BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q064A33E14DFF	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
M25PX64-VZM6TGB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64SVZM3TGBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64STVZM3TGA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
N25Q064A13E14DFF	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3			8	GRID ARRAY	BGA24,4X6,40	1			1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24	3.6 V	1.4 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		67108864 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm			3
M25PX64STVZM3TPA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64STVZM6GB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64SVZM3TPA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16SOVZM6GBA	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
PC28F128J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
PC28F128P33TF60B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3,3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	134217728 bit			8				NOR TYPE	.002 Amp		YES	60 ns		NO
MTFC16GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm				137438953472 bit	2.7 V						NAND TYPE		13 mm
M25PX64-VZM3GA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16STVZM6P	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
PC28F128J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
PC28F256P30B85D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
MT28F644W18FE-608BET	Micron Technology	FLASH	INDUSTRIAL	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY						85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56	1.95 V					Not Qualified		BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE				60 ns	1.8
M25PX16SVZM6P	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32-VZM6EB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX64SVZM6TPB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
MT29F64G08AKCCBH2-10Z:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	8589934592 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel	8GX8	8G	0 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			68719476736 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
M25PX32STVZM3FA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX16SOVZM3PB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
PC28F128P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
MT29F128G08AKCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel	16GX8	16G	0 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M25PX16SOVZM6TG	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
N25Q128A11B1240E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	16777216 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit							NOR TYPE	.00001 Amp
PC28F640P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
MT29F64G08AECABH1-10ITZ	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	1M	50 mA	8589934592 words	3.3	YES		8	GRID ARRAY	BGA100,10X17,40				1 mm	85 Cel	8GX8	8G	-40 Cel	8K			YES	BOTTOM		R-PBGA-B100	3.6 V	1.25 mm			12 mm				68719476736 bit	2.7 V	SEATED HGT_CALCULATED	8K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm		20 ns	3.3
PC28F320J3F75E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
M25PX64-VZM3GBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64-VZM3PA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64SVZM6G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64STVZM3GA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64-VZM6GB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16-VZM3PB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
N25Q032A13E1241F	Micron Technology	FLASH		24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words				1	GRID ARRAY							32MX1	32M				TIN SILVER COPPER		BOTTOM		R-PBGA-B24				108 MHz					33554432 bit				e1			NOR TYPE					2.7
N25Q064A33E14D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
N25Q064A13E12D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
N25Q128A11T1240F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	16777216 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit							NOR TYPE	.00001 Amp
M25PX16-VZM3GB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32STVZM6F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
MT29F128G08AMCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel	16GX8	16G	0 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M25PX16SVZM6TP	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
MT29F64G08AECABH1-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel	8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified			68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M25PX16STVZM6GBA	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX32-VZM3EBA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX16-VZM6GBA	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.