TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P5616UZB-EC4E0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					NOR TYPE		13 mm		80 ns	3
K8P6415UQB-EC4D0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P5516UZB-EE4E0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-25 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V	8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	13 mm	YES	80 ns	3	YES
K8P3215UQB-EE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P2815UQB-EC4C0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel	8MX16	8M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V					NOR TYPE		13 mm		65 ns	2.7
K8P3215UQB-EC4D0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P3215UQB-EI4C0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P2815UQB-DE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P3215UQB-EE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2815UQB-EI4C0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P5616UZB-EI4E0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					NOR TYPE		13 mm		80 ns	3
K8P2815UQB-EC4D0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel	8MX16	8M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V					NOR TYPE		13 mm		70 ns	2.7
K8P6415UQB-EI4D0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P2815UQB-DC4C0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P3215UQB-EE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	55 ns	2.7	YES
K8P6415UQB-EE4D0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P2716UZC-JI4E0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	80 ns	3	YES
K8P2716UZC-JE4C0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	65 ns	3	YES
K8P3215UQB-EI4B0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8	e1		260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2815UQB-DI4D0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P2815UQB-EE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P2815UQB-EE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2815UQB-DI4C0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P2716UZC-JI4C0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	65 ns	3	YES
K8P2716UZC-JI4D0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	70 ns	3	YES
K8P5516UZB-EC4E0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		268435456 bit	2.7 V							13 mm		80 ns	3
K8P3215UQB-EE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P5516UZB-EI4E0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V	8/16	e1		260	NOR TYPE	.00004 Amp	13 mm	YES	80 ns	3	YES
K8P6415UQB-EE4C0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P2716UZC-JE4E0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	80 ns	3	YES
K8P6415UQB-EE4B0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2716UZC-JC4D0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	70 ns	3	YES
K8P2815UQB-DI4B0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2815UQB-EE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P6415UQB-EC4C0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P5616UZB-EE4E0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					NOR TYPE		13 mm		80 ns	3
K8P3215UQB-EI4D0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P6415UQB-EC4B0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	4MX16	4M	0 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2815UQB-DC4B0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P2716UZC-JC4C0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8MX16	8M	0 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	65 ns	3	YES
K8P2815UQB-EI4B0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8	e1		260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P3215UQB-EC4A0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	55 ns	2.7	YES
K8P3215UQB-EI4A0	Samsung	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	55 ns	2.7	YES
K8P6415UQB-EE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		13 mm		55 ns	2.7
K8P2815UQB-DE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P3215UQB-EC4B0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8P6415UQB-EC4A0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		13 mm		55 ns	2.7
K8P2716UZC-JE4D0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified		134217728 bit	2.7 V	8/16			260	NOR TYPE	.00004 Amp	13 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.