INDUSTRIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S34ML01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified				1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
M25P64-VME6G	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified	15 ms	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			2.7
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			14 mm					274877906944 bit	2.7 V			e1	30	260			18 mm			2.7
MX25R3235FM1IL0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	SMALL OUTLINE	SOP8,.25	2		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		33554432 bit	1.65 V			e3			NOR TYPE	.000024 Amp	4.9 mm			1.8
S25FL032P0XMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-N8		3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI		65536 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.283 mm			3
S34ML02G200TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
AT45DB161E-SSHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB321E-SHFHC-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					33554432 bit	2.3 V			e4					5.29 mm			3
MX29F040CQI-70G	Macronix	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	14.05 mm		70 ns	5	YES
SST26VF032BA-104I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3			NOR TYPE	.000045 Amp	6 mm			3
IS25WP128-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	105 Cel		128MX1	128M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm					134217728 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
MT25QU01GBBB1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm					1073741824 bit	1.7 V								8 mm			1.8
MT29F2G08ABAGAWP-IT:G	Micron Technology	FLASH	INDUSTRIAL				PLASTIC/EPOXY		1	CMOS				ASYNCHRONOUS			268435456 words				8							85 Cel		256MX8	256M	-40 Cel			MATTE TIN																2147483648 bit				e3	30	260	SLC NAND TYPE
S25FS512SAGBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V			e1			NOR TYPE	.0001 Amp	8 mm			1.8
S34ML16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM			R-PBGA-B63	3	3.6 V	1.2 mm			9 mm					17179869184 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
SST26VF064BT-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm			SPI		67108864 bit	2.7 V			e3			NOR TYPE	.000045 Amp	6 mm			3
AT45DB081D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e3		260	NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB321E-MHF-Y	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	3.6 V	.6 mm		70 MHz	5 mm					33554432 bit	2.3 V			e4			NOR TYPE		6 mm			2.7
MX25L25645GZNI-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	5 mm			SPI		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	6 mm			3
MX25L6406EM2I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3		3/3.3	8	SMALL OUTLINE	SOP8,.3	1	Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	86 MHz	5.23 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm			3.3
S29GL512P11FFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		512MX1	512M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29JL064J55TFI000	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
S25FL512SAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
MT25QU128ABA1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm					134217728 bit	1.7 V				30	260	NOR TYPE		8 mm			1.8
N25Q032A13ESC40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.24		Flash Memories	20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			3
N25Q064A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm					67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
S34ML04G100TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				4294967296 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
SST39VF6401B-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	2K	YES	MATTE TIN		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
S25FL127SABMFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.0001 Amp	5.28 mm			3
IS25WP064A-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		29 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		67108864 bit	1.65 V			e3	10	260	NOR TYPE	.000035 Amp	5.28 mm			1.8
MT25QU256ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					268435456 bit	1.7 V				30	260			10.3 mm			1.8
MX30LF2G18AC-XKI	Macronix	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm					2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3
MTFC32GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	1.7 V				30	260	NAND TYPE		13 mm			1.8
S25FL512SAGBHI210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V			e1		260	NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGMFIR10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
AM29F400BT-90EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm				TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	5
S29GL064S70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F128J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
MX25L3233FZNI-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm			3
S29GL064N90TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL064S70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3		260			18.4 mm		70 ns	3
W25Q32JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			3
AT25SF081-SSHD-B	Dialog Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16 mA	8388608 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		8388608 bit	2.5 V	ALSO OPERATES WITH 2.3VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	4.925 mm			3
AT45DB161E-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00001 Amp	4.925 mm			2.7
JS28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
MX25U51245GZ4I00	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V			e3			NOR TYPE	.00005 Amp	8 mm			1.8
M25P80-VMN6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
MT29F4G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				4294967296 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.