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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F221-90YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			90 ns		NO
M58LR128GB85ZB5	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V		8	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GB85ZB5E	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
MT28F221-70XN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
MT28F221-70YN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
MT28F221-80XN5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			80 ns		NO
M58LR128GB85ZB5F	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M58LR128GT85ZB5F	STMicroelectronics	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	52 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56		2 V	1 mm		7.7 mm	Not Qualified		TOP	134217728 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
MT28F221-70N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
S29GL256P90FFCR10	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		256MX1	256M	0 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29WS128PABBFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL256P90FACR12	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		256MX1	256M	0 Cel	256	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29WS064J0SBAW023	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS256P0SBAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS256POSBAW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	268435456 bit			8	e1			NOR TYPE	.000005 Amp		YES	9 ns		YES
S29WS512POLBFW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	536870912 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29WS064J1ABAW013	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS064J1ABFW000	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3					Not Qualified		BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS128J0PBFW020	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128POSBAW003	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit			8	e1			NOR TYPE	.000005 Amp		YES	9 ns		YES
S29WS128J0SBFW030	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29NS064J0LBJW002	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,32K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm		8 mm	Not Qualified	80 ms	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e2	40	260	NOR TYPE	.00004 Amp	9.2 mm	YES	70 ns	1.8
S29WS064J0PBFW032	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3					Not Qualified		BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128PABBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29GL256P90TACR10	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	0 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29WS512P0LBAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128J1ABAW003	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B84						Not Qualified		BOTTOM/TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS512POSBAW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	536870912 bit			8	e1			NOR TYPE	.000005 Amp		YES	9 ns		YES
S29WS256POLBFW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	268435456 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29WS064J0PBFW033	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3					Not Qualified		BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29WS128J1ABFW012	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS512PABBAW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS512P0LBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS064J1ABAW010	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K		4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS256P0LBAW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS256P0PBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS256P0SBFW003	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128POLBFW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	13.5 ns		YES
S29WS128J0SBFW020	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	60 mA	8388608 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	45 ns		YES
S29WS512P0LBAW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	1.95 V	1 mm		8 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1			NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29WS128POSBFW000	Infineon Technologies	FLASH	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B84	3					Not Qualified		BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	9 ns		YES
S29GL256P90TACR23	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256MX1	256M	0 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29WS064J0PBAW022	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	54 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	55 ns		YES
S29GL256P11TACR10	Infineon Technologies	FLASH	OTHER	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		256MX1	256M	0 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	3 V						NOR TYPE		18.4 mm		110 ns	3
S29VS128RAABHW001	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16X8	16	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified			128 bit	1.7 V								7.7 mm			1.8
S29NS064N0PBFW000	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,63	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		TOP	67108864 bit							NOR TYPE	.00004 Amp		YES	80 ns		YES
S29VS128R0SBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	32K,128K	76 mA	16777216 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			10	.5 mm	85 Cel	3-STATE	16MX8	16M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	6.2 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	7.7 mm	YES	80 ns	1.8	NO
S29NS064N0SBFW003	Infineon Technologies	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	60 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,63	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		TOP	67108864 bit							NOR TYPE	.00004 Amp		YES	80 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.