FBGA Other Function Memory ICs 1,784

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Memory Density	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
KAD090300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00002 Amp	80 ns
K1B6416B8D-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	67108864 bit		.00012 Amp	70 ns
K1B1616B8B-BI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit			70 ns
KAA00B606A-TGPV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-20 Cel	BOTTOM	R-PBGA-B127		Not Qualified			.00002 Amp	85 ns
K1B6416B8D-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	67108864 bit		.00012 Amp	70 ns
K5P2881BCM-F070	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	22 mA			2.6	FLASH+SRAM	2.6		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000015 Amp	70 ns
K1S6416BCD-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	67108864 bit		.00012 Amp	70 ns
K1S161611M-EI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	1048576 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	16777216 bit		.00008 Amp	70 ns
K1B3216BDD-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	33554432 bit		.0001 Amp	70 ns
K1C6416B2D-BI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit	260	.00003 Amp	70 ns
K5L5628JBM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	70 mA				FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel	BOTTOM	R-PBGA-B115		Not Qualified			.00007 Amp	88.5 ns
K5A3380YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000015 Amp	70 ns
K5P5781FCM-F055	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	28 mA			2.8	FLASH+SRAM	2.8		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000001 Amp	55 ns
K5A3240YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00001 Amp	80 ns
K1S3216B1C-FI85	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	30 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit		.0001 Amp	85 ns
KAB03D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B80		Not Qualified			.00001 Amp	85 ns
KAA00B209M-TGSX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127		Not Qualified			.00001 Amp	100 ns
K1B3216BDD-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	33554432 bit		.0001 Amp	70 ns
KAD070300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00002 Amp	80 ns
K1B1616BDB-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit			70 ns
K1C6416B8D-BI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit	260	.00003 Amp	70 ns
K5A3240YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00001 Amp	70 ns
K1B1616B8B-BI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit			70 ns
KBB05B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA				FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	R-PBGA-B80		Not Qualified			.000001 Amp	70 ns
KBC00A6A0M-T403	Samsung	MEMORY CIRCUIT	OTHER	87	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM+SRAM	3		GRID ARRAY, FINE PITCH	BGA87,10X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B87		Not Qualified			.00001 Amp	85 ns
K1S6416BCD-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	67108864 bit		.00012 Amp	70 ns
KAD080300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00002 Amp	80 ns
K1C6416B8D-FI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit	240	.00003 Amp	70 ns
K5A3380YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000015 Amp	80 ns
K5A3240YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00001 Amp	70 ns
K5A3380YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000015 Amp	80 ns
K1C6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3	Not Qualified	67108864 bit	260	.00003 Amp	70 ns
KBB06B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA				FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	R-PBGA-B80		Not Qualified			.000001 Amp	70 ns
K5D1G13ACD-D075	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B137		Not Qualified			.001 Amp	30 ns
KAB03D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B80		Not Qualified			.00001 Amp	85 ns
K5A3280YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.000015 Amp	70 ns
K1S6416BCD-BI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	67108864 bit		.00012 Amp	70 ns
K1B1616BDB-FI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified	16777216 bit			70 ns
KAD070300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	HYBRID	BALL	40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00002 Amp	70 ns
K1B6416B6C-BI700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA			1.85	FLASH+PSRAM	1.85		GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel				-40 Cel	BOTTOM	R-PBGA-B54		Not Qualified			.18 Amp	70 ns
K5D1G13ACD-D075000	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B137		Not Qualified			.001 Amp	30 ns
K5L5628JTM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	70 mA				FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel	BOTTOM	R-PBGA-B115		Not Qualified			.00007 Amp	88.5 ns
KAE00C400M-TGNN	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL					FLASH+PSRAM	2.5,3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B111		Not Qualified			.00005 Amp	80 ns
K1S3216BCC-FI85	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B48		Not Qualified	33554432 bit		.0001 Amp	85 ns
KBC00B7A0M-F405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	45 mA				FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B111		Not Qualified			.000015 Amp	70 ns
K5A3340YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	BOTTOM	S-PBGA-B69		Not Qualified			.00001 Amp	80 ns
KAA00B209M-TGSV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	HYBRID	BALL	35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B127		Not Qualified			.00001 Amp	100 ns
KBF090800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	100 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	BOTTOM	R-PBGA-B115		Not Qualified			.00003 Amp	88.5 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.