INDUSTRIAL Other Function Memory ICs 1,153

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words			1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	33554432 bit	1.71 V		e0			NOR TYPE		35 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words		COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95008X1	95008		-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95008 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	559232 words		COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	559232X1	559232		-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	559232 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words		COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	178144X1	178144		-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	178144 bit	4.5 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		559232 words			3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		559232X1	559232		-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	559232 bit	3 V		e3	30	260			12.8 mm
XC1736-PD8C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			10 mA	36288 words		COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	36288X1	36288		-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1				2.5 MHz		Not Qualified				e0	30	225		.0005 Amp			21
XC17S20VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		178144 words			5			1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		178144X1	178144		-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	178144 bit	4.5 V		e3	30	260			4.9 mm
XC17S30VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	247968 words		COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	247968X1	247968		-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	247968 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XC17S05PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		53984 words			5			1	IN-LINE				2.54 mm	85 Cel		53984X1	53984		-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	53984 bit	4.5 V		e3	30	250			9.3599 mm
TH50VSF2583AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0					12 mm	70 ns
TC518512FI-100	Toshiba		INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			50 mA	524288 words	YES	COMMON	5		5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs		1.27 mm	85 Cel	3-STATE	512KX8	512K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32							Not Qualified	4194304 bit			e0				.0002 Amp		100 ns
TH50VSF2581AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0					12 mm	90 ns
TH50VSF2582AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0					12 mm	70 ns
TC74HC670AF(EL,F)	Toshiba		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING									2/6		SMALL OUTLINE	SOP16,.3	Other Memory ICs		1.27 mm	85 Cel					-40 Cel		DUAL	R-PDSO-G16							Not Qualified
TC518129AFWI-10	Toshiba		INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			60 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs		1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32							Not Qualified	1048576 bit			e0				.0002 Amp		100 ns
TC74HC670AF(F)	Toshiba		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING									2/6		SMALL OUTLINE	SOP16,.3	Other Memory ICs		1.27 mm	85 Cel					-40 Cel		DUAL	R-PDSO-G16							Not Qualified
JT6N57	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	5	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		32768 words						1	UNCASED CHIP					85 Cel		32KX1	32K		-40 Cel	TIN LEAD	UPPER	R-XUUC-N5		5.5 V					Not Qualified	32768 bit	2.7 V		e0
TC74HC670AP(F)	Toshiba		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE									2/6		IN-LINE	DIP16,.3	Other Memory ICs		2.54 mm	85 Cel					-40 Cel		DUAL	R-PDIP-T16							Not Qualified
TH50VSF2580AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0					12 mm	90 ns
TC74HC670P	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		ASYNCHRONOUS		4 words						4	IN-LINE				2.54 mm	85 Cel		4X4	4		-40 Cel	TIN LEAD	DUAL	R-PDIP-T16		6 V	5 mm			7.62 mm	Not Qualified	16 bit	2 V		e0					19.304 mm
THGBMHG9C8LBAU8	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				68719476736 words						8	GRID ARRAY					105 Cel		64GX8	64G		-40 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
THGBMHG7C2LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		17179869184 words						8	GRID ARRAY					85 Cel		16GX8	16G		-40 Cel		BOTTOM	R-PBGA-B153								137438953472 bit
THGBMHG8C4LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		34359738368 words						8	GRID ARRAY					85 Cel		32GX8	32G		-40 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG6C1LBAWL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		8589934592 words						8	GRID ARRAY					85 Cel		8GX8	8G		-40 Cel		BOTTOM	R-PBGA-B153								68719476736 bit
THGBMHG6C1LBAAL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		8589934592 words						8	GRID ARRAY					85 Cel		8GX8	8G		-40 Cel		BOTTOM	R-PBGA-B								68719476736 bit
THGBMHG6C1LBAU6	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				8589934592 words						8	GRID ARRAY					105 Cel		8GX8	8G		-40 Cel		BOTTOM	R-PBGA-B153								68719476736 bit
THGBMHG9C8LBAAG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		68719476736 words						8	GRID ARRAY					85 Cel		64GX8	64G		-40 Cel		BOTTOM	R-PBGA-B								549755813888 bit
THGBMHG8C4LBAAR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		34359738368 words						8	GRID ARRAY					85 Cel		32GX8	32G		-40 Cel		BOTTOM	R-PBGA-B								274877906944 bit
THGBMHG8C4LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				34359738368 words						8	GRID ARRAY					105 Cel		32GX8	32G		-40 Cel		BOTTOM	R-PBGA-B153								274877906944 bit
THGBMHG7C2LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				17179869184 words						8	GRID ARRAY					105 Cel		16GX8	16G		-40 Cel		BOTTOM	R-PBGA-B153								137438953472 bit
THGBMHG7C2LBAAR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS		17179869184 words						8	GRID ARRAY					85 Cel		16GX8	16G		-40 Cel		BOTTOM	R-PBGA-B								137438953472 bit
THGBMHG9C8LBAWG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		68719476736 words						8	GRID ARRAY					85 Cel		64GX8	64G		-40 Cel		BOTTOM	R-PBGA-B153								549755813888 bit
CD40208BE98	Renesas Electronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE											IN-LINE	DIP24,.6	Other Memory ICs		2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24							Not Qualified				e0
TSE2004GB2C0NCG	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		512 words			3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		512X8	512		-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-N8		3.6 V	.8 mm			2 mm		4096 bit	2.2 V		e3	30	260			3 mm
HD74HC670RP-ER	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		4 words			4.5			4	SMALL OUTLINE				1.27 mm	85 Cel		4X4	4		-40 Cel		DUAL	R-PDSO-G16		6 V	1.75 mm			3.9 mm	Not Qualified	16 bit	2 V							9.9 mm
HD74HC670FP-ER	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		4 words			4.5			4	SMALL OUTLINE				1.27 mm	85 Cel		4X4	4		-40 Cel		DUAL	R-PDSO-G16		6 V	2.2 mm			5.5 mm	Not Qualified	16 bit	2 V							10.06 mm
CD40208BEX98	Renesas Electronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE											IN-LINE	DIP24,.6	Other Memory ICs		2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24											e0
HD74HC670T	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		4 words			4.5			4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4X4	4		-40 Cel		DUAL	R-PDSO-G16		6 V	1.1 mm			4.4 mm	Not Qualified	16 bit	2 V							5.2 mm
74FCT162701ATPV	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			5 mA				5		5		SMALL OUTLINE, SHRINK PITCH	SSOP56,.4	Other Memory ICs		.635 mm	85 Cel					-40 Cel	TIN LEAD	DUAL	R-PDSO-G56	1						Not Qualified				e0	20	225
CD40108BE98	Renesas Electronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE									5/15		IN-LINE	DIP24,.6	Other Memory ICs		2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24							Not Qualified				e0
K5A3340YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm			8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM						11 mm
K1B3216BDD-FI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL			35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs		.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54							Not Qualified	33554432 bit							.0001 Amp		70 ns
K5A3340YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm			8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM					.00001 Amp	11 mm	70 ns
K1S32161CE-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL			35 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs		.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	3						Not Qualified	33554432 bit					240		.0001 Amp		70 ns
K5A3340YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL			77 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs		.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69							Not Qualified								.00001 Amp		80 ns
K5C6481NTM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm			10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM						10.8 mm
K1S6416BCD-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL			40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs		.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48							Not Qualified	67108864 bit							.00012 Amp		70 ns
K1B3216BDD-BI700	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL			35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs		.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54							Not Qualified	33554432 bit							.0001 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.