BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P6415UQB-EC4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P2915UQB-DC4A0	Samsung	FLASH	COMMERCIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	55 ns	2.7	YES
K8P2915UQB-DE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8A3215EBE-DC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e1	260					90 ns	1.8
K8S2815ETC-FE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	1	1.95 V				Not Qualified	TOP	134217728 bit	1.7 V					NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P3215UQB-EI4DT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P2915UQB-DC4C0	Samsung	FLASH	COMMERCIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8P6415UQB-EE4C	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P6415UQB-EI4D	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P6415UQB-EI4C	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A3215ETE-FE7B	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				85 Cel	2MX16	2M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e0	240					90 ns	1.8
K8P2915UQB-DI4D0	Samsung	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
K8P2915UQB-DE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	60 ns	2.7	YES
K8P6415UQB-EI4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S2815EBC-FC7E0	Samsung	FLASH	COMMERCIAL	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	1	1.95 V				Not Qualified	BOTTOM	134217728 bit	1.7 V					NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P3315UQB-EC4D0	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P3215UQB-EE4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A3215EBE-DE7C	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e1	260					80 ns	1.8
KLMAG2WEMB-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			17179869184 words	5			8	GRID ARRAY					16GX8	16G						BOTTOM	R-PBGA-B			.8 mm	200 MHz	11.5 mm			137438953472 bit		ALSO ORGANISED AS 64Gbx2				MLC NAND TYPE		13 mm			5
K8P3315UQB-EI4DT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A6415ETB-SE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY				85 Cel	4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V				Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	260					80 ns	1.8
K8P3315UQB-EE4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S2815ETC-DC7E0	Samsung	FLASH	COMMERCIAL	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20	Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V				Not Qualified	TOP	134217728 bit	1.7 V				260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P6415UQB-EC4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A5615EBA-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				70 Cel	16MX16	16M	0 Cel			TIN LEAD		BOTTOM	X-PBGA-B		1.95 V				Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE				90 ns	1.8
K8P3215UQB-EI4BT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8	e1	260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P5615UQA-DC4D0	Samsung	FLASH	COMMERCIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY				70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B84		3.6 V				Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					NOR TYPE				70 ns	2.7
K8A5615ETA-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				90 ns	1.8
K8P6415UQB-EC4B	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A5615EBA-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				80 ns	1.8
K8P3315UQB-EC4DT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A5615EBA-FE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN LEAD		BOTTOM	X-PBGA-B		1.95 V				Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE				90 ns	1.8
K8A3215EBE-FC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				70 Cel	2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e0	240					90 ns	1.8
K8P3315UQB-EC4BT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A5615EBA-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN LEAD		BOTTOM	X-PBGA-B		1.95 V				Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE				80 ns	1.8
K8A6415ETB-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY				85 Cel	4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V				Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	260					90 ns	1.8
K8P2915UQB-DI4A0	Samsung	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V				Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		260	NOR TYPE	.00003 Amp		YES	55 ns	2.7	YES
KLMCG8GEAC-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			68719476736 words	5			8	GRID ARRAY					64GX8	64G						BOTTOM	R-PBGA-B			1.2 mm	200 MHz	11.5 mm			549755813888 bit						MLC NAND TYPE		13 mm			5
K8P3315UQB-EE4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P3215UQB-EC4CT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815ETB-FE7B	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY				85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V				Not Qualified		134217728 bit	1.7 V			e1						90 ns	1.8
K8P6415UQB-EI4B	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P6415UQB-EC4C	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A6415ETB-FC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY				70 Cel	4MX16	4M	0 Cel			TIN LEAD		BOTTOM	X-PBGA-B	3	1.95 V				Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0	240					80 ns	1.8
K8A5615EBA-DE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE				90 ns	1.8
K8A5615ETA-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY				85 Cel	16MX16	16M	-25 Cel			TIN LEAD		BOTTOM	X-PBGA-B		1.95 V				Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE				80 ns	1.8
K8A2815EBB-FE7B	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY				85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V				Not Qualified		134217728 bit	1.7 V			e1						90 ns	1.8
K8A3215ETE-FC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				70 Cel	2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e0	240					90 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.