INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
EPCQ4ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words		3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	3	3.6 V	1.75 mm	100 MHz	3.9 mm		4194304 bit	2.7 V		e3	30	260	NOR TYPE	.00005 Amp	4.9 mm
DS2401P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V		e0					3.94 mm
DS2401P+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260			3.94 mm
EPCQ128ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words		3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		134217728 bit	2.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	10.3 mm
DS2401P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V		e0	20	240			3.94 mm
DS2401P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm		3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260			3.94 mm
DS2401Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e0					6.5 mm
DS2401Z+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260			6.5 mm
DS2401Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e0	20	240			6.5 mm
DS2401Z+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words		5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260			6.5 mm
DS2411R/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs		.95 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G3	1	5.25 V	1.12 mm		1.3 mm	Not Qualified	64 bit	1.5 V		e0	20	240		.000001 Amp	2.92 mm
DS2411R/TR	Dallas Semiconductor		INDUSTRIAL	3			PLASTIC/EPOXY	YES						.1 mA					2/5			TO-236	Other Memory ICs			85 Cel				-40 Cel										Not Qualified								.000001 Amp
DS2411R+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs		.95 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G3	1	5.25 V	1.12 mm		1.3 mm	Not Qualified	64 bit	1.5 V		e3	30	260		.000001 Amp	2.92 mm
EPCQ64ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words		3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		67108864 bit	2.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm
MR2A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		256KX16	256K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.028 Amp	18.41 mm	35 ns
ST25DV04K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.4 mm
ST25DV64K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		65536 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M24SR64-YDW6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		65536 bit	2.7 V							4.4 mm
DS2401	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V		e0	20	240
DS2401+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5		3/5	1	CYLINDRICAL		Other Memory ICs			85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3	1	6 V				Not Qualified	64 bit	2.8 V		e3	30	250
47L16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
47L16-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V		e3	40	260			4.4 mm	400 ns
ST25DV16K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		16384 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
DS2401/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V		e0
DS2401+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words		5		3/5	1	CYLINDRICAL		Other Memory ICs			85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3		6 V				Not Qualified	64 bit	2.8 V		e3		250
ST25DV64K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		65536 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.4 mm
MR25H10CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V		e3	30	260		.000115 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
ST25DV04K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
MR2A16AVYS35	NXP Semiconductors	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		262144 words		3.3			16	SMALL OUTLINE, THIN PROFILE				.8 mm	105 Cel		256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V							18.41 mm
M24SR64-YMN6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
ST25DV16K-IER6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		16384 words		3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.4 mm
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V		e3	40	260			4.4 mm	400 ns
MR0A16ACYS35	Freescale Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS	165 mA	262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	85 Cel		256KX16	256K	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260		.028 Amp	18.41 mm	35 ns
FM33256B-G	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
MR25H10CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS	27 mA	131072 words		3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified	1048576 bit	2.7 V		e3	30	260		.000115 Amp	6 mm
DS2411P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e0				.000001 Amp	3.94 mm
DS2411P+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND		ASYNCHRONOUS	.1 mA	64 words				2/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm		3.76 mm	Not Qualified	64 bit	1.5 V		e3	30	260		.000001 Amp	3.94 mm
MR25H256ACDF	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V							6 mm
ST25DV04K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
47L16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
ST25DV04K-IER6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD		SYNCHRONOUS		4096 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-N8		5.5 V	.6 mm		2 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
FM33256B-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words			EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
EPCQ32ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words		3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	100 MHz	3.9 mm		33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm
CY8C20110-LDX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD		SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	QUAD		S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260			3 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		8192 words		3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		65536 bit	2.7 V							4.9 mm	550 ns
FM31256-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE	SOP14,.25			1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN	DUAL		R-PDSO-G14	3	5.5 V	1.727 mm		3.8985 mm		262144 bit	2.7 V	0.9ms TAA available @400khz and 3ms TAA available @ 100 khz	e3					8.6483 mm	550 ns
DS2502X1+U	Analog Devices	OTP ROM	INDUSTRIAL	4			PLASTIC/EPOXY	YES							128 words	COMMON			3/5	8		BGA4,2X2,37/16	Other Memory ICs			85 Cel		128X8	128	-40 Cel	TIN SILVER COPPER NICKEL				1					Not Qualified	1024 bit			e2	30	260				15000 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.