INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB85RS256BPNF-G-JNERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BCYS35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	18.41 mm	35 ns
47C16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V		e3	40	260		4.9 mm	400 ns
CY8C20110-SX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		3			1	SMALL OUTLINE			1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	5.25 V	1.727 mm		3.9 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	40	260		9.893 mm
DS2411P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e0			.000001 Amp	3.94 mm
DS2411P/TR	Dallas Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260	.000001 Amp	3.94 mm
DS2411P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260	.000001 Amp	3.94 mm
47L16-I/P	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V		e3				9.271 mm	400 ns
S70KL1281DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		134217728 bit	2.7 V						8 mm
S70KL1281DABHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		134217728 bit	2.7 V						8 mm
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	262144 bit	3 V					.007 Amp	18.41 mm	35 ns
MR25H256CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		32768 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	1.05 mm		5 mm	Not Qualified	262144 bit	2.7 V					.00001 Amp	6 mm
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V		e3	40	260		4.9 mm	400 ns
DS2401-SL+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		64 words		5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V		e3		250
ST25DV64K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		65536 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm		3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
MR25H10CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1 mm		5 mm	Not Qualified	1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.000115 Amp	6 mm
S27KL0641DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		67108864 bit	2.7 V						8 mm
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS	46.5 mA	524288 words		3.3		3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	4194304 bit	3 V					.00075 Amp	6 mm
S27KL0641DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		67108864 bit	2.7 V						8 mm
MR25H256CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V		e3	30	260		6 mm
ST25DV16K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		16384 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm		3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
FM3808-70-T	Ramtron International	MEMORY CIRCUIT	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1			GULL WING	SYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0		240		11.8 mm
CY15B104QSN-108SXIES	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		524288 words		3			8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	2.03 mm		5.23 mm		4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		5.23 mm
MR2A16AVMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	105 Cel		256KX16	256K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
S27KL0641DABHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		67108864 bit	2.7 V						8 mm
47L04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		4096 bit	2.7 V		e3	40	260		4.9 mm	400 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
WSF512K16-39H2I	Microsemi	MEMORY CIRCUIT	INDUSTRIAL	66	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		524288 words		5			16	GRID ARRAY			2.54 mm	85 Cel		512KX16	512K	-40 Cel	GOLD	PERPENDICULAR		S-CPGA-P66		5.5 V	5.7 mm		35.2 mm	Not Qualified	8388608 bit	4.5 V	SRAM IS ORGANISED AS 512K X 16	e4				35.2 mm
CY15B256Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		262144 bit	2 V				260		4.889 mm
S27KS0641DPBHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm		6 mm		67108864 bit	1.7 V						8 mm
S70KS1281DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm		6 mm		134217728 bit	1.7 V						8 mm
47C04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	75 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
S27KS0641DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm		6 mm		67108864 bit	1.7 V						8 mm
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3				4.925 mm	35 ns
M24SR64-YMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N8	1	5.5 V	.6 mm		2 mm		65536 bit	2.7 V		e4	30	260		3 mm
MR10Q010CMB	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		131072 words		3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1.35 mm		6 mm		1048576 bit	3 V						8 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
AF4GUDI-OEM	Atp Electronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			4294967296 words					8	UNCASED CHIP				85 Cel		4GX8	4G	-40 Cel		UPPER		X-XUUC-N							34359738368 bit
MT29C4G48MAZBAAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B168		1.9 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V		e1				12 mm	25 ns
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
DS2411X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	.1 mA	64 words				2/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	Other Memory ICs		85 Cel		64X1	64	-40 Cel		BOTTOM		R-PBGA-B4	1	5.25 V	.59 mm		.69 mm	Not Qualified	64 bit	1.5 V				245	.000001 Amp	1.09 mm
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE			1.27 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YSB12I/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		8192 words		3.3			8	UNCASED CHIP				85 Cel		8KX8	8K	-40 Cel		UPPER		X-XUUC-N		5.5 V					65536 bit	2.7 V
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.