TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F640P30BF65	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		13 mm		65 ns	1.8
RC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	134217728 bit	2.3 V		8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.002 Amp	10 mm	YES	17 ns	3	NO
M29W640GT70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
RC28F256P33B85B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16MX16	16M	-40 Cel			TIN LEAD SILVER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		10 mm		85 ns	3
M29W640GL70ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GL7AZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W640GT90ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29W128GH7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified	.00007 ms			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
RC28F640J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Lead/Silver (Sn/Pb/Ag)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
M29W128GL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified	.00007 ms			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GL6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm					67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
RC28F256P33BFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
M29W128GL60ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel	8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F128P33BF60	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm				BOTTOM	134217728 bit	2.3 V						NOR TYPE		10 mm		60 ns	3
M29W128GH60ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W640GH7AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GL60ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel	16MX16	16M	0 Cel	256	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W256GH70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
PC48F4400P0VB0EA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified			BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
M29W640GB70ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F256P30BF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm		52 MHz	10 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
M29W640GH6AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm					67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W640GT6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W256GL7AZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W640GB6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W128GH70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GL60ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
M29W256GL7AZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
RC28F00AP30TF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	4,1023	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			TOP	1073741824 bit	1.7 V		16	e0			NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
RC28F640P33TF60	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm				TOP	67108864 bit	2.3 V			e0	30	235	NOR TYPE		10 mm		60 ns	3
M29W640GB60ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
M29W256GH60ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
RC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
M29W256GH60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W640GH7AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GH90ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
MT28F640J3FS-12	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT35XU02GCBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
N25Q064A41E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					67108864 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q064A33E12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
PC28F640P30BF65	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		13 mm		65 ns	1.8
M25PX32STVZM3EB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm					33554432 bit	2.7 V						NOR TYPE		8 mm			2.7
MT29F128G08CEAAAH2:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
N25Q064A23E14A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q512A21G12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
PC28F512G18AF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	55 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	256	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified				536870912 bit	1.7 V		16	e1			NOR TYPE	.00016 Amp	10 mm	YES	96 ns	1.8	NO
N25Q064A43E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.