BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F256P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
M29DW256G60ZS1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F800C3BA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
M29DW127G60NF6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F640P30T85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
PC48F4400P0VB00D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
M29DW256G60ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F256P33BFB	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	16777216 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	268435456 bit							NOR TYPE	.00021 Amp		YES	95 ns		NO
RC28F160C3BC80	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	80 ns	3	NO
M29W128GSL70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M58WR064HU7AZA6F	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B80						Not Qualified		TOP	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
RC28F800C3BA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
PC48F4400P0VB00B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
PC48F4400P0VB0EB	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
M29W128GSL70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F800C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
RC28F320J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F160C3BA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
M29DW256G60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	70 Cel	16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
M29W160EB80ZS3SE	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
RC28F640P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
RC28F640J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			67108864 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29DW127G60NF6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M58BW016FT8ZA3F	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B80						Not Qualified		TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
M58WR064HL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B80						Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
M29W160EB80ZS3SF	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W128GL70ZA6DE	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M25PX64SVZM6GB	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16STVZM3EB	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
N25Q064A33E12D0G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
M25PX16SOVZM6P	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
M25PX64-VZM6G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX64SVZM3TGA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
N25Q064A13E14D0G	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.0001 Amp
M25PX64SOVZM3TGA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		67108864 bit							NOR TYPE	.00001 Amp
M25PX16-VZM6E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
N25Q128A21T1240F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	16777216 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit							NOR TYPE	.00001 Amp
MT28F644W18FE-608TET	Micron Technology	FLASH	INDUSTRIAL	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY						85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56	1.95 V					Not Qualified		TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE				60 ns	1.8
M25PX32SOVZM6E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
M25PX32-VZM3FA	Micron Technology	FLASH	AUTOMOTIVE	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
PC28F320J3D75E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
MTFC16GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm				137438953472 bit	2.7 V						NOR TYPE		18 mm
M25PX32SVZM6F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	4194304 words			3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	4MX8	4M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		33554432 bit							NOR TYPE	.00001 Amp
PC28F256P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
M25PX16STVZM6F	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			15 mA	2097152 words			2.5/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24			100000 Write/Erase Cycles	75 MHz		Not Qualified	SPI		16777216 bit							NOR TYPE	.00001 Amp
PC28F128P30TF65B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	134217728 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
MT28F320J3FK-11ET	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64						Not Qualified			33554432 bit			4/8	e0			NOR TYPE	.00012 Amp		YES	110 ns		NO
MT29F128G08AMCABH2-10ITZ:AT	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	1M	50 mA	17179869184 words	3.3	YES		8	GRID ARRAY	BGA100,10X17,40				1 mm	85 Cel	16GX8	16G	-40 Cel	16K			YES	BOTTOM		R-PBGA-B100	3.6 V	1.45 mm			12 mm				137438953472 bit	2.7 V	SEATED HGT_CALCULATED	8K				MLC NAND TYPE	.00005 Amp	18 mm		20 ns	3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.