FBGA Other Function Memory ICs 1,784

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
KBC00B7A0M-D405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	45 mA				FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B111		Not Qualified				.000015 Amp	70 ns
KAD050300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	70 ns
K1B1616B8B-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit				70 ns
K5D5657DCM-F015	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA				FLASH+SDRAM	1.8,2.65		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107		Not Qualified				.00005 Amp	45 ns
KBB06A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	45 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00002 Amp	70 ns
KAD100300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	70 ns
K1S3216BCC-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
KAD080300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	70 ns
KAD050300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	80 ns
KBE00F005A-D411	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	20 mA			2.7	FLASH+SDRAM	2.7		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B137	1	Not Qualified		e3		.001 Amp	30 ns
KBE00500AM-D437	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B137		Not Qualified				.001 Amp	30 ns
KBB05A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	45 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00002 Amp	70 ns
KAL00B00CM-FG22	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107		Not Qualified				.00005 Amp	10 ns
KAL00B00BM-FGXX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127		Not Qualified				.00005 Amp
K1S32161CC-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
K1S32161CC-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
K1B3216BDD-BI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	33554432 bit			.0001 Amp	70 ns
K5D5657ACM-F015	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	65 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107		Not Qualified				.000001 Amp	15 ns
K1B6416B2D-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	67108864 bit			.00012 Amp	70 ns
K5A3340YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00001 Amp	70 ns
K5A3240YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00001 Amp	80 ns
K1B1616BDB-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit				70 ns
K1S32161CD-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
KBB05A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00002 Amp	70 ns
KAB01D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00001 Amp	85 ns
K5A3340YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00001 Amp	70 ns
K1S321615A-E	Samsung		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.00001 Amp	85 ns
KAB01D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00001 Amp	85 ns
K1C6416B8D-FI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit		240	.00003 Amp	70 ns
KAG00H008M-FGG2	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA			3.3	FLASH+SDRAM	3.3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107		Not Qualified				.00005 Amp
K1S161615M-EI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	1048576 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	2.7 V	-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	16777216 bit			.000015 Amp	70 ns
K1B6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	67108864 bit			.00012 Amp	70 ns
K1B6416B2D-BI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	67108864 bit			.00012 Amp	70 ns
K1C6416B8D-BI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit		260	.00003 Amp	70 ns
KAD090300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	70 ns
KBF080800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B115		Not Qualified				.00003 Amp	88.5 ns
K5A3280YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.000015 Amp	80 ns
K1C6416B8D-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit		260	.00003 Amp	70 ns
K1S321611C-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
KAB04D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00001 Amp	85 ns
KAB04D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80		Not Qualified				.00001 Amp	85 ns
KAD060300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.00002 Amp	80 ns
K1S32161CC-FI700	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit			.0001 Amp	70 ns
K5A3280YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69		Not Qualified				.000015 Amp	80 ns
KAL00B00BM-FGVX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127		Not Qualified				.00005 Amp
K1B1616BDB-BI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit				70 ns
KAG00E007M-FGGV	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107		Not Qualified				.00005 Amp	50 ns
K1B3216BDD-FI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54		Not Qualified	33554432 bit			.0001 Amp	70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.