INDUSTRIAL Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MT25QL02GCBB8E12-0AAT

Micron Technology

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SERIAL

SYNCHRONOUS

85 mA

268435456 words

3

8

GRID ARRAY, THIN PROFILE

BGA24,5X5,40

20

1 mm

105 Cel

3-STATE

256MX8

256M

-40 Cel

TIN SILVER COPPER

BOTTOM

HARDWARE/SOFTWARE

R-PBGA-B24

3.6 V

1.2 mm

100000 Write/Erase Cycles

133 MHz

6 mm

SPI

BOTTOM/TOP

2147483648 bit

2.7 V

e1

30

260

NOR TYPE

.00028 Amp

8 mm

3

MX25L1606EM2I-12G/TR

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

2097152 words

3

8

SMALL OUTLINE

SOP8,.3

1

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

86 MHz

5.23 mm

SPI

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00002 Amp

5.28 mm

3

MX25R1635FZUIH0

Macronix

FLASH

INDUSTRIAL

8

HVBCC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

SERIAL

SYNCHRONOUS

4194304 words

1.8

4

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

2

.5 mm

85 Cel

4MX4

4M

-40 Cel

BOTTOM

R-PBCC-B8

3.6 V

.6 mm

80 MHz

2 mm

16777216 bit

1.65 V

ALSO CONFIGURABLE AS 16MX1

NOT SPECIFIED

NOT SPECIFIED

3 mm

1.8

N25Q128A13EF840F

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

134217728 words

3

3/3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.3

Flash Memories

20

1.27 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

108 MHz

6 mm

Not Qualified

SPI

134217728 bit

2.7 V

30

260

NOR TYPE

.0001 Amp

8 mm

3

SST39SF010A-70-4I-WHE

Microchip Technology

FLASH

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K

35 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.56,20

Flash Memories

100

.5 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

32

YES

MATTE TIN

DUAL

1

R-PDSO-G32

3

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

e3

260

NOR TYPE

.0001 Amp

12.4 mm

70 ns

5

YES

W25Q128JWPIM

Winbond Electronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

16777216 words

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

20

1.27 mm

85 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1.95 V

.8 mm

100000 Write/Erase Cycles

133 MHz

5 mm

SPI

134217728 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00005 Amp

6 mm

1.8

W25Q512JVFIQ

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

40 mA

67108864 words

3.3

8

SMALL OUTLINE

SOP16,.4

4

20

1.27 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

536870912 bit

3 V

ALSO OPERATES AT 2.7VMIN @104MHZ

NOR TYPE

.00006 Amp

10.31 mm

3.3

AT25SF161B-SSHD-T

Renesas Electronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

2097152 words

3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

2MX8

2M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

108 MHz

3.9 mm

SPI

16777216 bit

2.5 V

e4

NOR TYPE

.00003 Amp

4.925 mm

3

MT25QL256ABA8E12-0AAT

Micron Technology

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SERIAL

SYNCHRONOUS

33554432 words

3

8

GRID ARRAY, THIN PROFILE

1 mm

105 Cel

32MX8

32M

-40 Cel

BOTTOM

R-PBGA-B24

3.6 V

1.2 mm

133 MHz

6 mm

268435456 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

S26KL512SDABHB023

Infineon Technologies

FLASH

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

PARALLEL

SYNCHRONOUS

67108864 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

64MX8

64M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

536870912 bit

2.7 V

8 mm

96 ns

3

S29GL256P10TFI010

Infineon Technologies

FLASH

INDUSTRIAL

56

HTSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

110 mA

268435456 words

3

YES

3/3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

256MX1

256M

-40 Cel

256

YES

MATTE TIN

YES

DUAL

R-PDSO-G56

3

3.6 V

1.2 mm

14 mm

Not Qualified

268435456 bit

2.7 V

8/16

e3

40

260

NOR TYPE

.000005 Amp

18.4 mm

YES

100 ns

3

YES

SST26VF064B-104V/MF

Microchip Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

NO LEAD

SERIAL

SYNCHRONOUS

25 mA

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

100

1.27 mm

105 Cel

3-STATE

64MX1

64M

-40 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

.8 mm

100000 Write/Erase Cycles

104 MHz

5 mm

SPI

67108864 bit

2.7 V

e3

NOR TYPE

.000045 Amp

6 mm

3

IS25LP128-JKLE-TR

Integrated Silicon Solution

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

14 mA

16777216 words

3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.2

1

20

1.27 mm

105 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

.8 mm

100000 Write/Erase Cycles

133 MHz

5 mm

4-WIRE

134217728 bit

2.7 V

.000065 Amp

6 mm

SDINBDG4-16G-XA

Western Digital

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SERIAL

SYNCHRONOUS

17179869184 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

15

.5 mm

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

11.5 mm

137438953472 bit

2.7 V

MLC NAND TYPE

13 mm

SST26WF064C-104I/SM

Microchip Technology

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

GULL WING

SERIAL

SYNCHRONOUS

25 mA

67108864 words

1.8

1

SMALL OUTLINE

SOP8,.3

100

1.27 mm

85 Cel

3-STATE

64MX1

64M

-40 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

1.95 V

2.03 mm

100000 Write/Erase Cycles

104 MHz

5.25 mm

SPI

67108864 bit

1.65 V

e3

NOR TYPE

.000015 Amp

5.26 mm

1.8

AT25SF041B-SSHB-T

Renesas Electronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

18.5 mA

4194304 words

3

1

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

4MX1

4M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

108 MHz

3.9 mm

SPI

4194304 bit

2.7 V

e4

260

NOR TYPE

.00003 Amp

4.925 mm

3

AT45DB081D-SSU-2.5

Atmel

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

17 mA

8388608 words

2.7

3/3.3

1

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

8MX1

8M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

8388608 bit

2.5 V

ORGANIZED AS 4096 PAGES OF 264 BYTES EACH

e3

NOR TYPE

.00001 Amp

4.925 mm

2.7

MX25L51245GZ2I-10G

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

134217728 words

3

4

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

2

1.27 mm

85 Cel

128MX4

128M

-40 Cel

TIN

DUAL

R-PDSO-N8

3

3.6 V

.8 mm

104 MHz

6 mm

536870912 bit

2.7 V

CAN BE ORGNISED AS 512 MBIT X 1

e3

8 mm

2.7

S25FL064LABNFI040

Infineon Technologies

FLASH

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.8 mm

85 Cel

64MX1

64M

-40 Cel

MATTE TIN

DUAL

S-PDSO-N8

3

3.6 V

.6 mm

108 MHz

4 mm

67108864 bit

2.7 V

e3

260

4 mm

3

S29GL064S70TFI030

Infineon Technologies

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

67108864 bit

2.7 V

e3

18.4 mm

70 ns

3

W25Q128JVSJQ

Winbond Electronics

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

16777216 words

3.3

8

SMALL OUTLINE

SOP8,.3

4

20

1.27 mm

125 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

133 MHz

5.28 mm

SPI

134217728 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00006 Amp

5.28 mm

3.3

MX25L4006EM1I-12G/TR

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

524288 words

3.3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

86 MHz

3.9 mm

SPI

4194304 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000025 Amp

4.9 mm

2.7

W25Q256JWEIQ

Winbond Electronics

FLASH

INDUSTRIAL

8

HVQCCN

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

12 mA

33554432 words

1.8

8

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.3

20

1.27 mm

85 Cel

32MX8

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1.95 V

.8 mm

100000 Write/Erase Cycles

133 MHz

6 mm

SPI

268435456 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

8 mm

1.8

M25P80-VMP6G

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

8388608 words

3

3/3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

8MX1

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

5 mm

Not Qualified

15 ms

SPI

8388608 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

30

260

NOR TYPE

.0001 Amp

6 mm

2.7

M25P80VMP6G

STMicroelectronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

75 MHz

5 mm

Not Qualified

15 ms

SPI

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

MTFC32GAPALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

32GX8

32G

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MX25R3235FZNIL0

Macronix

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

6 mA

4194304 words

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

2

20

1.27 mm

85 Cel

3-STATE

4MX8

4M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

.8 mm

100000 Write/Erase Cycles

80 MHz

5 mm

SPI

33554432 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000024 Amp

6 mm

1.8

S34MS16G202BHI000

Cypress Semiconductor

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2147483648 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

4

.8 mm

85 Cel

2GX8

2G

-40 Cel

BOTTOM

R-PBGA-B63

3

1.95 V

1.2 mm

9 mm

17179869184 bit

1.7 V

260

SLC NAND TYPE

11 mm

1.8

SST26VF032B-104I/TD

Microchip Technology

EEPROM

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SERIAL

SYNCHRONOUS

30 mA

4194304 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE

BGA24,4X6,40

Flash Memories

100

1 mm

85 Cel

4MX8

4M

-40 Cel

TIN SILVER COPPER

BOTTOM

1

HARDWARE/SOFTWARE

R-PBGA-B24

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

104 MHz

6 mm

Not Qualified

SPI

33554432 bit

2.7 V

e1

NOR TYPE

.000045 Amp

8 mm

3

M25P10-AVMN6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

EEPROMs

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

1048576 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e4

NOR TYPE

.000005 Amp

4.9 mm

2.7

M29W640GH70ZA6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

67108864 bit

2.7 V

4/8

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MT29F4G08ABADAWP-IT:DTR

Micron Technology

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

536870912 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512MX8

512M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

4294967296 bit

2.7 V

e3

30

260

SLC NAND TYPE

18.4 mm

3.3

SDINBDG4-16G-XI2

Western Digital

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

17179869184 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

3000 Write/Erase Cycles

11 mm

137438953472 bit

2.7 V

MLC NAND TYPE

13.5 mm

SST25VF016B-50-4I-QAF

Microchip Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

30 mA

16777216 words

3/3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

100

1.27 mm

85 Cel

3-STATE

16MX1

16M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

SOFTWARE

R-XDSO-N8

3.6 V

.8 mm

100000 Write/Erase Cycles

50 MHz

5 mm

Not Qualified

SPI

16777216 bit

2.7 V

e4

NOR TYPE

.00002 Amp

6 mm

AT25SF128A-MHB-T

Renesas Electronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

16777216 words

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

20

1.27 mm

85 Cel

3-STATE

16MX8

16M

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1

3.6 V

.6 mm

100000 Write/Erase Cycles

133 MHz

5 mm

SPI

134217728 bit

2.7 V

e4

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000025 Amp

6 mm

AT25SF641-MHB-T

Renesas Electronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

67108864 words

1.8

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

85 Cel

64MX1

64M

-40 Cel

DUAL

R-PDSO-N8

1

1.95 V

.6 mm

104 MHz

5 mm

67108864 bit

1.65 V

6 mm

2.7

MT29F2G08ABAEAH4-IT:ETR

Micron Technology

FLASH

INDUSTRIAL

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

268435456 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

256MX8

256M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B63

3.6 V

1 mm

9 mm

2147483648 bit

2.7 V

e1

30

260

SLC NAND TYPE

11 mm

2.7

S29GL512P10TFIR10

Cypress Semiconductor

FLASH

INDUSTRIAL

56

HTSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

110 mA

536870912 words

3.3

YES

3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

512MX1

512M

-40 Cel

512

YES

MATTE TIN

YES

DUAL

R-PDSO-G56

3

3.6 V

1.2 mm

14 mm

Not Qualified

536870912 bit

3 V

8/16

e3

40

260

NOR TYPE

.000005 Amp

18.4 mm

YES

100 ns

3

YES

SST39VF040-70-4I-NHE

Microchip Technology

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

4K

30 mA

524288 words

3

YES

3/3.3

8

CHIP CARRIER

LDCC32,.5X.6

Flash Memories

100

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

128

YES

MATTE TIN

QUAD

1

R-PQCC-J32

3

3.6 V

2.8448 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

4194304 bit

2.7 V

e3

245

NOR TYPE

.000015 Amp

13.97 mm

70 ns

3

YES

M29W160EB70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

S25FL512SAGBHIC13

Infineon Technologies

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

100 mA

64094208 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE

BGA24,5X5,40

4

Flash Memories

20

1 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

TIN SILVER COPPER

BOTTOM

HARDWARE/SOFTWARE

R-PBGA-B24

3

3.6 V

1.2 mm

100000 Write/Erase Cycles

133 MHz

6 mm

Not Qualified

SPI

512753664 bit

2.7 V

e1

NOR TYPE

.0003 Amp

8 mm

3

SST25VF032B-80-4I-S2AF-T

Microchip Technology

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

30 mA

4194304 words

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

100

1.27 mm

85 Cel

4MX8

4M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

100000 Write/Erase Cycles

80 MHz

Not Qualified

SPI

33554432 bit

e4

NOR TYPE

.00002 Amp

IS25LP080D-JNLE

Integrated Silicon Solution

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE

1

1.27 mm

105 Cel

1MX8

1M

-40 Cel

TIN

DUAL

R-PDSO-G8

1

3.6 V

1.75 mm

133 MHz

3.9 mm

8388608 bit

2.3 V

e3

10

260

4.9 mm

3

M25P10-AVMN6P

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

EEPROMs

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

1048576 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e4

NOR TYPE

.000005 Amp

4.9 mm

2.7

MT25QU512ABB8ESF-0AAT

Micron Technology

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

536870912 words

1.8

1

SMALL OUTLINE

1.27 mm

105 Cel

512MX1

512M

-40 Cel

DUAL

R-PDSO-G16

2 V

2.65 mm

166 MHz

7.5 mm

536870912 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

10.3 mm

1.8

MT29F8G08ABBCAH4-IT:C

Micron Technology

FLASH

INDUSTRIAL

63

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

256K

20 mA

1073741824 words

1.8

NO

1.8

8

GRID ARRAY, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

1GX8

1G

-40 Cel

4K

YES

YES

BOTTOM

R-PBGA-B63

Not Qualified

8589934592 bit

4K

SLC NAND TYPE

.00005 Amp

30 ns

1.8

NO

MTFC32GAPALNA-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

100

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

NO

8

GRID ARRAY, THIN PROFILE

BGA100,10X15,40

1 mm

105 Cel

32GX8

32G

-40 Cel

NO

TIN SILVER COPPER

YES

BOTTOM

HARDWARE

R-PBGA-B100

3.6 V

1.2 mm

200 MHz

14 mm

274877906944 bit

2.7 V

e1

30

260

NAND TYPE

18 mm

2.7

NO

MTFC32GJDDQ-4MIT

Micron Technology

FLASH CARD

INDUSTRIAL

100

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

GRID ARRAY, LOW PROFILE

1 mm

TIN SILVER COPPER

BOTTOM

R-PBGA-B100

1.4 mm

14 mm

e1

MLC NAND TYPE

18 mm

3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.