INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
S70KS1281DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S72XS128RD0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	134217728 bit	1.7 V				8 mm
S71KL256SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	268435456 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S71KS512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S71KS512SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S72VS256RE0AHBHH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	268435456 bit	1.7 V				8 mm
S72XS128RD0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	8MX16	8M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	134217728 bit	1.7 V				8 mm
S70KS1281DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KL1281DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S71KL512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S70KS1281DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm	134217728 bit	1.7 V				8 mm
S70KS1281DPBHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S71KS512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S70KL1281DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	3	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KS1281DGBHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KS1281DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KS1281DGBHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S70KS1281DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S72VS256RE0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	268435456 bit	1.7 V				8 mm
S70KS1281DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
S71KS512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm	536870912 bit		HYPER RAM IS ORGANISED AS 8MX8			8 mm
S70KS1281DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm	134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
CY15B128Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	16384 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm	131072 bit	2 V			260	4.889 mm
CY15B016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15E004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15E064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15B004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	3	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	4096 bit	2.7 V			260	4.889 mm
CY15B016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15E016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15B016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm
CY15B004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	3	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	4096 bit	2.7 V			260	4.889 mm
CY15B064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15E004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15E064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15E016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B256Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	32768 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm	262144 bit	2 V			260	4.889 mm
CY15E016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15E004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15B128Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	16384 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm	131072 bit	2 V			260	4.889 mm
CY15E064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15E064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	65536 bit	4.5 V			260	4.889 mm
CY15E016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	16384 bit	4.5 V			260	4.889 mm
CY15B004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	4096 bit	2.7 V			260	4.889 mm
CY15E004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm	4096 bit	4.5 V			260	4.889 mm
CY15B064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm	65536 bit	2.7 V			260	4.889 mm
CY15B016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	3.3	8	SMALL OUTLINE	1.27 mm	85 Cel	2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm	16384 bit	2.7 V			260	4.889 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.