TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	8 mm	Not Qualified		TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	235	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
RC28F320J3F75	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	54 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B64	1	3.6 V	1.2 mm	10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC48F4400P0TB0ED	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	536870912 bit	2.3 V	ASYNCHRONOUS READ MODE		e1			NOR TYPE		13 mm		95 ns	2.7
M29W640GL70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W256GL60ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F00AP30BF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	64MX16	64M	-40 Cel			TIN LEAD SILVER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	8 mm	Not Qualified		BOTTOM	1073741824 bit	1.7 V			e0			NOR TYPE		10 mm		100 ns	3
M29W640GT6AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
RC28F640P30B85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm			BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		88 ns	1.8
M29W640GL90ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29W256GL60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W640GH70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W128GH60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F128J3F75F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		75 ns	3
RC48F4400P0TB00	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	33554432 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00039 Amp	10 mm	YES	85 ns	3	NO
RC28F128P30TF65	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel			Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm			TOP	134217728 bit	1.7 V	TOP BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0	30	235	NOR TYPE		13 mm		65 ns	1.8
RC28F128P30T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm			TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		88 ns	1.8
RC28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			67108864 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC48F4400P0VB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
RC28F128P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE ; TOP BOOT	8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
RC48F4400P0TB0E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e0			NOR TYPE	.00042 Amp	13 mm	YES	95 ns	2.7	NO
RC28F256P33B85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000195 Amp	10 mm	YES	85 ns	3	NO
RC28F128P33TF60	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel			Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm			TOP	134217728 bit	2.3 V			e0	30	235	NOR TYPE		10 mm		60 ns	3
M29DW256G7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm				268435456 bit	2.7 V								13 mm		70 ns	3
M29W128GH60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F640P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V		8				NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
M29W256GH7AZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GH70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W128GL60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC48F4400P0TB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm			BOTTOM	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10 mm		85 ns	3
RC28F256P33BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
M29W128GH70ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH7AZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
RC28F256P33T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		TOP	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000195 Amp	10 mm	YES	85 ns	3	NO
RC28F256P33T85B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	16MX16	16M	-40 Cel			Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		TOP	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0	30	235	NOR TYPE		10 mm		85 ns	3
M29W256GL7AZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GL7AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GL70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W640GT60ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
RC28F256P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		TOP	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
M29W128GH7AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
PC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13 mm	YES	88 ns	1.8	NO
M29W256GL70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
RC28F128J3F75G	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm				134217728 bit	2.7 V						NOR TYPE		13 mm		75 ns	3
M29W640GT7AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
RC28F128P33T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000155 Amp	10 mm	YES	85 ns	3	NO
RC28F128P33B85D	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8MX16	8M	-40 Cel			TIN LEAD SILVER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		10 mm		85 ns	3
M29W640GT60ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		60 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.