INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
NMC27C16QE-45	Texas Instruments	OTP ROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			2048 words	COMMON	5		5	8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	16384 bit			e0					450 ns
SN74HC670NP1	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE							2/6		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel		DUAL	R-PDIP-T16						Not Qualified
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			2097152 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL	R-PDSO-G8	3					Not Qualified	16777216 bit				30	260	.00005 Amp
SN74HC670N3	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE							2/6		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel		DUAL	R-PDIP-T16
DS1422L-F5	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD			256 words					8	DISK BUTTON				85 Cel		256X8	256	-40 Cel	TIN LEAD	END	O-MEDB-N2		6 V				Not Qualified	2048 bit	2.8 V		e0
DS1963S	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4096 words		5		3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		85 Cel		4KX1	4K	-40 Cel	TIN LEAD	END	O-MEDB-N2		5.25 V				Not Qualified	4096 bit	2.8 V		e0
DS14220-F50	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD			256 words					8	DISK BUTTON				85 Cel		256X8	256	-40 Cel	TIN LEAD	END	O-MEDB-N2		6 V				Not Qualified	2048 bit	2.8 V		e0
DS2401X-S+T	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		64 words		5			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,28/12		.3 mm	85 Cel		64X1	64	-40 Cel	TIN SILVER COPPER NICKEL	BOTTOM	R-PBGA-B4	1	6 V	.5 mm		.678 mm		64 bit	2.8 V		e2	30	260		1.338 mm
DS2400Y	Analog Devices		INDUSTRIAL	3			PLASTIC/EPOXY	YES								5		5			SOT-223	Other Memory ICs		85 Cel				-40 Cel	TIN LEAD								Not Qualified				e0
DS2422P/T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	ASYNCHRONOUS		1024 words		5			1	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-PDSO-C6		6 V	1.5 mm		3.76 mm	Not Qualified	1024 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				3.94 mm
DS2400T	Analog Devices		INDUSTRIAL	3			PLASTIC/EPOXY	NO								5		5			SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	TIN LEAD	SINGLE							Not Qualified				e0
N36RW02DTPT3G	Onsemi	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING			64 words					32	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel		64X32	64	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8		10 V	1.75 mm		3.9 mm		2048 bit	1.8 V						4.9 mm
N36RW02DWPT3G	Onsemi	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1		GULL WING			64 words					32	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel		64X32	64	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8		10 V	1.75 mm		3.9 mm		2048 bit	1.8 V						4.9 mm
M76DW52003BA70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	70 ns
M36DR432B120ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	120 ns
M36W108B100ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M76DW62000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words		3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	70 ns
M36WT864BF100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96		2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M36W108AT100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M76DW63000A70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words		3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	70 ns
DSM2180F3V-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words		3.3			8	FLATPACK			.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		3.6 V	2.35 mm		10 mm	Not Qualified	1048576 bit	3 V		e4				10 mm
M36DR232B100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
Z8038B6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	128 words		5		5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V		4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V		e0				52.18 mm
M72DW64000B90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words		3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0015 Amp	11.6 mm	90 ns
M36W216TI70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	70 ns
M36W216T85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
SRTAG2K-DSB12I/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words					8	UNCASED CHIP				85 Cel		256X8	256	-40 Cel		UPPER	X-XUUC-N							2048 bit
M36W108B120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36DR232A100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36WT864TF100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96		2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M36DR432A100ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36DR232A100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36W432T70ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
M36W108AB120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
M74DW66500B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	4194304 words		3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0015 Amp	11.6 mm	70 ns
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words		5			8	FLATPACK			.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52		5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V		e4				10 mm
M36DR432BD85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words		2	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M36W0R5020B0ZAQF	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	2097152 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	33554432 bit	1.7 V	SRAM IS ORGANIZED AS 256K X 16	e1			.00005 Amp	10 mm	70 ns
M36W432B85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66						Not Qualified				e1					85 ns
M76DW52003BA70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	70 ns
M72DW64000B70ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words		3	FLASH+PSRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8	e0			.0015 Amp	11.6 mm	70 ns
DSM2180F3-90K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words		5			8	CHIP CARRIER			1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V		e3				19.1262 mm
M36W0R5020B0ZAQT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	2097152 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	33554432 bit	1.7 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00005 Amp	10 mm	70 ns
M36W432T70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66						Not Qualified				e1					70 ns
M36WT864TF85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words		1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
M36W0R6030B0ZAQT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	SRAM IS ORGANIZED AS 512K X 16	e0			.00001 Amp	10 mm	70 ns
M36DR232B120ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words			FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	120 ns
M36W832BE100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0			.00002 Amp	12 mm	100 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.