INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M36W832B100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		131072 words	3.3			8	FLATPACK			.65 mm	85 Cel	128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-PQFP-G52	3.6 V	2.35 mm		10 mm	Not Qualified	1048576 bit	3 V		e4				10 mm
M39432-15VNC6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		20 mA		3.3	EEPROM+FLASH	3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	85 Cel			-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40					Not Qualified				e0			.000002 Amp		150 ns
M36W108T100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M36DR432BD10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
M36DR432B120ZA6CT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			FLASH+SRAM	1.8/2		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66					Not Qualified				e0					120 ns
HCF40208BF	STMicroelectronics		INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE						3/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel			-40 Cel		DUAL	R-XDIP-T24					Not Qualified
M36DR432AD10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
M36W108AB120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36WT864BF85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	3 V		e3				19.1262 mm
Z8038AC6V	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	250 mA	128 words	5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	85 Cel	128X8	128	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	5.25 V	4.7 mm	6 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0				16.5862 mm
M36DR232B100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36DR432BD12ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	120 ns
M36WT864TF70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	70 ns
M36W432TG70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	70 ns
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J52	3.6 V	4.57 mm		19.1262 mm	Not Qualified	2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3				19.1262 mm
M36WT864BF10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96	2.2 V	1.4 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANIZED AS 512K X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00002 Amp	14 mm	100 ns
M36W216TI85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	85 ns
ST25TA02KD-C6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER	O-XUUC-N						2048 bit
ST25DV16K-JFR6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-G8	5.5 V	1.2 mm		3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
ST25TA02KD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8		.6 mm		2 mm		2048 bit				NOT SPECIFIED	NOT SPECIFIED		3 mm
M24SR04-YMF6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		512 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	512X8	512	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.8 mm		2 mm		4096 bit	2.7 V						3 mm
ST25DV64K-JFR6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.6 mm		2 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25TA02KKP-C6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				8	UNCASED CHIP				85 Cel	256KX8	256K	-40 Cel		UPPER	O-XUUC-N						2097152 bit
ST25TA02K-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER	O-XUUC-N						2048 bit
ST25DV16K-JFR6C3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.6 mm		2 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M24SR16-YMC7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	2KX8	2K	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.6 mm		2 mm		16384 bit	2.7 V						3 mm
ST25TB02K-AC6U6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD			2048 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	2KX1	2K	-40 Cel		UNSPECIFIED	O-XUUC-N						2048 bit
ST25TA02KKD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8		.6 mm		2 mm		2048 bit							3 mm
ST25TA16KAB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	O-XUUC-N						65536 bit
M24SR64-YSB12I6/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		8192 words	3.3			8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	X-XUUC-N	5.5 V					65536 bit	2.7 V
ST25TA64K-AB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	O-XUUC-N						65536 bit
M24SR04-YMC6/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.6 mm		2 mm		4096 bit	2.7 V						3 mm
ST25DV04K-IER6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	UNCASED CHIP				85 Cel	4KX1	4K	-40 Cel		UPPER	X-XUUC-N	5.5 V					4096 bit	1.8 V
ST25DV64K-JFR6T3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	64KX1	64K	-40 Cel		DUAL	R-PDSO-G8	5.5 V	1.2 mm		3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
ST25DV04K-JFR6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE			1.27 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	R-PDSO-G8	5.5 V	1.75 mm		3.9 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR02-YSB12I/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		256 words	3.3			8	UNCASED CHIP				85 Cel	256X8	256	-40 Cel		UPPER	X-XUUC-N	5.5 V					2048 bit	2.7 V
ST25DV04K-JFR6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	UNCASED CHIP				85 Cel	4KX1	4K	-40 Cel		UPPER	X-XUUC-N	5.5 V					4096 bit	1.8 V
ST25TB512-AC6B6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		16 words				32	UNCASED CHIP				85 Cel	16X32	16	-40 Cel		UPPER	X-XUUC-N						512 bit
M24SR02-YDW7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		256 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-G8	5.5 V	1.2 mm		3 mm		2048 bit	2.7 V						4.4 mm
ST25TA02KKD-C6H5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	5	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	ASYNCHRONOUS		256 words				8	CHIP CARRIER			.4 mm	85 Cel	256X8	256	-40 Cel		BOTTOM	R-XBCC-B5	5.5 V	.6 mm		1.4 mm		2048 bit	1.65 V						1.7 mm
ST25TA02KKP-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256KX8	256K	-40 Cel		DUAL	R-PDSO-N8		.6 mm		2 mm		2097152 bit							3 mm
ST25TB02K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD			2048 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	2KX1	2K	-40 Cel		UNSPECIFIED	O-XUUC-N						2048 bit
ST25DV04K-IER6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	4KX1	4K	-40 Cel		DUAL	S-PDSO-N12	5.5 V	.6 mm		3 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25TB512-AT6U6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD			512 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	512X1	512	-40 Cel		UNSPECIFIED	O-XUUC-N						512 bit
M24SR02-YMF7T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		256 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	256X8	256	-40 Cel		DUAL	R-PDSO-N8	5.5 V	.8 mm		2 mm		2048 bit	2.7 V						3 mm
ST25TA16K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8192 words				8	UNCASED CHIP				85 Cel	8KX8	8K	-40 Cel		UPPER	X-XUUC-N						65536 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.