BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT25QU256ABA8E55-0SIT	Micron Technology	FLASH	INDUSTRIAL	23	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY		1				85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B23	2 V			166 MHz					268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED						1.8
M25PX64SOVZM6TPB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX32SVZM6E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX32STVZM6FB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
PC28F128P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
M25PX64-VZM3TPBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16SOVZM3EB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX16STVZM6TG	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
MT28F640J3FFS-12	Micron Technology	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3,3.3/5	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	0 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit			4/8	e0			NOR TYPE	.00012 Amp		YES	120 ns		NO
M25PX32-VZM6E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		15 mA	33554432 words			3/3.3	1	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit				e1			NOR TYPE	.00001 Amp				2.7
N25Q128A21T1240E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	16777216 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit							NOR TYPE	.00001 Amp
M25PX64SVZM3PBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64STVZM6P	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
N25Q064A33E12D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
N25Q064A13E1241F	Micron Technology	FLASH		24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			67108864 words				1	GRID ARRAY					1 mm			64MX1	64M				TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V			e1			NOR TYPE		8 mm			2.7
M25PX64SVZM6TG	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
PC28F320J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
N25Q128A813E12A0F	Micron Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words				1	GRID ARRAY						85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B8	3.6 V			108 MHz					134217728 bit	2.7 V						NOR TYPE					3
M25PX16SVZM3PB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
MT28F640J3FFS-12ET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3,3.3/5	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit			4/8	e0			NOR TYPE	.00012 Amp		YES	120 ns		NO
M25PX32SVZM3FBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
PC28F256P30B85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
N25Q064A33E14D0G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
M25PX16SVZM3EB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32SVZM3FA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
N25Q064A13E14DFG	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3			8	GRID ARRAY	BGA24,4X6,40	1			1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24	3.6 V	1.4 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		67108864 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm			3
PC28F128P33B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000155 Amp		YES	85 ns		NO
MT29F256G08AUCABH3-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel				0 Cel	32K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
PC28F640J3D-75	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	54 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
N25Q064A33E14DFE	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
M25PX32SOVZM3EA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX16STVZM6G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX64SVZM3GBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
PC28F256J3D95A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	16777216 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			268435456 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES			NO
N25Q064A13E14D0F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
N25Q064A13E14D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
MT28F320J3FK-11MET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8	e0			NOR TYPE	.00012 Amp		YES	110 ns		NO
MT29F256G08AUCABH3-10Z	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	1M	50 mA	34359738368 words	3.3	YES		8	GRID ARRAY	BGA100,10X17,40				1 mm	70 Cel	NO	32GX8	32G	0 Cel	32K			YES	BOTTOM		R-PBGA-B100	3.6 V	1.65 mm			12 mm				274877906944 bit	2.7 V	SEATED HGT_CALCULATED	8K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm		20 ns	3.3
M25PX64SVZM3PA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16-VZM3FB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32SOVZM6EB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX64STVZM3PBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
MT29F128G08AKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel				0 Cel	32K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M25PX64SOVZM3GBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel		8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
MT28F640J3FK-115ET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit			4/8	e0			NOR TYPE	.00012 Amp		YES	115 ns		NO
M25PX16SOVZM6PBA	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32SOVZM6F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.