INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3			1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.73 mm			5.3 mm			4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED		5.85 mm
MR25H256ACDFR	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL			R-PDSO-N8	3	3.6 V	.9 mm			5 mm			262144 bit	2.7 V						6 mm
MT38W2011AA033JZZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		4194304 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-40 Cel			BOTTOM			R-PBGA-B52		1.95 V	1.2 mm			4 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					6 mm
MT38W2021A902ZQXZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-40 Cel			BOTTOM			R-PBGA-B88		1.95 V	1.2 mm			8 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM					10 mm
S27KS0641DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		8MX8	8M	-40 Cel			BOTTOM			R-PBGA-B24	3	1.95 V	1 mm			6 mm			67108864 bit	1.7 V						8 mm
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs		1.27 mm	85 Cel		128X8	128	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		1024 bit	2.7 V						4.9 mm	250 ns
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	70 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G44	3	3.6 V	1.2 mm			10.16 mm	Not Qualified		1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR0A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	165 mA	65536 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs		.75 mm	85 Cel		64KX16	64K	-40 Cel			BOTTOM			S-PBGA-B48		3.6 V	1.35 mm			8 mm	Not Qualified		1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		262144 words		3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.75 mm	105 Cel		256KX16	256K	-40 Cel			BOTTOM			S-PBGA-B48		3.6 V	1.35 mm			8 mm			4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		131072 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			1048576 bit	1.8 V						4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		4KX8	4K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			32768 bit	2.7 V						4.9 mm
MT29C4G48MAZBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER		BOTTOM			R-PBGA-B137		1.95 V	1 mm			10.5 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
S27KL0641DABHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		8MX8	8M	-40 Cel			BOTTOM			R-PBGA-B24	3	3.6 V	1 mm			6 mm			67108864 bit	2.7 V						8 mm
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			262144 bit	2.7 V		e3				4.925 mm	35 ns
S71KL512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		67108864 words		3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel			BOTTOM			R-PBGA-B24	3		1 mm			6 mm			536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
AF512UDI-OEM	Atp Electronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD				536870912 words					8	UNCASED CHIP					85 Cel		512MX8	512M	-40 Cel			UPPER			X-XUUC-N									4294967296 bit
MR44V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			65536 bit	1.8 V						4.9 mm
AT88SC018-SU-CM-T	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words					1	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		4096 bit	2.7 V		e3				4.925 mm
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD			S-XQCC-N16	3	5.25 V	.6 mm			3 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
DS2405Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words				3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD		DUAL			R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified		64 bit	2.8 V		e0		245		6.5 mm
DS2405Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words				3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN		DUAL			R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified		64 bit	2.8 V		e3	30	260		6.5 mm
CY8C24033-24PVXI	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words					1	SMALL OUTLINE, SHRINK PITCH				.635 mm	85 Cel		8KX1	8K	-40 Cel			DUAL			R-PDSO-G56		5.25 V	2.794 mm			7.5057 mm	Not Qualified		8192 bit	3 V						18.415 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
CY8C20142-SX1I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	3	5.25 V	1.727 mm			3.9 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		4.889 mm
CY8C20180-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD			S-XQCC-N16	3	5.25 V	.6 mm			3 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
MR45V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			65536 bit	1.8 V						4.9 mm
MT29C4G48MAYBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER		BOTTOM			R-PBGA-B137		1.95 V	1 mm			10.5 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MT38W2011A901ZQXZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-40 Cel			BOTTOM			R-PBGA-B88		1.95 V	1.2 mm			8 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					10 mm
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3			.0001 Amp	4.925 mm
CY15B004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN		DUAL			R-PDSO-G8	3	3.65 V	1.727 mm			3.8985 mm			4096 bit	2.7 V				260		4.889 mm
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		262144 words		3.3			8	IN-LINE				2.54 mm	85 Cel		256KX8	256K	-40 Cel			DUAL			R-PDIP-T8		3.6 V				7.62 mm			2097152 bit	2.7 V						9.2 mm
MT29C4G96MAZAPCJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER		BOTTOM			S-PBGA-B168		1.95 V	.9 mm			12 mm			4294967296 bit	1.7 V		e1				12 mm
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX8	16M	-40 Cel			BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm			134217728 bit	2.7 V						10 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified		330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	3.6 V	1.2 mm			3 mm			4096 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC0104C-SH-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm			1024 bit	2.7 V		e4				4.925 mm	35 ns
AT88SC0104CA-Y6H-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs		.5 mm	85 Cel		128X8	128	-40 Cel			DUAL	1		R-XDSO-N8		3.6 V	.6 mm			2 mm	Not Qualified		1024 bit	2.7 V						3 mm	250 ns
AT88SC018-SU-CN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words					1	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		4096 bit	2.7 V		e3				4.925 mm
AT88SC0808CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		1024 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs		1.27 mm	85 Cel		1KX8	1K	-40 Cel			DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		8192 bit	2.7 V						4.9 mm	250 ns
USBF129T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING		SYNCHRONOUS		524288 words					8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm			4194304 bit	2.7 V		e3				4.9 mm
SN74HC670J	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-XDIP-T16							Not Qualified
SN74HC670NP3	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-PDIP-T16
SN74HC670N	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-PDIP-T16							Not Qualified
SN74HC670FH	Texas Instruments		INDUSTRIAL	20	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD								2/6		CHIP CARRIER	LCC20,.35SQ	Other Memory ICs		1.27 mm	85 Cel				-40 Cel			QUAD			S-XQCC-N20							Not Qualified
SN74HC670JP4	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-XDIP-T16
SN74HC670J4	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-XDIP-T16
SN74HC670N1	Texas Instruments		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE								2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel				-40 Cel			DUAL			R-PDIP-T16							Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.