TBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F64G08AJABAH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8589934592 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1			SLC NAND TYPE		18 mm			2.7
M25PX16STVZM6EGBA	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				16777216 bit	2.7 V								8 mm			3
N25Q512A83G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
M25PX16SOVZM3TGB	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	2097152 words		3		2.5/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	125 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	75 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	8 mm			3
MT25QU01GABA1E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		133 MHz	6 mm				1073741824 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q064A23E1440F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q256A43E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
MT29F256G08CJAABH2-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
PC28F320J3F75	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	54 mA	2097152 words		3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e1			NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
MT29F128G08CECABH2-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
N25Q256A81E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40				1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		268435456 bit	1.7 V						NOR TYPE	.00002 Amp	8 mm			1.8
PC28F512P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
M25PX32SVZM3E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				33554432 bit	2.7 V						NOR TYPE		8 mm			2.7
N25Q128A11E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words		1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
MT29F256G08CKCABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
N25Q128A13E14A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT29F128G08CFAABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
N25Q128A43E14A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q064A13E14H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q128A31E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				134217728 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q256A33E1240G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
MT28F640J3FS-12M	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words		3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
PC28F256P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words			NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
N25Q512A11G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q128A13E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q064A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	8388608 words	COMMON	3			8	GRID ARRAY, THIN PROFILE	BGA24, 5X5, 40			20	1 mm	85 Cel	TOTEM POLE	8MX8	8M	-40 Cel		NO			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	8 mm			3
MT29F128G08CECABH2-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
N25Q512A21G12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q032A11E12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX1	32M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				33554432 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q064A31E12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q256A23E1240G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
PC28F256P30BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words		1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1			NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
N25Q256A81E12H0E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		268435456 bit	1.7 V						NOR TYPE	.00002 Amp	8 mm			1.8
N25Q256A73E12A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q256A31E12H0G	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				268435456 bit	1.7 V								8 mm			1.8
MT29F64G08AKCBBH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
N25Q256A43E12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q256A31E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				268435456 bit	1.7 V								8 mm			1.8
M25PX32STVZM6TA	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		75 MHz	6 mm				33554432 bit	2.7 V								8 mm			2.7
PC28F256P30BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words			NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
N25Q256A21E12A0E	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				268435456 bit	1.7 V								8 mm			1.8
MT29F128G08CFAAAH2:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words		3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
PC28F320C3TD70	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words		3	NO		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40				1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
MT35XU256ABA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
N25Q256A83E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V			e1			NOR TYPE		8 mm			3
PC28F00BP33EF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			134217728 words		3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX16	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified			2147483648 bit	2.3 V			e1			NOR TYPE		10 mm		100 ns	3
N25Q064A31E12A0G	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V						NOR TYPE		8 mm			1.8
N25Q064A23E12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.