OTHER Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W431-150N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	524288 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	12	NO
M50FW016N5G	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX8	2M	-20 Cel			TIN BISMUTH		DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		16777216 bit	3 V			e6		260	NOR TYPE		18.4 mm		11 ns	3
M50FLW040AN5TP	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-20 Cel	8	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29W400B-100ZA5	STMicroelectronics	FLASH	OTHER	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX8	512K	-20 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFG AS 256K X 16; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	9 mm		100 ns	2.7	YES
M29F400T-70M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44				100000 Write/Erase Cycles		Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			70 ns		YES
M29W040-120NZ5R	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	12.4 mm		120 ns	3	YES
M29W800AB100M5T	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		100 ns	2.7	YES
M29W040-150N5RTR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
M29W008AT90N5T	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	100 mA	1048576 words	3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	20	.5 mm	85 Cel			1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29R800B-150M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	28.2 mm		150 ns	3	YES
M29W800AT100M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		100 ns	2.7	YES
M29F400B-150N5R	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES		256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		YES
M29W800B-150N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M29F040-90XK5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32		5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		90 ns	5	YES
MT28F221-100YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			100 ns		NO
MT28F221-80YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			80 ns		NO
M58LR128GU85ZB5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		9 mm	Not Qualified	TOP	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
MT28F221-90XN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			90 ns		NO
M58LR128GT85ZB5E	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GB85ZB5T	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GL85ZB5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		9 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
MT28F221-120XN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			120 ns		NO
M58LT256GT1ZA5	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES	TIN LEAD		BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	268435456 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT128GSB1ZA5E	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT256GT1ZA5E	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	268435456 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LR128GU85ZB5U	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		9 mm	Not Qualified	TOP	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
M58LR256GU90ZC5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE	.000005 Amp	10 mm	YES	90 ns	1.8	NO
M58LR256GL90ZC5U	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE	.000005 Amp	10 mm	YES	90 ns	1.8	NO
MT28F221-120YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			120 ns		NO
M58LT128GST1ZA5E	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LR128GT85ZB5	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LT128GSB1ZA5	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LR256GL90ZC5E	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V						NOR TYPE	.000005 Amp	10 mm	YES	90 ns	1.8	NO
M58LT128GST1ZA5F	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LR128GT85ZB5T	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified	TOP	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LT256GT1ZA5F	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	268435456 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
MT28F221-80N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			80 ns		NO
MT28F221-90N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			90 ns		NO
MT28F221-100N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			100 ns		NO
M58LT128GST1ZA5	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	TOP	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT128GSB1ZA5F	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	8388608 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	ALSO OPERATES IN SYNC-REGISTERED MODE	8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT256GB1ZA5	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES	TIN LEAD		BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LT256GB1ZA5F	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
MT28F221-120N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			120 ns		NO
M58LR128GL85ZB5U	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		9 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V						NOR TYPE	.000005 Amp	7.7 mm	YES	85 ns	1.8	NO
MT28F221-100XN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			100 ns		NO
M58LT256GB1ZA5E	STMicroelectronics	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	47 mA	16777216 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V		8		40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	1.8	NO
M58LR256GU90ZC5U	STMicroelectronics	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B44		2 V	1 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V						NOR TYPE	.000005 Amp	10 mm	YES	90 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.