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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29WS01GS0SWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29GL128P11TACR10	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		18.4 mm		110 ns	3
S29WS256R0PBHW220	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm		TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29NS064N0LBFW000	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	60 mA	4194304 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,63	YES		YES	BOTTOM		R-PBGA-B44						Not Qualified	TOP	67108864 bit							NOR TYPE	.00004 Amp		YES	80 ns		YES
S29GL128P10TFCR23	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		18.4 mm		100 ns	3
S29XS256R0PBHW13	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words		1.8			16	GRID ARRAY					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							7.7 mm		80 ns	1.8
S29WS01GS0PWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29WS064J1ABAW000	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		4194304 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80						Not Qualified	BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29VS128RAABHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	16777216 words		1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			10	.5 mm	85 Cel	3-STATE	16MX8	16M	-25 Cel	4,127	YES			BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	6.2 mm	Not Qualified	TOP	134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29WS128J0PBAW032	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM		R-PBGA-B84						Not Qualified	BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29XS064R0PBHW301	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			4194304 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		5 mm			67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			7.5 mm		80 ns	1.8
S29WS01GS0PWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29WS512P0PBAW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS01GSABWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE					NOR TYPE		13 mm		115 ns	1.8
S29WS512PABBFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128J0PBFW023	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3					Not Qualified	BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128P0LBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS064J0SBFW032	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	4194304 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3					Not Qualified	BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29VS064R0PBHW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm		5 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	7.5 mm	YES	80 ns	1.8	YES
S29GL128P11FFCR22	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX1	128M	0 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		13 mm		110 ns	3
S29NS032J0PBFW00	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,32K	60 mA	2097152 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-25 Cel	4,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B44	3					Not Qualified	TOP	33554432 bit				e1	40	260	NOR TYPE	.00004 Amp		YES	65 ns		YES
S29WS512R0SBHW020	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm		TOP	536870912 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29WS128POSBFW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	8388608 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3					Not Qualified	BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	9 ns		YES
S29GL256P11TACR20	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		268435456 bit	3 V						NOR TYPE		18.4 mm		110 ns	3
S29WS256POLBAW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	16777216 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3					Not Qualified	BOTTOM/TOP	268435456 bit			8	e1			NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29WS064J0PBFW022	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3					Not Qualified	BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS064J0SBAW020	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	4194304 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80						Not Qualified	BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS064R0PBHW013	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29XS032R0PBHW010	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		5 mm		BOTTOM	33554432 bit	1.7 V	BOTTOM BOOT BLOCK							7.5 mm		80 ns	1.8
S29WS256P0LBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words		1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29XS032R0PBHW000	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		5 mm		TOP	33554432 bit	1.7 V	TOP BOOT BLOCK							7.5 mm		80 ns	1.8
S29VS128R0SBHW10	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words		1.8			16	GRID ARRAY					.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							7.7 mm		80 ns	1.8
S29WS128RAABHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		11.6 mm		80 ns	1.8
S29WS512POPBAW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	33554432 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B84	3					Not Qualified	BOTTOM/TOP	536870912 bit			8	e1			NOR TYPE	.000005 Amp		YES	11.2 ns		YES
S29WS064J0PBAW023	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words			YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80						Not Qualified	BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29NS128N0LBFW002	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	60 mA	8388608 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM		R-PBGA-B44	3					Not Qualified	TOP	134217728 bit				e2	40	260	NOR TYPE	.00004 Amp		YES	80 ns		YES
S29XS256R0SBHW001	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16X16	16	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		256 bit	1.7 V								7.7 mm			1.8
S29WS01GS0SWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE					NOR TYPE		13 mm		115 ns	1.8
S29GL256P11FFCR10	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words		3.3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		256MX1	256M	0 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		268435456 bit	3 V						NOR TYPE		13 mm		110 ns	3
S29GL128P90FACR23	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words		3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX1	128M	0 Cel	128	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified		134217728 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29XS032RABBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		5 mm		TOP	33554432 bit	1.7 V	TOP BOOT BLOCK							7.5 mm		80 ns	1.8
S29WS128P0SBAW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8388608 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	134217728 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29GL128P10TACR23	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX1	128M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	3 V						NOR TYPE		18.4 mm		100 ns	3
S29XS256RABBHW301	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16X16	16	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		256 bit	1.7 V								7.7 mm			1.8
S29WS256POSBAW002	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	16777216 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3					Not Qualified	BOTTOM/TOP	268435456 bit			8	e1			NOR TYPE	.000005 Amp		YES	9 ns		YES
S29WS01GSAAWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29WS256P0SBFW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm		BOTTOM/TOP	268435456 bit	1.7 V						NOR TYPE		11.6 mm		80 ns	1.8
S29GL01GP11TFCR22	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			1073741824 words	COMMON	3.3	YES		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP56,.78,20			20	.5 mm	85 Cel	TOTEM POLE	1GX1	1G	0 Cel		YES		YES	DUAL	HARDWARE/SOFTWARE	R-PDSO-G56		3.6 V	1.2 mm		14 mm			1073741824 bit	3 V							.000005 Amp	18.4 mm		110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.