY						105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								268435456 bit	2.7 V								96 ns	3
S26KS512SDPBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								536870912 bit	1.7 V								96 ns	1.8
S26KL512SDABHN020	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY						125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								536870912 bit	2.7 V								96 ns	3
S29PL032J65BFI13	Infineon Technologies	FLASH	INDUSTRIAL	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY					.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7.95 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	e1			NOR TYPE		8.95 mm		65 ns	3
S29AL008J70BFM023	Infineon Technologies	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8				125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V								8388608 bit	2.7 V								70 ns	3
S26KS256SDPBHN020	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY						125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V								268435456 bit	1.7 V								96 ns	1.8
S25FL032P0XBFI003	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			38 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	80 MHz		Not Qualified	SPI		33554432 bit					NOR TYPE	.00001 Amp
S26KL256SDABHN020	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY						125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								268435456 bit	2.7 V								96 ns	3
AM29DL640G90PCIN	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM		S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit		e0		260	NOR TYPE	.000005 Amp		YES	90 ns		YES
S26KL512SDABHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY						105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								536870912 bit	2.7 V								96 ns	3
S26KS512SDPBHN020	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V								536870912 bit	1.7 V								96 ns	1.8
S26KS128SDPBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								134217728 bit	1.7 V								96 ns	1.8
S26KL512SDABHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY						125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								536870912 bit	2.7 V								96 ns	3
S29PL032J70BFW13	Infineon Technologies	FLASH	OTHER	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY					.8 mm	85 Cel		2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7.95 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	e1			NOR TYPE		8.95 mm		70 ns	3
S29AL008J70BFM010	Infineon Technologies	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8				125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V								8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED					70 ns	3
S26KS128SDPBHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								134217728 bit	1.7 V								96 ns	1.8
S29AL008J70BFM013	Infineon Technologies	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8				125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V								8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED					70 ns	3
S26KL128SDABHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY						85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								134217728 bit	2.7 V								96 ns	3
S26KL128SDABHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY						105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								134217728 bit	2.7 V								96 ns	3
S26KL256SDABHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY						105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V								268435456 bit	2.7 V								96 ns	3
S26KL256SDABHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY						125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								268435456 bit	2.7 V								96 ns	3
S26KS256SDPBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY						85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								268435456 bit	1.7 V								96 ns	1.8
S26KL128SDABHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY						85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								134217728 bit	2.7 V								96 ns	3
S26KS128SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V								134217728 bit	1.7 V								96 ns	1.8
S26KS256SDPBHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY						125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								268435456 bit	1.7 V								96 ns	1.8
S25HS02GTFABHV150	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V				NOR TYPE					1.8
S25HS02GTFABHV153	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM		S-PBGA-B24	3	2 V			166 MHz			SPI		2147483648 bit	1.7 V				NOR TYPE					1.8
S26KL128SDABHN023	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY						125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V								134217728 bit	2.7 V								96 ns	3
S25FS064SAGBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	85 Cel	NO	8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V					.00009 Amp	8 mm			1.8
S26KS512SDPBHV023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V								536870912 bit	1.7 V								96 ns	1.8
S29PL032J65BFW13	Infineon Technologies	FLASH	OTHER	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY					.8 mm	85 Cel		2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		3.6 V	1 mm			7.95 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	e1			NOR TYPE		8.95 mm		65 ns	3
AM29LV640DU120RPCEN	Infineon Technologies	FLASH	MILITARY	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K	30 mA	4194304 words		YES	3.3,3/5	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	125 Cel		4MX16	4M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			67108864 bit					NOR TYPE	.000005 Amp		YES	120 ns		YES
S25FS064SAGBHA023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	85 Cel	NO	8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V					.00009 Amp	8 mm			1.8
S25FL032P0XBFI000	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			38 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	80 MHz		Not Qualified	SPI		33554432 bit					NOR TYPE	.00001 Amp
S25FS064SAGBHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	8388608 words	1.8			8	GRID ARRAY	BGA24,5X5,40	1		20	1 mm	125 Cel	NO	8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		133 MHz	6 mm		SPI		67108864 bit	1.7 V					.00009 Amp	8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.