TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F32G08AECBBH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	4GX8	4G	0 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V		e1			SLC NAND TYPE		18 mm			2.7
MT29F64G08CBAABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	8GX8	8G	0 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
N25Q256A81E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40				1 mm	85 Cel	32MX8	32M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		268435456 bit	1.7 V					NOR TYPE	.00002 Amp	8 mm			1.8
N25Q128A41E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				134217728 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q512A13G1240G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm			3
N25Q128A33E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q064A11E12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q512A31G1240G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V					NOR TYPE		8 mm			1.8
M25PX64SVZM3E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	8MX8	8M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				67108864 bit	2.7 V							8 mm			2.7
M25PX16-VZM3TGB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		2.5/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel	2MX8	2M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm			3
M25PX16SVZM3EPB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	2MX8	2M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				16777216 bit	2.7 V							8 mm			3
MT28F128J3FS-12	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel	8MX16	8M	0 Cel			TIN LEAD SILVER	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		e0			NOR TYPE		13 mm		120 ns	2.7
N25Q512A43G12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm			3
N25Q512A31G12A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V					NOR TYPE		8 mm			1.8
MT29F256G08CJAAAH2IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
M58LT128KSB7ZA6T	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8MX16	8M	-40 Cel				BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm			BOTTOM	134217728 bit	1.7 V					NOR TYPE		13 mm		70 ns	1.8
M25PX16STVZM6TP	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		2.5/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.3 V		e1			NOR TYPE	.00001 Amp	8 mm			3
MT35XU256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	32MX8	32M	-40 Cel			TIN SILVER COPPER	BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		268435456 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8
N25Q256A33E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	256MX1	256M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm			3
N25Q064A13E1247E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V					NOR TYPE		8 mm			2.7
M25PX16STVZM3EPB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	2MX8	2M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				16777216 bit	2.7 V							8 mm			3
N25Q064A43E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q064A23E1440G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT29F256G08CMCABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
N25Q128A33E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q064A13E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q512A83G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	512MX1	512M	-40 Cel			TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V		e1			NOR TYPE	.0005 Amp	8 mm			3
PC28F256P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	16K,64K	51 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES		BOTTOM		R-PBGA-B64	2 V	1.2 mm		52 MHz	10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000115 Amp	13 mm	YES	85 ns	1.8	NO
M25PX16STVZM6EPBA	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	2MX8	2M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				16777216 bit	2.7 V							8 mm			3
N25Q064A13E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	64MX1	64M	-40 Cel			TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		67108864 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q064A41E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	64MX1	64M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q128A11E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				134217728 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q512A23G12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm			3
N25Q256A41E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	256MX1	256M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				268435456 bit	1.7 V							8 mm			1.8
M25PX64STVZM3EB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	8MX8	8M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				67108864 bit	2.7 V							8 mm			2.7
N25Q256A83E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm			3
N25Q128A21E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				134217728 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q032A11E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	32MX1	32M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				33554432 bit	1.7 V		e1			NOR TYPE		8 mm			1.8
M25PX64SOVZM6EBA	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8MX8	8M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				67108864 bit	2.7 V							8 mm			2.7
N25Q256A83E12A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	256MX1	256M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm			3
N25Q512A11G12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V		e1			NOR TYPE		8 mm			1.8
N25Q512A43G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm			3
MT29F128G08CFAAAH2ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
MT29F128G08CFAAAH2IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
N25Q256A31E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				268435456 bit	1.7 V							8 mm			1.8
MT29F128G08CFAABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	16GX8	16G	0 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V		e1			MLC NAND TYPE		18 mm			2.7
N25Q512A31G12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel				BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V					NOR TYPE		8 mm			1.8
N25Q128A33E14A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	128MX1	128M	-40 Cel				BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.