TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F64G08AMABAH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm			2.7
M25PX16SOVZM3TPB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		2.5/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm			3
N25Q512A33G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					536870912 bit	2.7 V						NOR TYPE		8 mm			3
MT29F16G08ABABAH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	2GX8	2G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					17179869184 bit	2.7 V			e1			SLC NAND TYPE		18 mm			2.7
MT35XU256ABA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT28GU256AAA1EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm					268435456 bit	1.7 V			e1					10 mm		96 ns	1.8
N25Q064A21E12A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					67108864 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q512A33G1240G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					536870912 bit	2.7 V						NOR TYPE		8 mm			3
MT25QU01GABA1E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	1GX1	1G	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		133 MHz	6 mm					1073741824 bit	1.7 V						NOR TYPE		8 mm			1.8
M25PX64-VZM6TP	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	8388608 words	3		3/3.3	8	GRID ARRAY	BGA24,5X5,40		Flash Memories		1 mm	85 Cel	8MX8	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified	15 ms	SPI		67108864 bit	2.7 V			e1			NOR TYPE	.00001 Amp	8 mm			2.7
MT28GU256AAA2EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm					268435456 bit	1.7 V			e1					10 mm		96 ns	1.8
MT29F256G08CKCABH2-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
N25Q512A41G12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
MT29F256G08CMAAAH2ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT28F128J3FS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
M25PX64-VZM3T	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm					67108864 bit	2.7 V								8 mm			2.7
M25PX32SOVZM3T	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm					33554432 bit	2.7 V								8 mm			2.7
PC28F512P30EF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	50 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified				536870912 bit	1.7 V		16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
N25Q032A31E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	32MX1	32M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					33554432 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q256A11E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					268435456 bit	1.7 V								8 mm			1.8
PC28F800C3TD70	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
MT35XL01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT28F256J3BS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	16777216 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				268435456 bit	2.7 V		4/8	e1			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT35XL01GBBA2G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V			e1	30	260			8 mm			3
N25Q256A23E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q128A13E14H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q512A23G1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					536870912 bit	2.7 V						NOR TYPE		8 mm			3
M25PX32-VZM3E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm					33554432 bit	2.7 V						NOR TYPE		8 mm			2.7
N25Q256A73E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					268435456 bit	2.7 V						NOR TYPE		8 mm			3
PC28F512P30TFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
N25Q256A23E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q128A13E14A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q032A11E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1048576 words	1.8			32	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	1MX32	1M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					33554432 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q064A13E1440G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
PC28F512P30BF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			BOTTOM	536870912 bit	1.7 V		16	e1			NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
MT29F64G08CBAABH2-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT35XL512ABA2G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1	30	260			8 mm			3
N25Q512A73G12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					536870912 bit	2.7 V						NOR TYPE		8 mm			3
M25PX16STVZM6TPBA	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		2.5/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm			3
N25Q128A31E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					134217728 bit	1.7 V						NOR TYPE		8 mm			1.8
MT28F640J3FS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	115 ns	2.7	NO
N25Q512A33G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					536870912 bit	2.7 V						NOR TYPE		8 mm			3
N25Q064A31E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					67108864 bit	1.7 V						NOR TYPE		8 mm			1.8
PC28F640P30T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm				TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		88 ns	1.8
MT35XU02GCBA2G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		200 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
N25Q256A31E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm					268435456 bit	1.7 V								8 mm			1.8
N25Q064A33E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT29F256G08CJAABH2-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm					274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.