BGA Flash Memory 2,062

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8A6415ETB-FE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					85 Cel	4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	X-PBGA-B	3	1.95 V				Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		240					80 ns	1.8
K8P3315UQB-EI4CT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A3215ETE-FC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					70 Cel	2MX16	2M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e0		240					80 ns	1.8
K8P5615UQA-DI4D0	Samsung	FLASH	INDUSTRIAL	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V				Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8P6415UQB-EC4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A3215EBE-DC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY					70 Cel	2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V				Not Qualified		33554432 bit	1.7 V			e1		260					80 ns	1.8
K8P3315UQB-EC4CT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8P3315UQB-EI4D0	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P3215UQB-EI4AT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8S2815ETC-DE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V				Not Qualified	TOP	134217728 bit	1.7 V					260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8A5615ETA-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE				80 ns	1.8
K8A2815EBB-EC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel	8MX16	8M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V				Not Qualified		134217728 bit	1.7 V			e0							90 ns	1.8
K8P3315UQB-EC4B0	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P3315UQB-EE4C0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
KLM8G1GEAC-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			8589934592 words	5			8	GRID ARRAY						8GX8	8G						BOTTOM	R-PBGA-B			1 mm	200 MHz	11.5 mm			68719476736 bit		ALSO ORGANISED AS 64Gbx1					MLC NAND TYPE		13 mm			5
KLM8G1WEMB-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			8589934592 words	5			8	GRID ARRAY						8GX8	8G						BOTTOM	R-PBGA-B			.8 mm	200 MHz	11.5 mm			68719476736 bit		ALSO ORGANISED AS 64Gbx1					MLC NAND TYPE		13 mm			5
KLM8G1GESD-B04Q0	Samsung	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			8589934592 words				8	GRID ARRAY					105 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153		1.95 V						68719476736 bit	1.7 V	IT ALSO OPERATES AT 2.7V TO 3.6V					MLC NAND TYPE					1.8
KLM8G1GESD-B04P0	Samsung	FLASH	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS			8589934592 words				8	GRID ARRAY					85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B153		1.95 V						68719476736 bit	1.7 V	IT ALSO OPERATES AT 2.7V TO 3.6V					MLC NAND TYPE					1.8
M29W128GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
RC28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F160C3TC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
RC28F640P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
M29W160EB80ZS3S	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
RC28F256P30T85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM	S-PBGA-B64						Not Qualified	TOP	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
RC28F320J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29W128GL6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F800C3TD70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
RC28F320J3D-75	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		33554432 bit			4/8				NOR TYPE	.00012 Amp		YES	75 ns		NO
M29DW256G60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F320C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
M29W128GSL70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29DW128F6AZA6	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F320J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F320C3BA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
RC28F640J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		67108864 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F640P30BF65B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
M29DW256G60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
M29DW128F6AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F640J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		67108864 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
M58WR064HU7AZA6U	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B80						Not Qualified	TOP	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
M58WR064HL7AZA6F	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B80						Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
RC28F160C3TA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
RC28F256P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM	S-PBGA-B64						Not Qualified	TOP	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
M29W128GSH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M58BW016FB8ZA3F	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80						Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
RC28F320C3TA100	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	100 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.