BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F800C3TA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
RC28F160C3BC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
M58WR064HU7AZA6E	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B80				Not Qualified	TOP	67108864 bit			4			NOR TYPE	.00001 Amp		YES	70 ns		NO
M29DW127G70NF6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F160C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
RC28F00BM29EWL	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	31 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	2147483648 bit			16/32			NOR TYPE	.00048 Amp		YES	100 ns		YES
RC28F128P33BF60B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	134217728 bit			8			NOR TYPE	.002 Amp		YES	60 ns		NO
M29W128GH6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW128F6AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW127G70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F800C3BD70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
RC28F320J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		33554432 bit			4/8	30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29W128GSH70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F320C3BA100	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.000025 Amp	13 mm	YES	100 ns	3	NO
M29DW256G70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	70 ns	3	YES
M29W160EB80ZS3ST	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	16777216 bit						NOR TYPE	.0001 Amp		YES	80 ns		YES
RC28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			4/8	30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F160C3TC80	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	80 ns	3	NO
RC28F320C3BC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
M29DW127G60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	60 ns		YES
M58BW016FB8ZA3T	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	16777216 bit						NOR TYPE	.000005 Amp		YES	80 ns		NO
RC28F160C3TC70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
M29DW127G70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F128J3D-75	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			4/8			NOR TYPE	.00012 Amp		YES	75 ns		NO
M58WR064HL7AZA6U	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	67108864 bit			4			NOR TYPE	.00001 Amp		YES	70 ns		NO
RC28F320C3TC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
RC28F256J3D95A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	16777216 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		268435456 bit			4/8	30	235	NOR TYPE	.00012 Amp		YES			NO
RC28F160C3BC70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
RC28F128P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	134217728 bit			4			NOR TYPE	.000075 Amp		YES	85 ns		NO
RC28F160C3BA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES		BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
M29DW256G70ZA1E	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	70 ns	3	YES
RC28F256J3D-95	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	16777216 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		268435456 bit			4/8			NOR TYPE	.00012 Amp		YES			NO
M29DW127G60ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F640P30B85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	67108864 bit			4			NOR TYPE	.000035 Amp		YES	85 ns		NO
M29DW256G70ZS1E	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	70 ns	3	YES
RC28F256P30B85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	268435456 bit			4			NOR TYPE	.000115 Amp		YES	85 ns		NO
M29DW127G70NF6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
M29DW128F6AZA6T	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW256G70ZA1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	70 ns	3	YES
M29W128GSH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16			NOR TYPE	.0001 Amp		YES	70 ns		YES
M29DW256G60ZS1E	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F320J3D75E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		33554432 bit			4/8	30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F256J3D95B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	16777216 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified		268435456 bit			4/8	30	235	NOR TYPE	.00012 Amp		YES			NO
RC28F640P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES		BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit			8			NOR TYPE	.000055 Amp		YES	65 ns		NO
RC28F256P30B85D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES		BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	268435456 bit			4			NOR TYPE	.000115 Amp		YES	85 ns		NO
M29DW256G60ZA1E	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW256G60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES	YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	268435456 bit						NOR TYPE	.0001 Amp		YES	60 ns		YES
M58BW016FT8ZA3T	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES		BOTTOM	R-PBGA-B80				Not Qualified	TOP	16777216 bit						NOR TYPE	.000005 Amp		YES	80 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.