BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29DL640G120PCIN	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	45 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN LEAD	YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit				e0	260	NOR TYPE	.000005 Amp		YES	120 ns		YES
EPCQL256F24IN	Infineon Technologies	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8			8	GRID ARRAY	BGA24,5X5,39			1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	100 MHz	6 mm		SPI		268435456 bit	1.7 V					NOR TYPE	.00001 Amp	8 mm			1.8
S26KL512SDABHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY					85 Cel		64MX8	64M	-40 Cel					BOTTOM	R-PBGA-B24		3.6 V								536870912 bit	2.7 V									96 ns	3
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V								274877906944 bit	2.7 V										2.7
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY					85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V								137438953472 bit	2.7 V										2.7
THGBMHG9C8LBAB8	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			68719476736 words				8	GRID ARRAY		4			105 Cel		64GX8	64G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V								549755813888 bit	2.7 V	ALSO ORGANISED AS 512GX1									2.7
THGBMHG8C4LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY		4			105 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V								274877906944 bit	2.7 V	ALSO ORGANISED AS 256GX1									2.7
THGBMHG7C2LBAB7	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY		4			105 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V								137438953472 bit	2.7 V	ALSO ORGANISED AS 128GX1									2.7
THGBF7T0L8LBATA	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			137438953472 words				8	GRID ARRAY					85 Cel		128GX8	128G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V								1099511627776 bit	2.7 V					MLC NAND TYPE					2.7
THGBF7G9L4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			68719476736 words				8	GRID ARRAY					85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V								549755813888 bit	2.7 V					MLC NAND TYPE					2.7
THGBMHG6C1LBAB6	Toshiba	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	ASYNCHRONOUS			8589934592 words				8	GRID ARRAY		4			105 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153		3.6 V								68719476736 bit	2.7 V	ALSO ORGANISED AS 64GX1									2.7
K8A2815ETB-EC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel		8MX16	8M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						80 ns	1.8
K8A6415ETB-SE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V					Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	260					90 ns	1.8
K8A5615ETA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					70 Cel		16MX16	16M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V					Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				80 ns	1.8
K8A2815ETB-FE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V					Not Qualified			134217728 bit	1.7 V			e1						80 ns	1.8
K8A2815EBB-EE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						80 ns	1.8
K8S2815ETC-SE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V					Not Qualified		TOP	134217728 bit	1.7 V				260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P2915UQB-DI4C0	Samsung	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V					Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
KLMDGAGEAC-B0010	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			68719476736 words	4.5			16	GRID ARRAY							64GX16	64G						BOTTOM	R-PBGA-B			1.4 mm		200 MHz	11.5 mm				1099511627776 bit						MLC NAND TYPE		13 mm			4.5
K8A2815EBB-EE7B	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						90 ns	1.8
K8P6415UQB-EE4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	65 ns		YES
KLMAG2GEAC-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			17179869184 words	5			8	GRID ARRAY							16GX8	16G						BOTTOM	R-PBGA-B			1 mm		200 MHz	11.5 mm				137438953472 bit		ALSO ORGANISED AS 64Gbx2				MLC NAND TYPE		13 mm			5
K8P6415UQB-EE4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A2815ETB-EE7B	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						90 ns	1.8
K8A5615EBA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					70 Cel		16MX16	16M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V					Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				80 ns	1.8
K8P3215UQB-EE4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A3215EBE-FC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					70 Cel		2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e0	240					80 ns	1.8
K8P3315UQB-EE4D0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64							Not Qualified		BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A2815EBB-FE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V					Not Qualified			134217728 bit	1.7 V			e1						80 ns	1.8
K8A3215EBE-FE7B	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					85 Cel		2MX16	2M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e0	240					90 ns	1.8
K8P2915UQB-DI4B0	Samsung	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V					Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	60 ns	2.7	YES
K8A3215EBE-FE7C	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					85 Cel		2MX16	2M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e0	240					80 ns	1.8
K8P3215UQB-EE4AT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8A2815EBB-FC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel		8MX16	8M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V					Not Qualified			134217728 bit	1.7 V			e1						80 ns	1.8
K8P3315UQB-EE4B0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64							Not Qualified		BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A3215EBE-DE7B	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					85 Cel		2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e1	260					90 ns	1.8
K8A6415ETB-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					70 Cel		4MX16	4M	0 Cel			TIN LEAD		BOTTOM	X-PBGA-B	3	1.95 V					Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0	240					90 ns	1.8
K8P3215UQB-EC4DT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A6415ETB-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V					Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	260					80 ns	1.8
K8S2815EBC-SC7E0	Samsung	FLASH	COMMERCIAL	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V					Not Qualified		BOTTOM	134217728 bit	1.7 V				260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8A3215ETE-DC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e1	260					90 ns	1.8
K8A3215ETE-FE7C	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					85 Cel		2MX16	2M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V					Not Qualified			33554432 bit	1.7 V			e0	240					80 ns	1.8
K8S2815EBC-FE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	1	1.95 V					Not Qualified		BOTTOM	134217728 bit	1.7 V					NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P6415UQB-EE4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified		BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A2815ETB-EC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel		8MX16	8M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						90 ns	1.8
K8A2815EBB-EC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel		8MX16	8M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified			134217728 bit	1.7 V			e0						80 ns	1.8
K8A6415ETB-DC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					70 Cel		4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V					Not Qualified			67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	260					90 ns	1.8
K8A5615EBA-DC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					70 Cel		16MX16	16M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V					Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				90 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.